Reducing Grain-Boundary Resistivity of Copper Nanowires by Doping

2016 ◽  
Vol 5 (5) ◽  
Author(s):  
Mathieu César ◽  
Daniel Gall ◽  
Hong Guo
Keyword(s):  
Grain Boundary ◽  
Copper Nanowires ◽  
Grain Boundary Resistivity

Structural Dependence of Grain Boundary Resistivity in Copper Nanowires

2011 ◽  
Vol 50 (8S3) ◽  
pp. 08LB09 ◽  
Author(s):  
Tae-Hwan Kim ◽  
Don M. Nicholson ◽  
X.-G. Zhang ◽  
Boyd M. Evans ◽  
Nagraj S. Kulkarni ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Copper Nanowires ◽  
Structural Dependence ◽  
Grain Boundary Resistivity

Structural Dependence of Grain Boundary Resistivity in Copper Nanowires

2011 ◽  
Vol 50 (8) ◽  
pp. 08LB09 ◽  
Author(s):  
Tae-Hwan Kim ◽  
Don M. Nicholson ◽  
X.-G. Zhang ◽  
Boyd M. Evans ◽  
Nagraj S. Kulkarni ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Copper Nanowires ◽  
Structural Dependence ◽  
Grain Boundary Resistivity

Solvent‐deficient method lowers grain‐boundary resistivity of doped ceria

2019 ◽  
Vol 103 (2) ◽  
pp. 819-830
Author(s):  
Hiraku Maruyama ◽  
Saša Zeljković ◽  
Juan C. Nino
Keyword(s):  
Grain Boundary ◽  
Doped Ceria ◽  
Grain Boundary Resistivity

Effect of BaCO3 and Pb3O4 on Properties of BaTiO3-Based PTCR Ceramics

2007 ◽  
Vol 280-283 ◽  
pp. 349-352
Author(s):  
Wei Bing Ma ◽  
Yuan Fang Qu ◽  
Yan Xia Hao
Keyword(s):  
Electrical Properties ◽  
Grain Boundary ◽  
High Performance ◽  
Room Temperature ◽  
Sintering Behavior ◽  
Low Resistivity ◽  
Phase Constituent ◽  
Weak Reduction ◽  
Grain Boundary Resistivity

High-performance PTCR ceramics with low resistivity (8Ω.cm) at room temperature and around four orders magnitude of the PTCR jump were obtained by adding BaCO3 and Pb3O4(B-P) in BaTiO3. The influence of adding B-P on the sintering behavior, the microstructure and the electrical properties of BaTiO3-based PTCR was investigated. The phase constituent in the sintered ceramics was analyzed by XRD and it was shown that the metallic layered Ba3Pb2O7 phase was synthesized during the sintering. Analysis suggested that making the weak reduction atmosphere at the grain boundary may decrease the grain-boundary resistivity.

Electrical Resistivity as a Characterization Tool for Nanocrystalline Metals

1999 ◽  
Vol 581 ◽  
Author(s):  
J.L. McCrea ◽  
K.T. Aust ◽  
G. Palumbo ◽  
U. Erb
Keyword(s):  
Thermal Stability ◽  
Grain Size ◽  
Electrical Resistivity ◽  
Grain Boundary ◽  
Nanocrystalline Materials ◽  
Elevated Temperatures ◽  
Polycrystalline Materials ◽  
Grain Growth Kinetics ◽  
Insight Into ◽  
Grain Boundary Resistivity

ABSTRACTThe electrical resistivity as a function of temperature (4K to 673K) of several electrodeposited nanocrystalline materials (Ni, Ni-Fe, Co) has been examined. The contribution of the grain boundaries to the electrical resistivity was quantified in terms of a specific grain boundary resistivity, which was found to be similar to previously reported values of specific grain boundary resistivity for copper and aluminum obtained from studies involving polycrystalline materials. In the high temperature range, the resistivity of the nanocrystalline samples was monitored as a function of time. The observed time dependence of the resistivity at elevated temperatures was correlated to microstructural changes in the material. The study has shown that electrical resistivity is an excellent characterization tool for nanocrystalline materials giving useful information regarding grain size and degree of thermal stability, as well as some insight into the grain growth kinetics at various temperatures.

scholarly journals Grain Boundary Resistivity of Yttria-Stabilized Zirconia at 1400°C

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
J. Wang ◽  
A. Du ◽  
Di Yang ◽  
R. Raj ◽  
H. Conrad
Keyword(s):  
Grain Size ◽  
Grain Boundary ◽  
Electric Field ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Brick Layer Model ◽  
Dc Electric Field ◽  
Lower Temperature ◽  
Boundary Width ◽  
Grain Boundary Resistivity

The grain size dependence of the bulk resistivity of 3 mol% yttria-stabilized zirconia at 1400°C was determined from the effect of a dc electric field Ea=18.1 V/cm on grain growth and the corresponding electric current during isothermal annealing tests. Employing the brick layer model, the present annealing test results were in accordance with extrapolations of the values obtained at lower temperature employing impedance spectroscopy and 4-point-probe dc. The combined values give that the magnitude of the grain boundary resistivity ρb=133 ohm-cm. The electric field across the grain boundary width was 28–43 times the applied field for the grain size and current ranges in the present annealing test.

Sign in / Sign up

Export Citation Format

Share Document