Doping-induced topological phase transition in Bi: The role of quantum electronic stress

2020 ◽  
Vol 101 (3) ◽  
Author(s):  
Kyung-Hwan Jin ◽  
Han Woong Yeom ◽  
Feng Liu
2019 ◽  
Vol 5 (8) ◽  
pp. eaav9771 ◽  
Author(s):  
Joshua Mutch ◽  
Wei-Chih Chen ◽  
Preston Went ◽  
Tiema Qian ◽  
Ilham Zaky Wilson ◽  
...  

A phase transition between topologically distinct insulating phases involves closing and reopening the bandgap. Near the topological phase transition, the bulk energy spectrum is characterized by a massive Dirac dispersion, where the bandgap plays the role of mass. We report measurements of strain dependence of electrical transport properties of ZrTe5, which is known to host massive Dirac fermions in the bulk due to its proximity to a topological phase transition. We observe that the resistivity exhibits a pronounced minimum at a critical strain. We further find that the positive longitudinal magnetoconductance becomes maximal at the critical strain. This nonmonotonic strain dependence is consistent with the switching of sign of the Dirac mass and, hence, a strain-tuned topological phase transition in ZrTe5.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Milad Jangjan ◽  
Mir Vahid Hosseini

AbstractWe theoretically report the finding of a new kind of topological phase transition between a normal insulator and a topological metal state where the closing-reopening of bandgap is accompanied by passing the Fermi level through an additional band. The resulting nontrivial topological metal phase is characterized by stable zero-energy localized edge states that exist within the full gapless bulk states. Such states living on a quasi-one-dimensional system with three sublattices per unit cell are protected by hidden inversion symmetry. While other required symmetries such as chiral, particle-hole, or full inversion symmetry are absent in the system.


2021 ◽  
Vol 126 (1) ◽  
Author(s):  
Niraj Aryal ◽  
Xilian Jin ◽  
Q. Li ◽  
A. M. Tsvelik ◽  
Weiguo Yin

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