scholarly journals Magnetocrystalline anisotropy of Fe, Co, and Ni slabs from density functional theory and tight-binding models

2019 ◽  
Vol 100 (17) ◽  
Author(s):  
L. Le Laurent ◽  
C. Barreteau ◽  
T. Markussen
1989 ◽  
Vol 39 (17) ◽  
pp. 12520-12536 ◽  
Author(s):  
W. Matthew C. Foulkes ◽  
Roger Haydock

1995 ◽  
Vol 383 ◽  
Author(s):  
G. Jungnickel ◽  
D. Porezag ◽  
Th. Frauenheim ◽  
W. R. L. Lambrecht ◽  
B. Segall ◽  
...  

ABSTRACTThe reconstruction of the diamond {1111} surface is re-examined by means of density functional theory based tight-binding molecular dynamics. Evidence is found for competition between a graphitizing tendency leading to an unreconstructed but relaxed 1 × 1 surface and a π-bonded chain-like 2 × 1 reconstruction. The implications of the possible co-existence of these two distinct surface phases for diamond growth are discussed.


2020 ◽  
Author(s):  
Hugo Souza ◽  
Antonio Chaves Neto ◽  
Francisco Sousa ◽  
Rodrigo Amorim ◽  
Alexandre Reily Rocha ◽  
...  

In this work, we investigate the effects of building block separation of Phenylalanine-Tryptophan nanotube induced by the confined water molecules on the electronic properties using density-functional theory based tight-binding method. <div><br></div>


2014 ◽  
Vol 16 (28) ◽  
pp. 14368-14377 ◽  
Author(s):  
Qiang Cui ◽  
Marcus Elstner

Semi-empirical (SE) methods are derived from Hartree–Fock (HF) or Density Functional Theory (DFT) by neglect and approximation of electronic integrals.


1996 ◽  
Vol 423 ◽  
Author(s):  
J. Elsner ◽  
M. Haugk ◽  
Th. Frauenheim

AbstractA density-functional theory based nonorthogonal tight-binding scheme is used to investigate the nonpolar surfaces of GaN in the wurtzite and zinc-blende phases. In III-V semiconductors the nonpolar surfaces mainly reconstruct by a bond-length conserving rotation of the surface atoms. In contrast to that for all nonpolar GaN surfaces this bond-length is shortened by ≈3 − 4%. We furthermore find the rotation angle to be significantly smaller than could be expected from results for GaAs and GaP.


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