Tuning the magnetic state in a phase-separated magnetic oxide thin film by means of electric field and temperature

2020 ◽  
Vol 101 (17) ◽  
Author(s):  
O. G. Udalov ◽  
I. S. Beloborodov
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Magnetic State ◽  
Oxide Thin Film ◽  
Magnetic Oxide

Control of the electroresistance effect obtained in Pr0.5Ca0.5MnO3 magnetic oxide thin film by electrostatic field in a ferroelectric/manganite optimized device

2012 ◽  
Author(s):  
Ritha Soulimane ◽  
Anne-Marie Haghiri ◽  
Wilfrid Prellier ◽  
Gilles Poullain ◽  
Rachid Bouregba ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrostatic Field ◽  
Oxide Thin Film ◽  
Magnetic Oxide

scholarly journals Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Heesoo Lee ◽  
Ki Soo Chang ◽  
Young Jun Tak ◽  
Tae Soo Jung ◽  
Jeong Woo Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Electric Field ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Selective Activation ◽  
Indium Gallium

scholarly journals Investigation of the Electrical Characteristics of Bilayer ZnO/In2O3 Thin-Film Transistors Fabricated by Solution Processing

Materials ◽  
2018 ◽  
Vol 11 (11) ◽  
pp. 2103 ◽  
Author(s):  
Hyeonju Lee ◽  
Xue Zhang ◽  
Jung Kim ◽  
Eui-Jik Kim ◽  
Jaehoon Park
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Electric Field ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Internal Electric Field ◽  
Bilayer Structure ◽  
Gate Bias ◽  
X Ray

Metal-oxide thin-film transistors (TFTs) have been developed as promising candidates for use in various electronic and optoelectronic applications. In this study, we fabricated bilayer zinc oxide (ZnO)/indium oxide (In2O3) TFTs by using the sol-gel solution process, and investigated the structural and chemical properties of the bilayer ZnO/In2O3 semiconductor and the electrical properties of these transistors. The thermogravimetric analysis results showed that ZnO and In2O3 films can be produced by the thermal annealing process at 350 °C. The grazing incidence X-ray diffraction patterns and X-ray photoemission spectroscopy results revealed that the intensity and position of characteristic peaks related to In2O3 in the bilayer structure were not affected by the underlying ZnO film. On the other hand, the electrical properties, such as drain current, threshold voltage, and field-effect mobility of the bilayer ZnO/In2O3 TFTs obviously improved, compared with those of the single-layer In2O3 TFTs. Considering the energy bands of ZnO and In2O3, the enhancement in the TFT performance is explained through the electron transport between ZnO and In2O3 and the formation of an internal electric field in the bilayer structure. In the negative gate-bias stress experiments, it was found that the internal electric field contributes to the electrical stability of the bilayer ZnO/In2O3 TFT by reducing the negative gate-bias-induced field and suppressing the trapping of holes in the TFT channel. Consequently, we suggest that the bilayer structure of solution-processed metal-oxide semiconductors is a viable means of enhancing the TFT performance.

Hexagon Platinum Schottky Contact with ZnO Thin Film for Hydrogen Sensing

2013 ◽  
Vol 64 (3) ◽  
Author(s):  
Mas Elyza Mohd Azol ◽  
Nafarizal Nayan ◽  
Uda Hashim ◽  
Muhammad Kashif ◽  
Mahnaz Shafiei ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Schottky Contact ◽  
Hydrogen Sensor ◽  
Contact Layer ◽  
Hydrogen Gas ◽  
Oxide Thin Film ◽  
M Current ◽  
Hydrogen Sensing ◽  
Sharp Edges

This paper reports on the study of the effect on adding total peripheries and sharp edges to the Schottky contact as a hydrogen sensor. Schottky contact was successfully designed and fabricated as hexagon-shape. The contact was integrated together with zinc oxide thin film and tested towards 1% hydrogen gas. Simulations of the design were conducted using COMSOL Multiphysics to observe the electric field characteristic at the contact layer. The simulation results show higher electric field induced at sharp edges with 4.18×104 V/m. Current-voltage characteristic shows 0.27 V voltage shift at 40 µA biased current.

scholarly journals Electric field modulation of thermopower for transparent amorphous oxide thin film transistors

2010 ◽  
Vol 97 (18) ◽  
pp. 182105 ◽  
Author(s):  
Hirotaka Koide ◽  
Yuki Nagao ◽  
Kunihito Koumoto ◽  
Yuka Takasaki ◽  
Tomonari Umemura ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Amorphous Oxide ◽  
Field Modulation

High Sensitivity pH Sensors based on Amorphous Indium-gallium-zinc Oxide Thin-film Transistors

2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Sensitivity ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Ph Sensors ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Fabrication of layer-by-layer graphene oxide thin film on copper substrate by electrophoretic deposition

2020 ◽  
Vol 59 (12) ◽  
pp. 125001
Author(s):  
Nan Ye ◽  
Satoka Ohnishi ◽  
Mitsuhiro Okada ◽  
Kazuto Hatakeyama ◽  
Kazuhiko Seki ◽  
...  
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Electrophoretic Deposition ◽  
Copper Substrate ◽  
Oxide Thin Film ◽  
Layer By Layer ◽  
Layer Graphene
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