scholarly journals Asymmetric Magnetization Switching in Perpendicular Magnetic Tunnel Junctions: Role of the Synthetic Antiferromagnet’s Fringe Field

2019 ◽  
Vol 11 (3) ◽  
Author(s):  
M. Lavanant ◽  
P. Vallobra ◽  
S. Petit Watelot ◽  
V. Lomakin ◽  
A.D. Kent ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Fringe Field ◽  
Magnetization Switching

Thermal stability and magnetization switching in perpendicular magnetic tunnel junctions

2020 ◽  
Vol 116 (19) ◽  
pp. 192408 ◽  
Author(s):  
I. Volvach ◽  
J. G. Alzate ◽  
Y.-J. Chen ◽  
A. J. Smith ◽  
D. L. Kencke ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetization Switching

Periodic Fluctuations of Switching Probability in Spin-Transfer Magnetization Switching in Magnetic Tunnel Junctions

2018 ◽  
Vol 54 (9) ◽  
pp. 1-5
Author(s):  
Daisuke Saida ◽  
Yuma Jibiki ◽  
Masayuki Takagishi ◽  
Tadaomi Daibou ◽  
Saori Kashiwada ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Transfer ◽  
Magnetization Switching ◽  
Periodic Fluctuations

Role of Metal-Oxide Interface in Determining the Spin Polarization of Magnetic Tunnel Junctions

Science ◽  
1999 ◽  
Vol 286 (5439) ◽  
pp. 507-509 ◽  
Author(s):  
Jose Maria De Teresa ◽  
Agnès Barthélémy ◽  
Albert Fert ◽  
Jean Pierre Contour ◽  
François Montaigne ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Metal Oxide ◽  
Spin Polarization ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Ferromagnetic Transition ◽  
Oxide Interface ◽  
Oxide Interfaces ◽  
Structure Of Metal

The role of the metal-oxide interface in determining the spin polarization of electrons tunneling from or into ferromagnetic transition metals in magnetic tunnel junctions is reported. The spin polarization of cobalt in tunnel junctions with an alumina barrier is positive, but it is negative when the barrier is strontium titanate or cerium lanthanite. The results are ascribed to bonding effects at the transition metal–barrier interface. The influence of the electronic structure of metal-oxide interfaces on the spin polarization raises interesting fundamental problems and opens new ways to optimize the magnetoresistance of tunnel junctions.

Magnetization switching of NiFeSiB free layers for magnetic tunnel junctions

2006 ◽  
Vol 304 (1) ◽  
pp. e258-e260 ◽  
Author(s):  
B.S. Chun ◽  
S.P. Ko ◽  
B.S. Oh ◽  
J.Y. Hwang ◽  
J.R. Rhee ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetization Switching

Low-resistive monocrystalline Mg-Al-O barrier magnetic tunnel junctions for spin-transfer magnetization switching

2013 ◽  
Vol 103 (14) ◽  
pp. 142409 ◽  
Author(s):  
Hiroaki Sukegawa ◽  
Seiji Mitani ◽  
Tadakatsu Ohkubo ◽  
Koichiro Inomata ◽  
Kazuhiro Hono
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Transfer ◽  
Magnetization Switching
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