Origin of Improvement in Mechanical Quality Factor in Acceptor-Doped Relaxor-Based Ferroelectric Single Crystals

2018 ◽  
Vol 9 (6) ◽  
Author(s):  
Limei Zheng ◽  
Liya Yang ◽  
Yanran Li ◽  
Xiaoyan Lu ◽  
Da Huo ◽  
...  
Keyword(s):  
Single Crystals ◽  
Quality Factor ◽  
Mechanical Quality Factor ◽  
Mechanical Quality

A large and anisotropic enhancement of the mechanical quality factor in ternary relaxor-PbTiO3 single crystals

2021 ◽  
Vol 118 (18) ◽  
pp. 182902
Author(s):  
Yujia Jing ◽  
Limei Zheng ◽  
Fengying Liu ◽  
Xudong Qi ◽  
Guicheng Jiang ◽  
...  
Keyword(s):  
Single Crystals ◽  
Quality Factor ◽  
Mechanical Quality Factor ◽  
Mechanical Quality

Enhanced Mechanical Quality Factor of 32 Mode Mn Doped 71Pb(Mg1/3Nb2/3)O3–29PbZrTiO3 Piezoelectric Single Crystals

2020 ◽  
Vol 16 (2) ◽  
pp. 156-163 ◽  
Author(s):  
Atul Thakre ◽  
Ajeet Kumar ◽  
Dae-Yong Jeong ◽  
Geon-Tae Hwang ◽  
Woon-Ha Yoon ◽  
...  
Keyword(s):  
Single Crystals ◽  
Quality Factor ◽  
Mechanical Quality Factor ◽  
Mechanical Quality ◽  
Mn Doped

scholarly journals Mechanical Quality Factor of Pb(ZrxTi 1−x) 1−y (Mg1/3Nb2/3)yO3 Solid Solution Prepared by Wet-Dry Combination Method

1999 ◽  
Vol 67 (10) ◽  
pp. 985-987
Author(s):  
Yoshiyuki ABE ◽  
Taisyu YANAGISAWA ◽  
Kazuyuki KAKEGAWA ◽  
Yoshinori SASAKI
Keyword(s):  
Solid Solution ◽  
Quality Factor ◽  
Mechanical Quality Factor ◽  
Combination Method ◽  
Mechanical Quality

A Microcontroller Approach to Measuring Transmissibility of MEMS Devices

2015 ◽  
Vol 2015 (DPC) ◽  
pp. 001564-001593
Author(s):  
Chong Li ◽  
Yixuan Wu ◽  
Haoyue Yang ◽  
Luke L. Jenkins ◽  
Robert N. Dean ◽  
...  
Keyword(s):  
Resonant Frequency ◽  
Quality Factor ◽  
Real Time ◽  
High Speed ◽  
Mechanical Quality Factor ◽  
Quantization Noise ◽  
Mems Devices ◽  
Input And Output ◽  
Mechanical Quality ◽  
Mems Device

The transmissibility reveals two very useful characteristics of a micro-electro-mechanical systems (MEMS) device, the resonant frequency and the mechanical quality factor. Real time knowledge on these two important factors can enhance application performance or avoid potential problems from environmental disturbances due to fabrication tolerances and the resulting operational differences in otherwise identical devices. Expensive laboratory equipment is typically used to measure the transmissibility. However, these test systems are not readily adaptable to field use. Therefore, it is important to be able to measure the transmissibility using a real time technique with a simplified test setup. This study proposes a technique that can compute the transmissibility in real time using a low cost microcontroller. This technique utilizes two laser vibrometers to detect the input and output motions of the proof mass in a MEMS device, which are fed to high speed 500 KHz analog to digital converters (ADC) in the microcontroller. A filtering step is performed to decrease noise. After the sampling and pre-filtering, a Fast Fourier Transform (FFT) is performed to convert the time-domain signals to frequency domain signals. The amplitude of the output signal at each frequency is divided by the amplitude of the corresponding input signal at each frequency to obtain the transmissibility. To overcome the difficulties resulting from measurement and quantization noise, a recursive calculating algorithm and a de-quantization filter are introduced. The recursive calculating process guarantees that the system updates the results continually, which results in a transmissibility plot covering the entire bandwidth. The de-quantization filter considers the validity of the data and performs the transmissibility division step accordingly. A cantilevered structure was chosen as the device-under-test to verify and evaluate this technique. The cantilevered device was attached to an electromechanical shaker system for vibratory stimulation. Two laser vibrometers were used to detect the input and output motion and this data was fed into a microcontroller. The microcontroller was STM32F407, which is 32-bit and 168 MHz controller. The tests demonstrated that this technique can measure the transmissibility and therefore the resonant frequency and mechanical quality factor accurately compared to a professional signal analyzer.

Hardening behavior and highly enhanced mechanical quality factor in (K 0.5 Na 0.5 )NbO 3 –based ceramics

2017 ◽  
Vol 37 (5) ◽  
pp. 2083-2089 ◽  
Author(s):  
Hyoung-Su Han ◽  
Jurij Koruza ◽  
Eric A. Patterson ◽  
Jan Schultheiß ◽  
Emre Erdem ◽  
...  
Keyword(s):  
Quality Factor ◽  
Mechanical Quality Factor ◽  
Hardening Behavior ◽  
Mechanical Quality

scholarly journals Mechanical quality factor of a sapphire fiber at cryogenic temperatures

2000 ◽  
Vol 273 (5-6) ◽  
pp. 310-315 ◽  
Author(s):  
T Uchiyama ◽  
T Tomaru ◽  
D Tatsumi ◽  
S Miyoki ◽  
M Ohashi ◽  
...  
Keyword(s):  
Quality Factor ◽  
Mechanical Quality Factor ◽  
Cryogenic Temperatures ◽  
Mechanical Quality ◽  
Sapphire Fiber

Dielectric Property of PZT Thin Films Doped with PMnN

2012 ◽  
Vol 569 ◽  
pp. 35-38
Author(s):  
Tao Zhang ◽  
Min Li ◽  
Ting Liu ◽  
Bin Sun ◽  
Sheng Nan Zhou
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Property ◽  
Quality Factor ◽  
Mechanical Quality Factor ◽  
Dielectric Constants ◽  
Pzt Thin Films ◽  
Testing Frequency ◽  
Mechanical Quality ◽  
Doping Ratio

The high piezoelectricity and high mechanical quality factor thin films are very important for the fabrications of micro devices. The Pb(Zrx,Ti1-x)O3(PZT) thin films own high piezoelectricity, however, its mechanical quality factor is small. The proper doping of Pb(Mn1/3,Nb2/3)O3(PMnN) will perfectly improve the mechanical quality of the films. However, the doping of PMnN will change the dielectric property of PZT thin films, and so it’s very necessary to investigate the dielectric property of PZT thin films doped with different ratio of PMnN. In this paper, the Pb(Mn1/3,Nb2/3)O3- PbZrO3-PbTiO3(PMnN-PZT) thin films with different doping ratio of PMnN are deposited by the magnetron sputtering method, and the X-ray diffraction is applied to analyze the structure of thin films, and the relative dielectric constant are characterized by the LCR testing system. The results show that the PMnN-PZT thin films with smaller doping ratio than 20% exhibit polycrstal structure, and the dielectric constant of thin films increase with the doping ratio of PMnN sharply, especially the doped PMnN is smaller than 6 mol percent. All the dielectric constants decrease with the testing frequency, and which have little change if the testing frequency is larger than 2.5kHz.

Sign in / Sign up

Export Citation Format

Share Document