scholarly journals δ-CS: A Direct-Band-Gap Semiconductor Combining Auxeticity, Ferroelasticity, and Potential for High-Efficiency Solar Cells

2020 ◽  
Vol 14 (4) ◽  
Author(s):  
Minglei Sun ◽  
Udo Schwingenschlögl
2012 ◽  
Author(s):  
Salah M. Bedair ◽  
◽  
John R. Hauser ◽  
Nadia Elmasry ◽  
Peter C. Colter ◽  
...  

2012 ◽  
Vol 18 (S5) ◽  
pp. 121-122 ◽  
Author(s):  
J. Bartolomé ◽  
D. Maestre ◽  
A. Cremades ◽  
J. Piqueras

Indium sulfide (In2S3) is a promising semiconductor material for window layers in solar cell devices and other optoelectronic applications as it presents a direct band gap around 2.0 eV at room temperature, and large photosensitivity and photoconductivity. The presence of several polymorphic structures depending on the processing parameters is also of interest to tailor the required material properties for different applications. It is currently being investigated for high efficiency solar cell based on CuInS2-In2S3 heterostructures, replacing CdS layers. Few studies have been reported on nanostructured In2S3 grown by several methods.


2017 ◽  
Vol 29 (19) ◽  
pp. 8369-8376 ◽  
Author(s):  
Xueliang Shi ◽  
Lijian Zuo ◽  
Sae Byeok Jo ◽  
Ke Gao ◽  
Francis Lin ◽  
...  

2019 ◽  
Vol 7 (24) ◽  
pp. 14689-14704 ◽  
Author(s):  
Mi-Hee Jung

We used hexylamine (CH3(CH2)4CH2NH2, HA) for a quasi-2D HA(CH3NH3)n−1PbnI3n+1 (n = 1, 2, 3, and 4) perovskite, which had sufficient long alkyl chains to maintain the chemical stability of the perovskite and exhibited an appropriate band gap for application to solar cells as a light absorber.


2008 ◽  
Author(s):  
Bernd Ahrens ◽  
Bastian Henke ◽  
Paul T. Miclea ◽  
Jacqueline A. Johnson ◽  
Stefan Schweizer

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