Self-Sustained Libration Regime in Nonlinear Microelectromechanical Devices

2021 ◽  
Vol 16 (6) ◽  
Author(s):  
Samer Houri ◽  
Motoki Asano ◽  
Hajime Okamoto ◽  
Hiroshi Yamaguchi
Keyword(s):  
Microelectromechanical Devices

Stability of microelectromechanical devices for electrical metrology

2001 ◽  
Vol 50 (6) ◽  
pp. 1499-1503 ◽  
Author(s):  
J. Kyynarainen ◽  
A.S. Oja ◽  
H. Seppa
Keyword(s):  
Microelectromechanical Devices

A Unified Epi-Seal Process for Fabrication of High-Stability Microelectromechanical Devices

2016 ◽  
Vol 25 (3) ◽  
pp. 489-497 ◽  
Author(s):  
Yushi Yang ◽  
Eldwin J. Ng ◽  
Yunhan Chen ◽  
Ian B. Flader ◽  
Thomas W. Kenny
Keyword(s):  
High Stability ◽  
Microelectromechanical Devices

The Interfacial Diffusion Zone in Magnetron Sputtered Ni-Ti Thin Films Deposited on Different Si Substrates Studied by HR-TEM

2008 ◽  
Vol 587-588 ◽  
pp. 820-823 ◽  
Author(s):  
Rui M.S. Martins ◽  
Manfred Beckers ◽  
A. Mücklich ◽  
Norbert Schell ◽  
Rui Jorge C. Silva ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Front ◽  
Interfacial Structure ◽  
Interfacial Diffusion ◽  
Tem Analysis ◽  
Si Substrates ◽  
Microelectromechanical Devices ◽  
Preferential Diffusion ◽  
High Resolution Tem ◽  
Columnar Grains

Ni-Ti Shape Memory Alloy thin films are suitable materials for microelectromechanical devices. During the deposition of Ni-Ti thin films on Si substrates, there exist interfacial diffusion and chemical interactions at the interface due to the high temperature processing necessary to crystallize the film. For the present study, Ni-Ti thin films were prepared by magnetron cosputtering from Ni-Ti and Ti targets in a specially designed chamber mounted on the 6-circle goniometer of the ROssendorf BeamLine (ROBL-CRG) at ESRF, Grenoble (France). The objective of this study has been to investigate the interfacial structure resulting from depositions (at a temperature of ≈ 470°C) on different substrates: naturally oxidized Si(100), Si(111) and poly-Si substrates. A detailed High-Resolution TEM analysis of the interfacial structure has been performed. When Ni-Ti is deposited on Si(100) substrate, a considerable diffusion of Ni into the substrate takes place, resulting in the growth of semi-octaeder A-NiSi2 silicide. In the case of Ni-Ti deposited on Si(111), there appears an uniform thickness plate, due to the alignment between substrate orientation and the [111]-growth front. For Ni-Ti deposited on poly-Si, the diffusion is inhomogeneous. Preferential diffusion is found along the columnar grains of poly-Si, which are favourably aligned for Ni diffusion. These results show that for the Ni-Ti/Si system, the morphology of the diffusion interface is strongly dependent on the type of substrates.

Experimental Studies of the Surface Forces on Micro Gap Plates with Different Bumps

2009 ◽  
Vol 60-61 ◽  
pp. 130-134
Author(s):  
Xue Jin Shen ◽  
Wei Jun Qi
Keyword(s):  
Experimental Studies ◽  
Surface Force ◽  
Surface Forces ◽  
Flexible Beam ◽  
Relative Importance ◽  
Drive Voltage ◽  
Microelectromechanical Devices ◽  
Micromechanical Structures ◽  
Micro Structures ◽  
Adhesion Condition

An experimental analysis of the influence of the bumps on the surface forces in micro gap plates is presented. Because of extremely small sizes of micromechanical structures in MEMS, surface forces between micromechanical components may become significant to influence behaviors of microelectromechanical devices. The bumps are important in micro structures as they change the adhesion condition of the plates, and will influence the surface forces in micro gap plates greatly. To identify relative importance of surface forces with bumps, the experimental instrument which consists of the V-shaped electrothermal microactuator, the suspended plate and the flexible beam is designed. The displacements of the suspended plate with different bumps are measured by experiments, and the surface forces are got by calculation. By analysis, it could be found that the surface force increases with the increasing drive voltage and the increasing normal voltage, and the surface force gets the minimum when the number of the bumps is 9.

Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices

2004 ◽  
Vol 84 (14) ◽  
pp. 2566-2568 ◽  
Author(s):  
S. Davies ◽  
T. S. Huang ◽  
M. H. Gass ◽  
A. J. Papworth ◽  
T. B. Joyce ◽  
...  
Keyword(s):  
Silicon Substrates ◽  
Microelectromechanical Devices

Time-Resolved Micro-Raman Thermometry for Microsystems in Motion

2008 ◽  
Vol 130 (12) ◽  
Author(s):  
Justin R. Serrano ◽  
Sean P. Kearney
Keyword(s):  
Microelectromechanical Systems ◽  
Diagnostic Technique ◽  
Temperature Measurements ◽  
Transient Temperature ◽  
Raman Signal ◽  
Periodic Signal ◽  
Fast Time ◽  
Time Resolved ◽  
Microelectromechanical Devices ◽  
Reliable Temperature

Micro-Raman thermometry has been demonstrated to be a feasible technique for obtaining surface temperatures with micron-scale spatial resolution for microelectronic and microelectromechanical systems (MEMSs). However, the intensity of the Raman signal emerging from the probed device is very low and imposes a requirement of prolonged data collection times in order to obtain reliable temperature information. This characteristic currently limits Raman thermometry to steady-state conditions and thereby prevents temperature measurements of transient and fast time-scale events. In this paper, we discuss the extension of the micro-Raman thermometry diagnostic technique to obtain transient temperature measurements on microelectromechanical devices with 100 μs temporal resolution. Through the use of a phase-locked technique we are able to obtain temperature measurements on electrically powered MEMS actuators powered with a periodic signal. Furthermore, we demonstrate a way of obtaining reliable temperature measurements on micron-scale devices that undergo mechanical movement during the device operation.

Thin-Film Microelectromechanical Devices on Large-Area Substrates

2001 ◽  
Vol 80-81 ◽  
pp. 429-440 ◽  
Author(s):  
Virginia Chu ◽  
João Pedro Conde ◽  
Mário Boucinha ◽  
João Gaspar ◽  
Pedro Brogueira
Keyword(s):  
Thin Film ◽  
Large Area ◽  
Microelectromechanical Devices

Materials issues in microelectromechanical devices: science, engineering, manufacturability and reliability

2003 ◽  
Vol 51 (19) ◽  
pp. 5837-5866 ◽  
Author(s):  
A.D Romig ◽  
Michael T Dugger ◽  
Paul J McWhorter
Keyword(s):  
Microelectromechanical Devices
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