scholarly journals High-Precision Angle-Resolved Magnetometry with Uniaxial Quantum Centers in Silicon Carbide

2015 ◽  
Vol 4 (1) ◽  
Author(s):  
D. Simin ◽  
F. Fuchs ◽  
H. Kraus ◽  
A. Sperlich ◽  
P. G. Baranov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Precision

MeV Self Ion Beam Induced Amorphisation of Silicon Carbide Surfaces and Its Effect on Their Trdbomechanical Propertdzs

1991 ◽  
Vol 235 ◽  
Author(s):  
D. K. Sood ◽  
V. C. Nath ◽  
Yang Xi
Keyword(s):  
Silicon Carbide ◽  
Raman Scattering ◽  
High Precision ◽  
Friction And Wear ◽  
Ion Beam ◽  
Steel Ball ◽  
Carbon Ions ◽  
Ion Energy ◽  
Number Of Cycles ◽  
Tribomechanical Properties

ABSTRACTAmorphisation of sintered SiC by bombardment with self (C, Si) ions has been studied. Ion doses ranged from 1×1015 to 1×1017 ions/cm2; and ion energy was varied from 0.09 to 5 MeV. Amorphisation was detected by micro-focus Raman scattering. Tribomechanical properties-friction and wear were studied with a high precision pin (steel ball) and disc (implanted) machine. Results show substantial improvements in friction and wear, which persist to a large number of cycles. Tribomechanical properties are shown to correlate with surface amorphisation and carburisation. Carbon ions are found to be much more effective than Si ions (with similar damage distributions) in reducing friction and wear.

Irradiation behavior of pyrolytic silicon carbide

1983 ◽  
Vol 41 ◽  
pp. 72-73
Author(s):  
R. J. Lauf
Keyword(s):  
Silicon Carbide ◽  
Fission Products ◽  
Thermodynamics And Kinetics ◽  
Neutron Fluences ◽  
Fuel Particles ◽  
Sic Coatings ◽  
Irradiation Behavior ◽  
Kinetics Of ◽  
Htgr Fuel

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

Microstructural Evaluation of Silicon Carbide Whisker Reinforced Alumina Fabricated with Carbon-Coated Whiskers

1991 ◽  
Vol 49 ◽  
pp. 920-921
Author(s):  
K. B. Alexander ◽  
P. F. Becher
Keyword(s):  
Silicon Carbide ◽  
High Resolution Electron Microscopy ◽  
Ceramic Composites ◽  
Interface Debonding ◽  
Resolution Electron ◽  
Microstructural Evaluation ◽  
Carbon Coated ◽  
Electron Energy Loss ◽  
Interfacial Films ◽  
Debonding Process

The presence of interfacial films at the whisker-matrix interface can significantly influence the fracture toughness of ceramic composites. The film may alter the interface debonding process though changes in either the interfacial fracture energy or the residual stress at the interface. In addition, the films may affect the whisker pullout process through the frictional sliding coefficients or the extent of mechanical interlocking of the interface due to the whisker surface topography.Composites containing ACMC silicon carbide whiskers (SiCw) which had been coated with 5-10 nm of carbon and Tokai whiskers coated with 2 nm of carbon have been examined. High resolution electron microscopy (HREM) images of the interface were obtained with a JEOL 4000EX electron microscope. The whisker geometry used for HREM imaging is described in Reference 2. High spatial resolution (< 2-nm-diameter probe) parallel-collection electron energy loss spectroscopy (PEELS) measurements were obtained with a Philips EM400T/FEG microscope equipped with a Gatan Model 666 spectrometer.

Automatic measurement of SAED patterns from asbestos minerals

1988 ◽  
Vol 46 ◽  
pp. 846-847
Author(s):  
J. C. Russ ◽  
T. Taguchi ◽  
P. M. Peters ◽  
E. Chatfield ◽  
J. C. Russ ◽  
...  
Keyword(s):  
Diffraction Pattern ◽  
High Precision ◽  
Diffraction Data ◽  
Automatic Measurement ◽  
Automatic Method ◽  
Important Method ◽  
X Ray ◽  
Integrated Intensity ◽  
Asbestiform Minerals ◽  
True Center

Conventional SAD patterns as obtained in the TEM present difficulties for identification of materials such as asbestiform minerals, although diffraction data is considered to be an important method for making this purpose. The preferred orientation of the fibers and the spotty patterns that are obtained do not readily lend themselves to measurement of the integrated intensity values for each d-spacing, and even the d-spacings may be hard to determine precisely because the true center location for the broken rings requires estimation. We have implemented an automatic method for diffraction pattern measurement to overcome these problems. It automatically locates the center of patterns with high precision, measures the radius of each ring of spots in the pattern, and integrates the density of spots in that ring. The resulting spectrum of intensity vs. radius is then used just as a conventional X-ray diffractometer scan would be, to locate peaks and produce a list of d,I values suitable for search/match comparison to known or expected phases.

On effects of non-systematic reflections on weak-beam images of partial dislocations

1991 ◽  
Vol 49 ◽  
pp. 688-689
Author(s):  
K. Z. Botros ◽  
S. S. Sheinin
Keyword(s):  
High Precision ◽  
Stacking Fault ◽  
Important Application ◽  
Stacking Fault Energy ◽  
Sharp Peak ◽  
Weak Beam ◽  
Partial Dislocations ◽  
Deviation Parameter ◽  
Beam Diffraction

The main features of weak beam images of dislocations were first described by Cockayne et al. using calculations of intensity profiles based on the kinematical and two beam dynamical theories. The feature of weak beam images which is of particular interest in this investigation is that intensity profiles exhibit a sharp peak located at a position very close to the position of the dislocation in the crystal. This property of weak beam images of dislocations has an important application in the determination of stacking fault energy of crystals. This can easily be done since the separation of the partial dislocations bounding a stacking fault ribbon can be measured with high precision, assuming of course that the weak beam relationship between the positions of the image and the dislocation is valid. In order to carry out measurements such as these in practice the specimen must be tilted to "good" weak beam diffraction conditions, which implies utilizing high values of the deviation parameter Sg.

Digital differential hysteresis iimage processing displays what the microscope acquires but the eye can't see

1995 ◽  
Vol 53 ◽  
pp. 642-643
Author(s):  
Klaus-Ruediger Peters
Keyword(s):  
Image Processing ◽  
Visual System ◽  
High Precision ◽  
Image Data ◽  
Processing Technology ◽  
Output Data ◽  
Contrast Resolution ◽  
Pixel Intensity ◽  
Data Reading ◽  
Hysteresis Properties

Differential hysteresis processing is a new image processing technology that provides a tool for the display of image data information at any level of differential contrast resolution. This includes the maximum contrast resolution of the acquisition system which may be 1,000-times higher than that of the visual system (16 bit versus 6 bit). All microscopes acquire high precision contrasts at a level of <0.01-25% of the acquisition range in 16-bit - 8-bit data, but these contrasts are mostly invisible or only partially visible even in conventionally enhanced images. The processing principle of the differential hysteresis tool is based on hysteresis properties of intensity variations within an image.Differential hysteresis image processing moves a cursor of selected intensity range (hysteresis range) along lines through the image data reading each successive pixel intensity. The midpoint of the cursor provides the output data. If the intensity value of the following pixel falls outside of the actual cursor endpoint values, then the cursor follows the data either with its top or with its bottom, but if the pixels' intensity value falls within the cursor range, then the cursor maintains its intensity value.

TEM of grain growth and phase transformations during creep of SCS-6 silicon carbide fibers

1995 ◽  
Vol 53 ◽  
pp. 350-351
Author(s):  
L. A. Giannuzzi ◽  
C. A. Lewinsohn ◽  
C. E. Bakis ◽  
R. E. Tressler
Keyword(s):  
Silicon Carbide ◽  
Creep Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Primary Creep ◽  
Excess Carbon ◽  
Silicon Carbide Fibers ◽  
Sic Fiber ◽  
Carbon Core ◽  
Grain Width

The SCS-6 SiC fiber is a 142 μm diameter fiber consisting of four distinct regions of βSiC. These SiC regions vary in excess carbon content ranging from 10 a/o down to 5 a/o in the SiC1 through SiC3 region. The SiC4 region is stoichiometric. The SiC sub-grains in all regions grow radially outward from the carbon core of the fiber during the chemical vapor deposition processing of these fibers. In general, the sub-grain width changes from 50nm to 250nm while maintaining an aspect ratio of ~10:1 from the SiC1 through the SiC4 regions. In addition, the SiC shows a <110> texture, i.e., the {111} planes lie ±15° along the fiber axes. Previous has shown that the SCS-6 fiber (as well as the SCS-9 and the developmental SCS-50 μm fiber) undergoes primary creep (i.e., the creep rate constantly decreases as a function of time) throughout the lifetime of the creep test.

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