scholarly journals Ultralow-Power Orbital-Controlled Magnetization Switching Using a Ferromagnetic Oxide Interface

2019 ◽  
Vol 12 (4) ◽  
Author(s):  
Le Duc Anh ◽  
Takashi Yamashita ◽  
Hiroki Yamasaki ◽  
Daisei Araki ◽  
Munetoshi Seki ◽  
...  
Keyword(s):  
Oxide Interface ◽  
Magnetization Switching ◽  
Ultralow Power

scholarly journals Ultralow power spin–orbit torque magnetization switching induced by a non-epitaxial topological insulator on Si substrates

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Nguyen Huynh Duy Khang ◽  
Soichiro Nakano ◽  
Takanori Shirokura ◽  
Yasuyoshi Miyamoto ◽  
Pham Nam Hai
Keyword(s):  
Topological Insulator ◽  
Spin Orbit ◽  
Magnetization Switching ◽  
Si Substrates ◽  
Ultralow Power

Tunable, Ultralow-Power Switching in Memristive Devices Enabled by a Heterogeneous Graphene-Oxide Interface

2014 ◽  
Vol 26 (20) ◽  
pp. 3275-3281 ◽  
Author(s):  
Min Qian ◽  
Yiming Pan ◽  
Fengyuan Liu ◽  
Miao Wang ◽  
Haoliang Shen ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Oxide Interface ◽  
Power Switching ◽  
Ultralow Power

scholarly journals Experimental demonstration of acoustic wave induced magnetization switching in dipole coupled magnetostrictive nanomagnets for ultralow power computing

2016 ◽  
Vol 109 (10) ◽  
pp. 102403 ◽  
Author(s):  
Vimal Sampath ◽  
Noel D'Souza ◽  
Gary M. Atkinson ◽  
Supriyo Bandyopadhyay ◽  
Jayasimha Atulasimha
Keyword(s):  
Acoustic Wave ◽  
Experimental Demonstration ◽  
Magnetization Switching ◽  
Ultralow Power ◽  
Wave Induced

scholarly journals Nonvolatile voltage-controlled magnetization reversal in a spin-valve multiferroic heterostructure

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Mengli Liu ◽  
Wei Du ◽  
Hua Su ◽  
Huaiwu Zhang ◽  
Bo Liu ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Magnetization Reversal ◽  
Coupling Effect ◽  
Spin Valve ◽  
Spin Current ◽  
Free Layer ◽  
Magnetization Switching ◽  
Spintronic Devices ◽  
Ultralow Power ◽  
Multiferroic Heterostructure

AbstractPure voltage-controlled magnetism, rather than a spin current or magnetic field, is the goal for next-generation ultralow power consumption spintronic devices. To advance toward this goal, we report a voltage-controlled nonvolatile 90° magnetization rotation and voltage-assisted 180° magnetization reversal in a spin-valve multiferroic heterostructure. Here, a spin valve with a synthetic antiferromagnetic structure was grown on a (110)-cut Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) substrate, in which only the magnetic moment of the free layer can be manipulated by an electric field (E-field) via the strain-mediated magnetoelectric coupling effect. As a result of selecting a specified PMN-PT substrate with defect dipoles, nonvolatile and stable magnetization switching was achieved by using voltage impulses. Accordingly, a giant, reversible and nonvolatile magnetoresistance modulation was achieved without the assistance of a magnetic field. In addition, by adopting a small voltage impulse, the critical magnetic field required for complete 180° magnetization reversal of the free layer can be tremendously reduced. A magnetoresistance ratio as large as that obtained by a magnetic field or spin current under normal conditions is achieved. These results indicate that E-field-assisted energy-efficient in-plane magnetization switching is a feasible strategy. This work is significant to the development of ultralow-power magnetoresistive memory and spintronic devices.

Interface morphology of thermal oxide grown on polycrystalline silicon by different processes

1992 ◽  
Vol 50 (2) ◽  
pp. 1396-1397
Author(s):  
H. Yen ◽  
E. P. Kvam ◽  
R. Bashir ◽  
S. Venkatesan ◽  
G. W. Neudeck
Keyword(s):  
Integrated Circuits ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Interface Morphology ◽  
Oxide Interface ◽  
Poly Silicon ◽  
Thermal Oxide ◽  
Grain Orientations ◽  
Polycrystalline Silicon Films ◽  
P Type

Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the poly silicon/thermal oxide interface can be severely deleterious due to stresses induced by the volume change during oxidation. Further, grain orientations and grain boundaries may alter oxidation kinetics, which will also affect roughness, and thus stress.Three groups of polycrystalline silicon films were deposited by LPCVD after growing thermal oxide on p-type wafers. The films were doped with phosphorus or arsenic by three different methods.

HREM observation of NiO growth on submicron spheres of pure nickel

1989 ◽  
Vol 47 ◽  
pp. 548-549
Author(s):  
C.M. Teng ◽  
T.F. Kelly ◽  
J.P. Zhang ◽  
H.M. Lin ◽  
Y.W. Kim
Keyword(s):  
Nickel Oxide ◽  
Grain Boundaries ◽  
Pure Nickel ◽  
Submicron Particles ◽  
Crystal Formation ◽  
Nickel Wire ◽  
Liquid Droplets ◽  
Oxide Interface ◽  
Nickel Chromium ◽  
Chromium Alloys

Spherical submicron particles of materials produced by electrohydrodynamic (EHD) atomization have been used to study a variety of materials processes including nucleation of alternative crystallization phases in iron-nickel and nickel-chromium alloys, amorphous solidification in submicron droplets of pure metals, and quasi-crystal formation in nickel-chromium alloys. Some experiments on pure nickel, nickel oxide single crystals, the nickel/nickel(II) oxide interface, and grain boundaries in nickel monoxide have been performed by STEM. For these latter studies, HREM is the most direct approach to obtain particle crystal structures at the atomic level. Grain boundaries in nickel oxide have also been investigated by HREM. In this paper, we present preliminary results of HREM observations of NiO growth on submicron spheres of pure nickel.Small particles of pure nickel were prepared by EHD atomization. For the study of pure nickel, 0.5 mm diameter pure nickel wire (99.9975%) is sprayed directly in the EHD process. The liquid droplets solidify in free-flight through a vacuum chamber operated at about 10-7 torr.

Ultralow-Power and Secure S-Box Circuit Using FinFET Based ECRL Adiabatic Logic

2018 ◽  
Vol 10 (3) ◽  
Author(s):  
K. Srilakshmi ◽  
◽  
A. V. N. Tilak ◽  
K. Srinivasa Rao ◽  
◽  
...  
Keyword(s):  
Adiabatic Logic ◽  
Ultralow Power

Dendritic Growth Failure of a Mesa Diode

1997 ◽  
Author(s):  
P. Singh ◽  
V. Cozzolino ◽  
G. Galyon ◽  
R. Logan ◽  
K. Troccia ◽  
...  
Keyword(s):  
Electric Fields ◽  
Dendritic Growth ◽  
Silicon Oxide ◽  
Impact Ionization ◽  
Electron Tunneling ◽  
Growth Failure ◽  
Side Wall ◽  
Oxide Interface ◽  
Band Bending ◽  
Cross Section Area

Abstract The time delayed failure of a mesa diode is explained on the basis of dendritic growth on the oxide passivated diode side walls. Lead dendrites nucleated at the p+ side Pb-Sn solder metallization and grew towards the n side metallization. The infinitesimal cross section area of the dendrites was not sufficient to allow them to directly affect the electrical behavior of the high voltage power diodes. However, the electric fields associated with the dendrites caused sharp band bending near the silicon-oxide interface leading to electron tunneling across the band gap at velocities high enough to cause impact ionization and ultimately the avalanche breakdown of the diode. Damage was confined to a narrow path on the diode side wall because of the limited influence of the electric field associated with the dendrite. The paper presents experimental details that led to the discovery of the dendrites. The observed failures are explained in the context of classical semiconductor physics and electrochemistry.

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