scholarly journals Work function, deformation potential, and collapse of Landau levels in strained graphene and silicene

2020 ◽  
Vol 101 (24) ◽  
Author(s):  
D. Grassano ◽  
M. D'Alessandro ◽  
O. Pulci ◽  
S. G. Sharapov ◽  
V. P. Gusynin ◽  
...  
Keyword(s):  
Work Function ◽  
Landau Levels ◽  
Deformation Potential ◽  
Strained Graphene

scholarly journals Dispersive Landau levels and valley currents in strained graphene nanoribbons

2020 ◽  
Vol 101 (8) ◽  
Author(s):  
Étienne Lantagne-Hurtubise ◽  
Xiao-Xiao Zhang ◽  
Marcel Franz
Keyword(s):  
Graphene Nanoribbons ◽  
Landau Levels ◽  
Strained Graphene

scholarly journals Investigation of Magneto-phonon Resonance in Graphene Monolayers

2017 ◽  
Vol 33 (4) ◽  
Author(s):  
Bui Dinh Hoi
Keyword(s):  
Magnetic Field ◽  
Linear Response ◽  
Resonant Scattering ◽  
Linear Response Theory ◽  
Landau Levels ◽  
Effect Of Temperature ◽  
Perpendicular Magnetic Field ◽  
Dirac Fermions ◽  
Deformation Potential ◽  
The Magnetic Field

In this work, utilising the linear response theory we calculate the magneto conductivity (MC) in graphene monolayers, subjected to a static perpendicular magnetic field. The interaction of Dirac fermions with optical phonon via deformation potential is taken into account at high temperature. The dependence of the MC on the magnetic field shows resonant peaks that describe transitions of electrons between Landau levels via the resonant scattering with optical phonons. The effect of temperature on the MC is also obtained and discussed.

scholarly journals Landau levels in uniaxially strained graphene: A geometrical approach

2015 ◽  
Vol 359 ◽  
pp. 243-251 ◽  
Author(s):  
Y. Betancur-Ocampo ◽  
M.E. Cifuentes-Quintal ◽  
G. Cordourier-Maruri ◽  
R. de Coss
Keyword(s):  
Landau Levels ◽  
Geometrical Approach ◽  
Strained Graphene

scholarly journals Observation of unconventional splitting of Landau levels in strained graphene

2015 ◽  
Vol 92 (24) ◽  
Author(s):  
Si-Yu Li ◽  
Ke-Ke Bai ◽  
Long-Jing Yin ◽  
Jia-Bin Qiao ◽  
Wen-Xiao Wang ◽  
...  
Keyword(s):  
Landau Levels ◽  
Strained Graphene

scholarly journals Transport Signatures of Pseudomagnetic Landau Levels in Strained Graphene Ribbons

2013 ◽  
Vol 110 (26) ◽  
Author(s):  
Diana A. Gradinar ◽  
Marcin Mucha-Kruczyński ◽  
Henning Schomerus ◽  
Vladimir I. Fal’ko
Keyword(s):  
Landau Levels ◽  
Strained Graphene

Positron work function and deformation potential

1987 ◽  
Vol 36 (10) ◽  
pp. 5089-5092 ◽  
Author(s):  
Mani Farjam ◽  
Herbert B. Shore
Keyword(s):  
Work Function ◽  
Deformation Potential

Surface reactions observed by photoemission electron microscopy (PEEM)

1992 ◽  
Vol 50 (1) ◽  
pp. 286-287
Author(s):  
H.H. Rotermund
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
Work Function ◽  
Chemical Reactions ◽  
Reaction Diffusion ◽  
Dynamic Processes ◽  
Clean Surface ◽  
Crystal Surfaces ◽  
Single Crystal Surfaces ◽  
Photoemission Electron

Chemical reactions at a surface will in most cases show a measurable influence on the work function of the clean surface. This change of the work function δφ can be used to image the local distributions of the investigated reaction,.if one of the reacting partners is adsorbed at the surface in form of islands of sufficient size (Δ>0.2μm). These can than be visualized via a photoemission electron microscope (PEEM). Changes of φ as low as 2 meV give already a change in the total intensity of a PEEM picture. To achieve reasonable contrast for an image several 10 meV of δφ are needed. Dynamic processes as surface diffusion of CO or O on single crystal surfaces as well as reaction / diffusion fronts have been observed in real time and space.

Epitaxial ferroelectric thin films

1994 ◽  
Vol 52 ◽  
pp. 572-573
Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Nonvolatile Memory ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Memory Devices ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Electro Optic ◽  
Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

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