scholarly journals Origin of Enhanced Electromechanical Coupling in (Yb,Al)N Nitride Alloys

2021 ◽  
Vol 16 (4) ◽  
Author(s):  
Junjun Jia ◽  
Takahiko Yanagitani
Keyword(s):  
Electromechanical Coupling ◽  
Nitride Alloys

An hourglass-type electromagnetic isolator with negative resistance electromagnetic shunt circuit

2020 ◽  
Vol 64 (1-4) ◽  
pp. 549-556
Author(s):  
Yajun Luo ◽  
Linwei Ji ◽  
Yahong Zhang ◽  
Minglong Xu ◽  
Xinong Zhang
Keyword(s):  
Vibration Isolation ◽  
Electromechanical Coupling ◽  
Coupling Effect ◽  
Negative Resistance ◽  
Isolation System ◽  
Amplitude Vibration ◽  
Vibration Responses ◽  
The Stability ◽  
Isolation Performance ◽  
Shunt Circuit

The present work proposed an hourglass-type electromagnetic isolator with negative resistance (NR) shunt circuit to achieve the effective suppression of the micro-amplitude vibration response in various advanced instruments and equipment. By innovatively design of combining the displacement amplifier and the NR electromagnetic shunt circuit, the current new type of vibration isolator not only can effectively solve the problem of micro-amplitude vibration control, but also has significant electromechanical coupling effect, to obtain excellent vibration isolation performance. The design of the isolator and motion relationship is presented firstly. The electromechanical coupling dynamic model of the isolator is also given. Moreover, the optimal design of the NR electromagnetic shunt circuit and the stability analysis of the vibration isolation system are carried out. Finally, the simulation results about the transfer function and vibration responses demonstrated that the isolator has a significant isolation performance.

scholarly journals Effects of Thermal Annealing on the Characteristics of High Frequency FBAR Devices

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 397
Author(s):  
Yu-Chen Chang ◽  
Ying-Chung Chen ◽  
Bing-Rui Li ◽  
Wei-Che Shih ◽  
Jyun-Min Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Annealing ◽  
Electromechanical Coupling ◽  
Zno Thin Films ◽  
Electromechanical Coupling Coefficient ◽  
Back Side ◽  
Zno Thin Film ◽  
Frequency Responses ◽  
Sputtering System

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.

scholarly journals Design and Analysis of a Novel Piezoceramic Stack-based Smart Aggregate

Sensors ◽  
2020 ◽  
Vol 20 (22) ◽  
pp. 6438
Author(s):  
Guangtao Lu ◽  
Xin Zhu ◽  
Tao Wang ◽  
Zhiqiang Hao ◽  
Bohai Tan
Keyword(s):  
Resonance Frequency ◽  
Electromechanical Coupling ◽  
Structural Parameters ◽  
Electromechanical Coupling Factor ◽  
Coupling Factor ◽  
Stress Waves ◽  
Parallel Connection ◽  
Smart Aggregate ◽  
In Series ◽  
Piezoelectric Wafers

A novel piezoceramic stack-based smart aggregate (PiSSA) with piezoceramic wafers in series or parallel connection is developed to increase the efficiency and output performance over the conventional smart aggregate with only one piezoelectric patch. Due to the improvement, PiSSA is suitable for situations where the stress waves easily attenuate. In PiSSA, the piezoelectric wafers are electrically connected in series or parallel, and three types of piezoelectric wafers with different electrode patterns are designed for easy connection. Based on the theory of piezo-elasticity, a simplified one-dimensional model is derived to study the electromechanical, transmitting and sensing performance of PiSSAs with the wafers in series and parallel connection, and the model was verified by experiments. The theoretical results reveal that the first resonance frequency of PiSSAs in series and parallel decreases as the number or thickness of the PZT wafers increases, and the first electromechanical coupling factor increases firstly and then decrease gradually as the number or thickness increases. The results also show that both the first resonance frequency and the first electromechanical coupling factor of PiSSA in series and parallel change no more than 0.87% as the Young’s modulus of the epoxy increases from 0.5 to 1.5 times 3.2 GPa, which is helpful for the fabrication of PiSSAs. In addition, the displacement output of PiSSAs in parallel is about 2.18–22.49 times that in series at 1–50 kHz, while the voltage output of PiSSAs in parallel is much less than that in parallel, which indicates that PiSSA in parallel is much more suitable for working as an actuator to excite stress waves and PiSSA in series is suitable for working as a sensor to detect the waves. All the results demonstrate that the connecting type, number and thickness of the PZT wafers should be carefully selected to increase the efficiency and output of PiSSA actuators and sensors. This study contributes to providing a method to investigate the characteristics and optimize the structural parameters of the proposed PiSSAs.

scholarly journals Sideband-resolved resonator electromechanics based on a nonlinear Josephson inductance probed on the single-photon level

2020 ◽  
Vol 3 (1) ◽  
Author(s):  
Philip Schmidt ◽  
Mohammad T. Amawi ◽  
Stefan Pogorzalek ◽  
Frank Deppe ◽  
Achim Marx ◽  
...  
Keyword(s):  
Quantum Interference ◽  
Electromechanical Coupling ◽  
Single Photon ◽  
Capacitive Coupling ◽  
Inductive Coupling ◽  
Coupling Scheme ◽  
Strong Coupling Regime ◽  
Coupling Rate ◽  
Light Matter Interaction ◽  
Microwave Regime

AbstractLight-matter interaction in optomechanical systems is the foundation for ultra-sensitive detection schemes as well as the generation of phononic and photonic quantum states. Electromechanical systems realize this optomechanical interaction in the microwave regime. In this context, capacitive coupling arrangements demonstrated interaction rates of up to 280 Hz. Complementary, early proposals and experiments suggest that inductive coupling schemes are tunable and have the potential to reach the single-photon strong-coupling regime. Here, we follow the latter approach by integrating a partly suspended superconducting quantum interference device (SQUID) into a microwave resonator. The mechanical displacement translates into a time varying flux in the SQUID loop, thereby providing an inductive electromechanical coupling. We demonstrate a sideband-resolved electromechanical system with a tunable vacuum coupling rate of up to 1.62 kHz, realizing sub-aN Hz−1/2 force sensitivities. The presented inductive coupling scheme shows the high potential of SQUID-based electromechanics for targeting the full wealth of the intrinsically nonlinear optomechanics Hamiltonian.

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