scholarly journals Space-Charge-Limited Photocurrents and Transient Currents in (Cd,Zn)Te Radiation Detectors

2020 ◽  
Vol 13 (6) ◽  
Author(s):  
Katarina Ridzonova ◽  
Eduard Belas ◽  
Roman Grill ◽  
Jakub Pekarek ◽  
Petr Praus
Keyword(s):  
Space Charge ◽  
Radiation Detectors ◽  
Transient Currents ◽  
Space Charge Limited

Space charge limited transient currents and oxygen vacancy mobility in amorphous BaTiO3 thin films

2006 ◽  
Vol 99 (9) ◽  
pp. 094107 ◽  
Author(s):  
F. El Kamel ◽  
P. Gonon ◽  
L. Ortega ◽  
F. Jomni ◽  
B. Yangui
Keyword(s):  
Thin Films ◽  
Oxygen Vacancy ◽  
Space Charge ◽  
Transient Currents ◽  
Space Charge Limited

Electrode‐Limited and Space‐Charge‐Limited Transient Currents in Insulators

1968 ◽  
Vol 39 (5) ◽  
pp. 2296-2302 ◽  
Author(s):  
S. Z. Weisz ◽  
A. Cobas ◽  
S. Trester ◽  
A. Many
Keyword(s):  
Space Charge ◽  
Transient Currents ◽  
Space Charge Limited

Space-charge-limited current in GaAs

1966 ◽  
Vol 2 (7) ◽  
pp. 282
Author(s):  
A.M. Phahle ◽  
K.C. Kao ◽  
J.H. Calderwood
Keyword(s):  
Space Charge ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Study of Electron Transport in a-Si:H p-i-n Diodes: Use of the Transient Space-Charge-Limited-Current Technique

1995 ◽  
Vol 377 ◽  
Author(s):  
G. J. Adriaenssens ◽  
B. Yan ◽  
A. Eliat
Keyword(s):  
Space Charge ◽  
Conduction Band Edge ◽  
Time Range ◽  
Space Charge Limited Current ◽  
Transport Parameters ◽  
Limited Current ◽  
Emission Time ◽  
Time Regime ◽  
Carrier Extraction ◽  
Space Charge Limited

ABSTRACTA full and detailed transient space-charge-limited current (T-SCLC) study of a-Si:H p-i-n diodes has been carried out in the time range from 108s to 10s. In the short-time regime, general features of T-SCLC such as the current cusp and the carrier extraction period were observed, and related transport parameters were deduced. Electron emission from deep states was studied by measuring the current transients well beyond the extraction time. The emission time is thermally activated at temperatures higher than 250K and levels off at lower temperatures. The high temperature behaviour places the upper edge of the deep states at 0.42–0.52eV below the conduction band edge, and the attempt-to-escape frequency in the range of 1011-1013Hz. An observed shift of emission time with light intensity is attributed to defect relaxation.

Sign in / Sign up

Export Citation Format

Share Document