Field-Induced Electron Spin Resonance of Site-Selective Carrier Accumulation in Field-Effect Transistors Composed of Organic Semiconductor Solid Solutions

2021 ◽  
Vol 16 (3) ◽  
Author(s):  
Hiroyuki Matsui ◽  
Eiji Takahashi ◽  
Seiji Tsuzuki ◽  
Kazuo Takimiya ◽  
Tatsuo Hasegawa
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Solid Solutions ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Spin Resonance ◽  
Site Selective

Matrix dependence of the electron spin resonance spectra of the radical trapped in different single crystals

1977 ◽  
Vol 55 (20) ◽  
pp. 3554-3558 ◽  
Author(s):  
J. P. Michaut ◽  
J. Roncin
Keyword(s):  
Electron Spin Resonance ◽  
Single Crystal ◽  
Single Crystals ◽  
Electron Spin ◽  
Experimental Error ◽  
Field Effect ◽  
Coupling Constants ◽  
Crystal Field Effect ◽  
Proton Coupling ◽  
Spin Resonance

Nitrogen and proton coupling tensors have been measured for the [Formula: see text] radical trapped in five different single crystal matrices. As all isotropic coupling constants are the same within experimental error (aN = 21.2 G, aH = 28.4 G), no measurable crystal field effect is found. In these solids the motions of the radical depend on the dimension of the trapping cage and the motions of the surrounding molecules.

Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors

2005 ◽  
Vol 483-485 ◽  
pp. 593-596 ◽  
Author(s):  
David J. Meyer ◽  
Morgen S. Dautrich ◽  
Patrick M. Lenahan ◽  
Aivars J. Lelis
Keyword(s):  
Silicon Carbide ◽  
Electron Spin Resonance ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Deep Level ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Spin Resonance ◽  
Trapping Centers

Utilizing an very sensitive electron spin resonance (ESR) technique, spin dependent recombination (SDR) we have identified interface and near interface trapping centers in 4H and 6H SiC/SiO2 metal oxide semiconductor field effect transistors (MOSFETs). We extend our group’s earlier observations on 6H devices to the more technologically important 4H system and find that several centers can play important roles in limiting the performance of SiC based MOSFETs.

Conduction electron spin resonance in lithium-magnesium solid solutions

1965 ◽  
Vol 12 (116) ◽  
pp. 433-435 ◽  
Author(s):  
G. D. Wignall ◽  
J. E. Enderby ◽  
C. E. W. Hahn ◽  
J. M. Titman
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Solid Solutions ◽  
Conduction Electron ◽  
Spin Resonance
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