Optical Properties of Copper-Rich Cu-Ni-Zn Alloys with 20 at.% Zinc and up to 25 at.% Nickel at Room Temperature

1970 ◽  
Vol 1 (4) ◽  
pp. 1411-1414 ◽  
Author(s):  
Karl Mamola ◽  
Charles E. McCain ◽  
Klaus Schröder
Nanophotonics ◽  
2020 ◽  
Vol 9 (14) ◽  
pp. 4233-4252
Author(s):  
Yael Gutiérrez ◽  
Pablo García-Fernández ◽  
Javier Junquera ◽  
April S. Brown ◽  
Fernando Moreno ◽  
...  

AbstractReconfigurable plasmonics is driving an extensive quest for active materials that can support a controllable modulation of their optical properties for dynamically tunable plasmonic structures. Here, polymorphic gallium (Ga) is demonstrated to be a very promising candidate for adaptive plasmonics and reconfigurable photonics applications. The Ga sp-metal is widely known as a liquid metal at room temperature. In addition to the many other compelling attributes of nanostructured Ga, including minimal oxidation and biocompatibility, its six phases have varying degrees of metallic character, providing a wide gamut of electrical conductivity and optical behavior tunability. Here, the dielectric function of the several Ga phases is introduced and correlated with their respective electronic structures. The key conditions for optimal optical modulation and switching for each Ga phase are evaluated. Additionally, we provide a comparison of Ga with other more common phase-change materials, showing better performance of Ga at optical frequencies. Furthermore, we first report, to the best of our knowledge, the optical properties of liquid Ga in the terahertz (THz) range showing its broad plasmonic tunability from ultraviolet to visible-infrared and down to the THz regime. Finally, we provide both computational and experimental evidence of extension of Ga polymorphism to bidimensional two-dimensional (2D) gallenene, paving the way to new bidimensional reconfigurable plasmonic platforms.


2020 ◽  
Vol 281 ◽  
pp. 121028 ◽  
Author(s):  
Saad Mabrouk Yakout ◽  
Hanan A. Mousa ◽  
Hala T. Handal ◽  
Walid Sharmoukh

1990 ◽  
Vol 201 ◽  
Author(s):  
Honglie Shen ◽  
Genqing Yang ◽  
Zuyao Zhou ◽  
Guanqun Xia ◽  
Shichang Zou

AbstractDual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.


2000 ◽  
Vol 650 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  

ABSTRACTIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 oC occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.


DYNA ◽  
2016 ◽  
Vol 83 (195) ◽  
pp. 77-83 ◽  
Author(s):  
María José Quintana Hernández ◽  
José Ovidio García ◽  
Roberto González Ojeda ◽  
José Ignacio Verdeja

The use of Cu and Ti in Zn alloys improves mechanical properties as solid solution and dispersoid particles (grain refiners) may harden the material and reduce creep deformation. This is one of the main design problems for parts made with Zn alloys, even at room temperature. In this work the mechanical behavior of a Zn-Cu-Ti low alloy is presented using tensile tests at different strain rates, as well as creep tests at different loads to obtain the value of the strain rate coefficient m in samples parallel and perpendicular to the rolling direction of the Zn strip. The microstructure of the alloy in its raw state, as well as heat treated at 250°C, is also analyzed, as the banded structure produced by rolling influences the strengthening mechanisms that can be achieved through the treatment parameters.


2021 ◽  
Vol 21 (4) ◽  
pp. 2185-2195
Author(s):  
Jeferson Matos Hrenechen ◽  
Celso de Araujo Duarte ◽  
Ney Pereira Mattoso Filho ◽  
Evaldo Ribeiro

The present work describes the preparation and the investigation of the room temperature electrical and optical properties of a series of liquid nanocomposites (lnC) prepared with different concentrations of multiwalled carbon nanotubes (MWCNT) in a variety of liquid matrices: glycerin, Vaseline, glucose, propylene glycol and silicone oil (SIO). Special attention is deserved to the SIO matrix, owing to its convenient electrical properties for our purposes. We verified that a small percent fraction of MWCNT dispersed along the SIO matrix is capable of improving the electrical conductivity of the matrix by orders of magnitude, indicating that the MWCNT strongly participates in the electrical conduction mechanism. Also, the application of an external electric field to this lnC resulted in large changes in the optical transmittance, that were interpreted as a consequence of the fieldinduced MWCNT alignment into the liquid matrix. The characteristics of such a new category of nanocomposite in the liquid state suggest further studies.


2011 ◽  
Vol 58 (5(1)) ◽  
pp. 1316-1319
Author(s):  
Dong Jae Lee ◽  
Jin Won Park ◽  
Yun Kyung Seo ◽  
Yun Sang Lee

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