Bilateral Photoresponse of a Graphene-Oxide-Semiconductor Heterostructure Diode

2021 ◽  
Vol 15 (5) ◽  
Author(s):  
Ching-Ping Lee ◽  
Ming-Ying Cai ◽  
Jen-Yu Wang ◽  
D.C. Ling ◽  
Yung-Fu Chen ◽  
...  
2002 ◽  
Vol 743 ◽  
Author(s):  
Z. Y. Fan ◽  
J. Li ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
Y. Liu ◽  
...  

ABSTRACTThe fabrication and characterization of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with the δ-doped barrier are reported. The incorporation of the SiO2 insulated-gate and the δ-doped barrier into HFET structures reduces the gate leakage and improves the 2D channel carrier mobility. The device has a high drain-current-driving and gate-control capabilities as well as a very high gate-drain breakdown voltage of 200 V, a cutoff frequency of 15 GHz and a maximum frequency of oscillation of 34 GHz for a gate length of 1 μm. These characteristics indicate a great potential of this structure for high-power-microwave applications.


2001 ◽  
Vol 37 (11) ◽  
pp. 715 ◽  
Author(s):  
T. Rotter ◽  
D. Mistele ◽  
J. Stemmer ◽  
M. Seyboth ◽  
V. Schwegler ◽  
...  

Author(s):  
Isaac Ruiz ◽  
Thomas E. Beechem ◽  
Gyorgy Vizkelethy ◽  
Paul M. Thelen ◽  
Joshua Shank ◽  
...  

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