Terahertz Lasing with Weak Plasmon Modes in Periodic Graphene Structures

2021 ◽  
Vol 15 (3) ◽  
Author(s):  
Denis V. Fateev ◽  
Olga V. Polischuk ◽  
Konstantin V. Mashinsky ◽  
Ilya M. Moiseenko ◽  
Mikhail Yu. Morozov ◽  
...  
Keyword(s):  
Graphene Structures ◽  
Plasmon Modes

Plasmon modes in N-layer bilayer graphene structures

2019 ◽  
Vol 298 ◽  
pp. 113647 ◽  
Author(s):  
Nguyen Van Men ◽  
Nguyen Quoc Khanh ◽  
Dong Thi Kim Phuong
Keyword(s):  
Bilayer Graphene ◽  
Graphene Structures ◽  
Plasmon Modes

Plasmon modes in 3-layer graphene structures: Inhomogeneity effects

2019 ◽  
Vol 383 (33) ◽  
pp. 125971 ◽  
Author(s):  
Dong Thi Kim Phuong ◽  
Nguyen Van Men
Keyword(s):  
Layer Graphene ◽  
Graphene Structures ◽  
Plasmon Modes

Plasmon modes in N-layer graphene structures at zero temperature

2020 ◽  
Vol 201 (3-4) ◽  
pp. 311-320
Author(s):  
Phuong Dong Thi Kim ◽  
Men Nguyen Van
Keyword(s):  
Zero Temperature ◽  
Layer Graphene ◽  
Graphene Structures ◽  
Plasmon Modes

Cu Atoms Reknit the Graphene Structures

2015 ◽  
Vol 21 (S3) ◽  
pp. 741-742
Author(s):  
Emi Kano ◽  
Ayako Hashimoto ◽  
Masaki Takeguchi
Keyword(s):  
Graphene Structures

scholarly journals Monolayer Twisted Graphene-Based Schottky Transistor

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4109
Author(s):  
Ramin Ahmadi ◽  
Mohammad Taghi Ahmadi ◽  
Seyed Saeid Rahimian Koloor ◽  
Michal Petrů
Keyword(s):  
Dispersion Relation ◽  
Quantum Tunneling ◽  
Research Study ◽  
Channel Length ◽  
New Class ◽  
Metal Semiconductor Metal ◽  
The Relationship ◽  
Graphene Structures ◽  
Twisted Graphene ◽  
Device Technology

The outstanding properties of graphene-based components, such as twisted graphene, motivates nanoelectronic researchers to focus on their applications in device technology. Twisted graphene as a new class of graphene structures is investigated in the platform of transistor application in this research study. Therefore, its geometry effect on Schottky transistor operation is analyzed and the relationship between the diameter of twist and number of twists are explored. A metal–semiconductor–metal twisted graphene-based junction as a Schottky transistor is considered. By employing the dispersion relation and quantum tunneling the variation of transistor performance under channel length, the diameter of twisted graphene, and the number of twists deviation are studied. The results show that twisted graphene with a smaller diameter affects the efficiency of twisted graphene-based Schottky transistors. Additionally, as another main characteristic, the ID-VGS is explored, which indicates that the threshold voltage is increased by diameter and number of twists in this type of transistor.

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