scholarly journals Spin-orbital entanglement in d8 Mott insulators: Possible excitonic magnetism in diamond lattice antiferromagnets

2019 ◽  
Vol 100 (4) ◽  
Author(s):  
Fei-Ye Li ◽  
Gang Chen
Keyword(s):  
Diamond Lattice ◽  
Mott Insulators ◽  
Spin Orbital

scholarly journals Fractionalized Fermionic Quantum Criticality in Spin-Orbital Mott Insulators

2020 ◽  
Vol 125 (25) ◽  
Author(s):  
Urban F. P. Seifert ◽  
Xiao-Yu Dong ◽  
Sreejith Chulliparambil ◽  
Matthias Vojta ◽  
Hong-Hao Tu ◽  
...  
Keyword(s):  
Quantum Criticality ◽  
Mott Insulators ◽  
Spin Orbital

scholarly journals Designing Quantum Spin-Orbital Liquids in Artificial Mott Insulators

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Xu Dou ◽  
Valeri N. Kotov ◽  
Bruno Uchoa
Keyword(s):  
Quantum Spin ◽  
Mott Insulators ◽  
Spin Orbital

Doped spin–orbital Mott insulators: Orbital dilution versus spin–orbital polarons

2022 ◽  
Vol 543 ◽  
pp. 168616
Author(s):  
Wojciech Brzezicki ◽  
Adolfo Avella ◽  
Mario Cuoco ◽  
Andrzej M. Oleś
Keyword(s):  
Mott Insulators ◽  
Spin Orbital

The dislocation structure of a 10° [110] tilt boundary in silicon

1983 ◽  
Vol 41 ◽  
pp. 114-115
Author(s):  
B. Cunningham ◽  
D.G. Ast
Keyword(s):  
Dislocation Structure ◽  
Tilt Angle ◽  
Imaging Technique ◽  
Diamond Lattice ◽  
Tilt Boundary ◽  
Formation Mechanisms ◽  
Diffraction Contrast ◽  
Lattice Fringe ◽  
Tilt Boundaries ◽  
Chemically Vapor Deposited

There have Been a number of studies of low-angle, θ < 4°, [10] tilt boundaries in the diamond lattice. Dislocations with Burgers vectors a/2<110>, a/2<112>, a<111> and a<001> have been reported in melt-grown bicrystals of germanium, and dislocations with Burgers vectors a<001> and a/2<112> have been reported in hot-pressed bicrystals of silicon. Most of the dislocations were found to be dissociated, the dissociation widths being dependent on the tilt angle. Possible dissociation schemes and formation mechanisms for the a<001> and a<111> dislocations from the interaction of lattice dislocations have recently been given.The present study reports on the dislocation structure of a 10° [10] tilt boundary in chemically vapor deposited silicon. The dislocations in the boundary were spaced about 1-3nm apart, making them difficult to resolve by conventional diffraction contrast techniques. The dislocation structure was therefore studied by the lattice-fringe imaging technique.

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