Many-body corrected tight-binding Hamiltonians for an accurate quasiparticle description of topological insulators of the Bi2Se3 family

2019 ◽  
Vol 100 (15) ◽  
Author(s):  
Irene Aguilera ◽  
Christoph Friedrich ◽  
Stefan Blügel
Keyword(s):  
Topological Insulators ◽  
Tight Binding ◽  
Many Body

Many-Body Effects in the Electronic Structure of Topological Insulators

2015 ◽  
pp. 161-189
Author(s):  
Irene Aguilera ◽  
Ilya A. Nechaev ◽  
Christoph Friedrich ◽  
Stefan Blügel ◽  
Evgueni V. Chulkov
Keyword(s):  
Electronic Structure ◽  
Topological Insulators ◽  
Many Body ◽  
Many Body Effects

scholarly journals Tight-binding model for the band dispersion in rhombohedral topological insulators over the whole Brillouin zone

2018 ◽  
Vol 98 (3) ◽  
Author(s):  
Carlos Mera Acosta ◽  
Matheus P. Lima ◽  
Antônio J. R. da Silva ◽  
A. Fazzio ◽  
C. H. Lewenkopf
Keyword(s):  
Brillouin Zone ◽  
Topological Insulators ◽  
Tight Binding ◽  
Tight Binding Model ◽  
Binding Model ◽  
Band Dispersion

Three-Body Correlation in the Diluted Generalized Hubbard Model

1997 ◽  
Vol 491 ◽  
Author(s):  
O. Navarro ◽  
M. Avignon
Keyword(s):  
Nearest Neighbor ◽  
Dimensional Space ◽  
Linear Chain ◽  
Tight Binding ◽  
Real Space ◽  
Many Body ◽  
Higher Dimensional ◽  
Generalized Hubbard Model ◽  
Three Body ◽  
Body Correlation

ABSTRACTA real-space method has been used to solve the generalized Hubbard Hamiltonian for a system with few electrons. The method is based on mapping the correlated many-body problem onto an equivalent tight-binding one in a higher dimensional space. For a linear chain, we have obtained an exact solution of the problem of three non-parallel electrons. The three-body correlation are studied by examining the binding energy in the ground state, for different values of the hopping parameters and of the on-site (U) and nearest-neighbor (V) interactions.

Topological Insulators: Electronic Structure, Material Systems and Applications

2017 ◽  
Vol 26 (03) ◽  
pp. 1740018
Author(s):  
Parijat Sengupta
Keyword(s):  
Quantum Wells ◽  
Topological Insulator ◽  
Topological Insulators ◽  
Tight Binding ◽  
Surface States ◽  
Internal Electric Field ◽  
Linear Dispersion ◽  
Band Theory ◽  
Magnetic Perturbations ◽  
Polarized Surface

Topological insulators are a new class of materials characterized by fully spin-polarized surface states, a linear dispersion, imperviousness to external non-magnetic perturbations, and a helical character arising out of the perpendicular spin-momentum locking. This article answers in a pedagogical way the distinction between a topological and normal insulator, the role of topology in band theory of solids, and the origin of these surface states. Numerical techniques including diagonalization of the TI Hamiltonians are described to quantitatively evaluate the behaviour of topological insulator states. The Hamiltonians based on continuum and tight binding approaches are contrasted. The application of TIs as components of a fast switching environment or channel material for transistors is examined through I-V curves. The potential pitfall of such devices is presented along with techniques that could potentially circumvent the problem. Additionally, it is demonstrated that a strong internal electric field can also induce topological insulator behaviour with wurtzite nitride quantum wells as representative materials.

Bond-Order Potentials for Molybdenum and Niobium: An Assessment of Their Quality

1998 ◽  
Vol 538 ◽  
Author(s):  
M. Mrovec ◽  
V. Vitek ◽  
D. Nguyen-Manh ◽  
D. G. Pettifor ◽  
L. G. Wang ◽  
...  
Keyword(s):  
Bond Order ◽  
Tight Binding ◽  
Direct Calculation ◽  
Real Space ◽  
Central Force ◽  
Full Potential ◽  
Extended Defects ◽  
Many Body ◽  
Deformation Path ◽  
Bond Order Potentials

AbstractThe bond-order potentials (BOP) have been constructed for Mo and Nb. These potentials are based on the real-space parametrized tight-binding method in which diagonalization of the Hamiltonian is avoided by direct calculation of the bond-order. In this scheme the energy consists of three parts: The bond part that comprises contributions of d electrons and introduces into the scheme the covalent character of bonding, the central-force many-body part that reflects the environmental dependence of sp overlap repulsion and a pair-wise contribution. The potentials were tested by calculation of energy differences between the bcc and several alternate structures and by investigating the trigonal deformation path. These calculations have been made in parallel using BOP and the full-potential linearized augmented plane-wave method. The central-force many-body Finnis-Sinclair type potentials have also been included into the study of the deformation path. This evaluation of BOP reveals that the potentials reproduce very closely the ab initio results and are, therefore, very suitable for atomistic studies of extended defects in the transition metals.

Optical spectra of nitride quantum-dot systems: From tight-binding states to many-body effects

2011 ◽  
Vol 248 (8) ◽  
pp. 1871-1878 ◽  
Author(s):  
J. Seebeck ◽  
M. Lorke ◽  
S. Schulz ◽  
K. Schuh ◽  
P. Gartner ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Tight Binding ◽  
Optical Spectra ◽  
Many Body ◽  
Many Body Effects
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