scholarly journals Ultrafast electron transport in metallic antiferromagnetic Mn2Au thin films probed by terahertz spectroscopy

2020 ◽  
Vol 102 (1) ◽  
Author(s):  
Zuanming Jin ◽  
Shunyi Ruan ◽  
Xiaofeng Zhou ◽  
Bangju Song ◽  
Cheng Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Transport ◽  
Terahertz Spectroscopy

Complex conductivity of Y1−xPrxBa2Cu3O7 thin films measured by coherent terahertz spectroscopy

1994 ◽  
Vol 235-240 ◽  
pp. 2025-2026 ◽  
Author(s):  
J.O. White ◽  
R. Buhleier ◽  
S.D. Brorson ◽  
I.E. Trofimov ◽  
H.-U. Habermeier ◽  
...  
Keyword(s):  
Thin Films ◽  
Terahertz Spectroscopy ◽  
Complex Conductivity

Comparative Study of Photocarrier Dynamics in CVD-deposited CuWO4, CuO, and WO3 Thin Films for Photoelectrocatalysis

2020 ◽  
Vol 234 (4) ◽  
pp. 699-717
Author(s):  
James Hirst ◽  
Sönke Müller ◽  
Daniel Peeters ◽  
Alexander Sadlo ◽  
Lukas Mai ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Terahertz Spectroscopy ◽  
Chemical Vapor ◽  
Photoelectrochemical Cells ◽  
Time Resolved ◽  
And Diffusion ◽  
Wo3 Thin Films ◽  
Carrier Transport Properties

AbstractThe temporal evolution of photogenerated carriers in CuWO4, CuO and WO3 thin films deposited via a direct chemical vapor deposition approach was studied using time-resolved microwave conductivity and terahertz spectroscopy to obtain the photocarrier lifetime, mobility and diffusion length. The carrier transport properties of the films prepared by varying the copper-to-tungsten stoichiometry were compared and the results related to the performance of the compositions built into respective photoelectrochemical cells. Superior carrier mobility was observed for CuWO4 under frontside illumination.

scholarly journals Correction: G. Papari et al. Terahertz Spectroscopy of Amorphous WSe2 and MoSe2 Thin Films. Materials 2018, 11, 1613

Materials ◽  
2020 ◽  
Vol 13 (4) ◽  
pp. 1017
Author(s):  
Gian Paolo Papari ◽  
Can Koral ◽  
Toby Hallam ◽  
Georg Stefan Duesberg ◽  
Antonello Andreone
Keyword(s):  
Thin Films ◽  
Terahertz Spectroscopy ◽  
Transmission Function ◽  
Exponential Factor ◽  
Correct Expression

The exponential factor in Equation (1) of the paper published in Materials [1] reports a misprint and the correct expression of the transmission function is (1) T ˜ ( ω ) = E ˜ f ( ω ) E ˜ s ( ω ) = 2 n ˜ f ( n ˜ a + n ˜ s ) ( n ˜ f + n ˜ a ) ( n ˜ f + n ˜ s ) e x p { −   i   ( n ˜ f − n ˜ a ) ω t c } F P ( ω ) where F P ( ω ) = 1 1 − ( n ˜ f − n ˜ a n ˜ f + n ˜ a ) ( n ˜ f − n ˜ s n ˜ f + n ˜ s ) e x p { − i   2   n ˜ f ω t c } [...]

Imaging Electron Transport across Grain Boundaries in an Integrated Electron and Atomic Force Microscopy Platform: Application to Polycrystalline Silicon Solar Cells

2009 ◽  
Vol 1153 ◽  
Author(s):  
Manuel J Romero ◽  
Fude Liu ◽  
Oliver Kunz ◽  
Johnson Wong ◽  
Chun-Sheng Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Solar Cells ◽  
Electron Transport ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
High Energy ◽  
Dominant Factor ◽  
Force Microscopy ◽  
Atomic Force

AbstractWe have investigated the local electron transport in polycrystalline silicon (pc-Si) thin-films by atomic force microscopy (AFM)-based measurements of the electron-beam-induced current (EBIC). EVA solar cells are produced at UNSW by <i>EVAporation</i> of a-Si and subsequent <i>solid-phase crystallization</i>–a potentially cost-effective approach to the production of pc-Si photovoltaics. A fundamental understanding of the electron transport in these pc-Si thin films is of prime importance to address the factors limiting the efficiency of EVA solar cells. EBIC measurements performed in combination with an AFM integrated inside an electron microscope can resolve the electron transport across individual grain boundaries. AFM-EBIC reveals that most grain boundaries present a high energy barrier to the transport of electrons for both p-type and n-type EVA thin-films. Furthermore, for p-type EVA pc-Si, in contrast with n-type, charged grain boundaries are seen. Recombination at grain boundaries seems to be the dominant factor limiting the efficiency of these pc-Si solar cells.

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