scholarly journals High-Resolution ac Measurements of the Hall Effect in Organic Field-Effect Transistors

2016 ◽  
Vol 5 (3) ◽  
Author(s):  
Y. Chen ◽  
H. T. Yi ◽  
V. Podzorov
Keyword(s):  
High Resolution ◽  
Hall Effect ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

High-resolution organic field-effect transistors manufactured by electrohydrodynamic inkjet printing of doped electrodes

2020 ◽  
Vol 8 (43) ◽  
pp. 15219-15223
Author(s):  
Jing Zhang ◽  
Bowen Geng ◽  
Shuming Duan ◽  
Congcong Huang ◽  
Yue Xi ◽  
...  
Keyword(s):  
High Resolution ◽  
Inkjet Printing ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Top Contact

A top-contact, sub-5 μm resolution OFET is realized using inkjet printed electrodes with different F4-TCNQ doping concentrations.

A novel method for photolithographic polymer shadow masking: toward high-resolution high-performance top-contact organic field effect transistors

2014 ◽  
Vol 50 (61) ◽  
pp. 8328-8330 ◽  
Author(s):  
Deyang Ji ◽  
Longfeng Jiang ◽  
Lang Jiang ◽  
Xiaolong Fu ◽  
Huanli Dong ◽  
...  
Keyword(s):  
High Resolution ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Novel Method ◽  
Top Contact

The present work shows a novel method to prepare polymer-based masks called photolithographic polymer shadow masking and its application in the process of fabricating top-contact high-resolution OFETs.

Hall Effect in Organic Single-crystal Field-effect Transistors

2006 ◽  
Vol 937 ◽  
Author(s):  
Jun Takeya ◽  
Koichi Yamada ◽  
Kazuhito Tsukagoshi ◽  
Yoshinobu Aoyagi ◽  
Taishi Takenobu ◽  
...  
Keyword(s):  
Electric Field ◽  
Hall Effect ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Carriers ◽  
Direct Access ◽  
Positive Sign ◽  
Organic Field Effect Transistors ◽  
Crystal Field Effect ◽  
Gas System

ABSTRACTWe report Hall effect of charge carriers accumulated in organic field-effect transistors. Rubrene (C42H28) single crystals are shaped in to the Hall-bar congiguration in the devices so that the Hall signal is appropriately detected in external magnetic fields. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The observation of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system. The direct access to the density of mobile charge carriers provides a tool to understand nontrivial features of organic field-effect transistors such as gate electric field dependent mobility.

Poly(sodium-4-styrene sulfonate) (PSSNa)-assisted transferable flexible, top-contact high-resolution free-standing organic field-effect transistors

RSC Advances ◽  
2015 ◽  
Vol 5 (119) ◽  
pp. 98288-98292 ◽  
Author(s):  
Deyang Ji ◽  
Ansgar Dominique Donner ◽  
Gerhard Wilde ◽  
Wenping Hu ◽  
Harald Fuchs
Keyword(s):  
High Resolution ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Free Standing ◽  
Styrene Sulfonate ◽  
Top Contact

Here we demonstrate how, by means of poly(sodium-4-styrene sulfonate), one can successfully transfer the free-standing, flexible, high-resolution top-contact OFETs based on polystyrene insulator to arbitrary substrates.

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