scholarly journals Optical Excitation of Single- and Multimode Magnetization Precession in Fe - Ga Nanolayers

2019 ◽  
Vol 11 (3) ◽  
Author(s):  
A.V. Scherbakov ◽  
A.P. Danilov ◽  
F. Godejohann ◽  
T.L. Linnik ◽  
B.A. Glavin ◽  
...  
Keyword(s):  
Optical Excitation ◽  
Magnetization Precession

Control of coherent magnetization precession in GaMnAs by ultrafast optical excitation

2008 ◽  
Vol 5 (8) ◽  
pp. 2637-2640 ◽  
Author(s):  
J. Qi ◽  
Y. Xu ◽  
X. Liu ◽  
J. K. Furdyna ◽  
I. E. Perakis ◽  
...  
Keyword(s):  
Optical Excitation ◽  
Ultrafast Optical ◽  
Magnetization Precession

scholarly journals Ultrafast Modulation of Magnetization Dynamics in Ferromagnetic (Ga, Mn)As Thin Films

2018 ◽  
Vol 8 (10) ◽  
pp. 1880 ◽  
Author(s):  
Hang Li ◽  
Xinhui Zhang ◽  
Xinyu Liu ◽  
Margaret Dobrowolska ◽  
Jacek Furdyna
Keyword(s):  
Magnetic Anisotropy ◽  
Spin Dynamics ◽  
Optical Excitation ◽  
Laser Pulses ◽  
Time Resolved ◽  
Ultrafast Optical ◽  
Optical Effects ◽  
Out Of Plane ◽  
Linearly Polarized ◽  
Magnetization Precession

Magnetization precession induced by linearly polarized optical excitation in ferromagnetic (Ga,Mn)As was studied by time-resolved magneto-optical Kerr effect measurements. The superposition of thermal and non-thermal effects arising from the laser pulses complicates the analysis of magnetization precession in terms of magnetic anisotropy fields. To obtain insight into these processes, we investigated compressively-strained thin (Ga,Mn)As films using ultrafast optical excitation above the band gap as a function of pulse intensity. Data analyses with the gyromagnetic calculation based on Landau-Lifshitz-Gilbert equation combined with two different magneto-optical effects shows the non-equivalent effects of in-plane and out-of-plane magnetic anisotropy fields on both the amplitude and the frequency of magnetization precession, thus providing a handle for separating the effects of non-thermal and thermal processes in this context. Our results show that the effect of photo-generated carriers on magnetic anisotropy constitutes a particularly effective mechanism for controlling both the frequency and amplitude of magnetization precession, thus suggesting the possibility of non-thermal manipulation of spin dynamics through pulsed laser excitations.

Control of coherent magnetization precession in GaMnAs by ultrafast optical excitation

2007 ◽  
Author(s):  
J. Qi ◽  
Y. Xu ◽  
X. Liu ◽  
J. K. Furdyna ◽  
I. E. Perakis ◽  
...  
Keyword(s):  
Optical Excitation ◽  
Ultrafast Optical ◽  
Magnetization Precession

scholarly journals Coherent magnetization precession in GaMnAs induced by ultrafast optical excitation

2007 ◽  
Vol 91 (11) ◽  
pp. 112506 ◽  
Author(s):  
J. Qi ◽  
Y. Xu ◽  
N. H. Tolk ◽  
X. Liu ◽  
J. K. Furdyna ◽  
...  
Keyword(s):  
Optical Excitation ◽  
Ultrafast Optical ◽  
Magnetization Precession

LOW ENERGY OPTICAL EXCITATION IN CeB6

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-737-C8-738
Author(s):  
Y. S. Kwon ◽  
S. Kimura ◽  
T. Nanba ◽  
S. Kunii ◽  
M. Ikezawa ◽  
...  
Keyword(s):  
Optical Excitation ◽  
Low Energy

Anti-Stokes Luminescence of Bulk and Thin-Film β-InSe under Infrared Optical Excitation

JETP Letters ◽  
2020 ◽  
Vol 112 (3) ◽  
pp. 145-149
Author(s):  
S. N. Nikolaev ◽  
M. A. Chernopitsskii ◽  
V. S. Bagaev ◽  
V. S. Krivobok
Keyword(s):  
Thin Film ◽  
Optical Excitation ◽  
Anti Stokes

Semiconductors

2018 ◽  
Author(s):  
L. Solymar ◽  
D. Walsh ◽  
R. R. A. Syms
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Vapour Deposition ◽  
Energy Levels ◽  
Chemical Vapour ◽  
Optical Excitation ◽  
Organic Chemical ◽  
Metal Organic ◽  
Mathematical Relations ◽  
Semiconductor Properties

Both intrinsic and extrinsic semiconductors are discussed in terms of their band structure. The acceptor and donor energy levels are introduced. Scattering is discussed, from which the conductivity of semiconductors is derived. Some mathematical relations between electron and hole densities are derived. The mobilities of III–V and II–VI compounds and their dependence on impurity concentrations are discussed. Band structures of real and idealized semiconductors are contrasted. Measurements of semiconductor properties are reviewed. Various possibilities for optical excitation of electrons are discussed. The technology of crystal growth and purification are reviewed, in particular, molecular beam epitaxy and metal-organic chemical vapour deposition.

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