scholarly journals Giant Spin Hall Effect and Switching Induced by Spin-Transfer Torque in aW/Co40Fe40B20/MgOStructure with Perpendicular Magnetic Anisotropy

2015 ◽  
Vol 3 (3) ◽  
Author(s):  
Qiang Hao ◽  
Gang Xiao
Keyword(s):  
Magnetic Anisotropy ◽  
Hall Effect ◽  
Perpendicular Magnetic Anisotropy ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Hall Effect

scholarly journals Enhancement of perpendicular magnetic anisotropy and transmission of spin-Hall-effect-induced spin currents by a Hf spacer layer in W/Hf/CoFeB/MgO layer structures

2014 ◽  
Vol 104 (8) ◽  
pp. 082407 ◽  
Author(s):  
Chi-Feng Pai ◽  
Minh-Hai Nguyen ◽  
Carina Belvin ◽  
Luis Henrique Vilela-Leão ◽  
D. C. Ralph ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Hall Effect ◽  
Perpendicular Magnetic Anisotropy ◽  
Spin Hall Effect ◽  
Spin Currents ◽  
Layer Structures ◽  
Spacer Layer

scholarly journals Spin‐Polarized Current, Spin‐Transfer Torque, and Spin Hall Effect in Presence of an Electromagnetic Non‐Minimal Coupling

2020 ◽  
Vol 532 (3) ◽  
pp. 1900357
Author(s):  
Rodrigo Turcati ◽  
Carlos Andres Bonilla Quintero ◽  
José Abdalla Helayël‐Neto ◽  
Enrique Arias
Keyword(s):  
Hall Effect ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Hall Effect ◽  
Minimal Coupling ◽  
Spin Polarized

scholarly journals Spin transfer torque devices utilizing the giant spin Hall effect of tungsten

2012 ◽  
Vol 101 (12) ◽  
pp. 122404 ◽  
Author(s):  
Chi-Feng Pai ◽  
Luqiao Liu ◽  
Y. Li ◽  
H. W. Tseng ◽  
D. C. Ralph ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Hall Effect

Perpendicular Magnetic Anisotropy in Amorphous Ferromagnetic CoSiB/Pd Thin-Film Layered Structures

2015 ◽  
Vol 15 (10) ◽  
pp. 8336-8339 ◽  
Author(s):  
Sol Jung ◽  
Haein Yim
Keyword(s):  
Magnetic Anisotropy ◽  
Saturation Magnetization ◽  
Random Access ◽  
Perpendicular Magnetic Anisotropy ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Access Memory ◽  
Magnetic Random Access Memory ◽  
Strong Candidate ◽  
Memory Applications

Spin transfer torque (STT) induced switching of magnetization has led to intriguing and practical possibilities for magnetic random access memory (MRAM). This form of memory, called STT-MRAM, is a strong candidate for future memory applications. This application usually requires a large perpendicular magnetic anisotropy (PMA), large coercivity, and low saturation magnetization. Therefore, we propose an amorphous ferromagnetic CoSiB alloy and investigate CoSiB/Pd multilayer thin films, which have a large PMA, large coercivity, and low saturation magnetization. In this research, we propose a remarkable layered structure that could be a candidate for future applications and try to address a few factors that might affect the variation of PMA, coercivity, and saturation magnetization in the CoSiB/Pd multilayers. We investigate the magnetic properties of the CoSiB/Pd multilayers with various thicknesses of the CoSiB layer. The coercivity was obtained with a maximum of 228 Oe and a minimum value of 91 Oe in the [CoSiB 7 Å/Pd 14 Å]5 and [CoSiB 9 Å/Pd 14 Å]5 multilayers, respectively. The PMA arises from tCoSiB = 3 Å to tCoSiB = 9 Å and disappears after tCoSiB = 9 Å.

scholarly journals Critical switching current density of magnetic tunnel junction with shape perpendicular magnetic anisotropy through the combination of spin-transfer and spin-orbit torques

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Doo Hyung Kang ◽  
Mincheol Shin
Keyword(s):  
Magnetic Anisotropy ◽  
Current Density ◽  
Perpendicular Magnetic Anisotropy ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Orbit ◽  
Switching Current ◽  
20 Nm ◽  
Hybrid Switching

AbstractRecently, magnetic tunnel junctions (MTJs) with shape perpendicular magnetic anisotropy (S-PMA) have been studied extensively because they ensure high thermal stability at junctions smaller than 20 nm. Furthermore, spin-transfer torque (STT) and spin-orbit torque (SOT) hybrid switching, which guarantees fast magnetization switching and deterministic switching, has recently been achieved in experiments. In this study, the critical switching current density of the MTJ with S-PMA through the interplay of STT and SOT was investigated using theoretical and numerical methods. As the current density inducing SOT ($$J_{\text {SOT}}$$ J SOT ) increases, the critical switching current density inducing STT ($$J_{\text {STT,c}}$$ J STT,c ) decreases. Furthermore, for a given $$J_{\text {SOT}}$$ J SOT , $$J_{\text {STT,c}}$$ J STT,c increases with increasing thickness, whereas $$J_{\text {STT,c}}$$ J STT,c decreases as the diameter increases. Moreover, $$J_{\text {STT,c}}$$ J STT,c in the plane of thickness and spin-orbit field-like torque ($$\beta$$ β ) was investigated for a fixed $$J_{\text {SOT}}$$ J SOT and diameter. Although $$J_{\text {STT,c}}$$ J STT,c decreases with increasing $$\beta$$ β , $$J_{\text {STT,c}}$$ J STT,c slowly increases with increasing thickness and increasing $$\beta$$ β . The power consumption was investigated as a function of thickness and diameter at the critical switching current density. Experimental confirmation of these results using existing experimental techniques is anticipated.

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