scholarly journals Thermal Relaxation in Metal Films Limited by Diffuson Lattice Excitations of Amorphous Substrates

2021 ◽  
Vol 15 (5) ◽  
Author(s):  
Elmira M. Baeva ◽  
Nadezhda A. Titova ◽  
Louis Veyrat ◽  
Benjamin Sacépé ◽  
Alexander V. Semenov ◽  
...  
Keyword(s):  
Thermal Relaxation ◽  
Metal Films ◽  
Amorphous Substrates

Propagation of new dynamics of longitudinal bud equation among a magneto-electro-elastic round rod

2021 ◽  
Author(s):  
Mostafa M. A. Khater ◽  
Adil Jhangeer ◽  
Hadi Rezazadeh ◽  
Lanre Akinyemi ◽  
M. Ali Akbar ◽  
...  
Keyword(s):  
Differential Equations ◽  
Riccati Equation ◽  
Amorphous Silica ◽  
Plasma Frequency ◽  
Polarized Light ◽  
Metal Films ◽  
Mapping Method ◽  
Longitudinal Waves ◽  
Generalized Riccati Equation ◽  
Amorphous Substrates

In this survey, structure solutions for the longitudinal suspense equation within a magneto-electro-elastic (MEE) circular judgment are extracted via the implementation of two one-of-a-kind techniques that are viewed as the close generalized technique in its field. This paper describes the dynamics of the longitudinal suspense within a MEE round rod. Nilsson and Lindau provided the visual proof of the arrival concerning longitudinal waves within thin metal films. They recommended removal of anomalies between the ports concerning emaciated ([Formula: see text] Å) Ag layers preserved on amorphous silica because of being mildly [Formula: see text]-polarized at frequency tier according to the brawny plasma frequency. Anomalies have been due to confusion over the longitudinal waves mirrored utilizing the two borders. The wavelength is connected according to this wave’s property, which is an awful lot smaller than the wave over light. The wave is outstanding only for altogether superfine films. However, metallic movies defended amorphous substrates that are intermittent within the forward levels of their evolution. This made researchers aware of the possibility on getting ready altogether few layers with a desire to discussing the promulgation about longitudinal waves up to expectation colorful each among reverberation or transport on [Formula: see text]-polarized light. The mated options via the use of generalized Riccati equation mapping method or generalized Kudryashov technique show the rule and effectiveness regarding its methods then its ability because of applying one kind of forms over nonlinear incomplete differential equations.

Texture transformations in reactive metal films deposited upon amorphous substrates

2001 ◽  
Vol 89 (5) ◽  
pp. 2635-2640 ◽  
Author(s):  
D. N. Dunn ◽  
R. Hull ◽  
F. M. Ross ◽  
R. M. Tromp
Keyword(s):  
Metal Films ◽  
Reactive Metal ◽  
Amorphous Substrates

scholarly journals Dynamics of ultrathin metal films on amorphous substrates under fast thermal processing

2007 ◽  
Vol 102 (10) ◽  
pp. 104308 ◽  
Author(s):  
Christopher Favazza ◽  
Ramki Kalyanaraman ◽  
Radhakrishna Sureshkumar
Keyword(s):  
Thermal Processing ◽  
Metal Films ◽  
Ultrathin Metal Films ◽  
Amorphous Substrates

Macromolecular structures of biological specimens are not obscured by controlled osmium impregnation

1983 ◽  
Vol 41 ◽  
pp. 606-607
Author(s):  
Klaus-Ruediger Peters ◽  
Samuel A. Green
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Critical Point ◽  
Metal Films ◽  
High Magnification ◽  
Osmium Impregnation ◽  
Instrumental Resolution ◽  
20 Nm ◽  
Continuous Metal

High magnification imaging of macromolecules on metal coated biological specimens is limited only by wet preparation procedures since recently obtained instrumental resolution allows visualization of topographic structures as smal l as 1-2 nm. Details of such dimensions may be visualized if continuous metal films with a thickness of 2 nm or less are applied. Such thin films give sufficient contrast in TEM as well as in SEM (SE-I image mode). The requisite increase in electrical conductivity for SEM of biological specimens is achieved through the use of ligand mediated wet osmiuum impregnation of the specimen before critical point (CP) drying. A commonly used ligand is thiocarbohvdrazide (TCH), first introduced to TEM for en block staining of lipids and glvcomacromolecules with osmium black. Now TCH is also used for SEM. However, after ligand mediated osinification nonspecific osmium black precipitates were often found obscuring surface details with large diffuse aggregates or with dense particular deposits, 2-20 nm in size. Thus, only low magnification work was considered possible after TCH appl ication.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

Microstructural characterization of YBaCuO Films on LaAlO3 substrates

1989 ◽  
Vol 47 ◽  
pp. 180-181
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
N. Lewis ◽  
L. G. Turner
Keyword(s):  
Dielectric Constant ◽  
Single Crystal ◽  
Film Growth ◽  
Microstructural Characterization ◽  
Lattice Parameter ◽  
Film Plane ◽  
Substrate Material ◽  
High Loss ◽  
Amorphous Substrates ◽  
High Dielectric

There have been a large number of recent studies of the growth of Y-Ba-Cu-O thin films, and these studies have employed a variety of substrates and growth techniques. To date, the highest values of Tc and Jc have been found for films grown by sputtering or coevaporation on single-crystal SrTiO3 substrates, which produces a uniaxially-aligned film with the YBa2Cu3Ox c-axis normal to the film plane. Multilayer growth of films on the same substrate produces a triaxially-aligned film (regions of the film have their c-axis parallel to each of the three substrate <100> directions) with lower values of Jc. Growth of films on a variety of other polycrystalline or amorphous substrates produces randomly-oriented polycrystalline films with low Jc. Although single-crystal SrTiO3 thus produces the best results, this substrate material has a number of undesireable characteristics relative to electronic applications, including very high dielectric constant and a high loss tangent at microwave frequencies. Recently, Simon et al. have shown that LaAlO3 could be used as a substrate for YBaCuO film growth. This substrate is essentially a cubic perovskite with a lattice parameter of 0.3792nm (it has a slight rhombohedral distortion at room temperature) and this material exhibits much lower dielectric constant and microwave loss tangents than SrTiO3. It is also interesting from a film growth standpoint since it has a slightly smaller lattice parameter than YBa2Cu3Ox (a=0.382nm, b=c/3=0.389nm), while SrTiO3 is slightly larger (a=0.3905nm).

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