scholarly journals Wide Frequency Tuning of Continuous Terahertz Wave Generated by Difference Frequency Mixing under Exciton-Excitation Conditions in a GaAs / AlAs Multiple Quantum Well

2018 ◽  
Vol 10 (4) ◽  
Author(s):  
Osamu Kojima ◽  
Yuki Tarui ◽  
Hideaki Shimazu ◽  
Takashi Kita ◽  
Avan Majeed ◽  
...  
Keyword(s):  
Quantum Well ◽  
Frequency Tuning ◽  
Multiple Quantum Well ◽  
Terahertz Wave ◽  
Difference Frequency ◽  
Multiple Quantum ◽  
Exciton Excitation ◽  
Excitation Conditions ◽  
Frequency Mixing

TRANSITION FROM BIEXCITONS TO ELECTRON-HOLE PLASMA IN PHOTOLUMINESCENCE PROPERTIES OF A GaAs/AlAs MULTIPLE-QUANTUM-WELL STRUCTURE

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3793-3796 ◽  
Author(s):  
H. ICHIDA ◽  
K. TSUJI ◽  
K. MIZOGUCHI ◽  
H. NISHIMURA ◽  
M. NAKAYAMA
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Excitation Power ◽  
Multiple Quantum ◽  
Electron Hole ◽  
Hole Plasma ◽  
Quantum Well Structure ◽  
Electron Hole Plasma ◽  
Biexciton Binding Energy ◽  
Excitation Conditions

We report photoluminescence (PL) properties under various excitation-power conditions in a GaAs (15.0 nm)/AlAs(15.0 nm) multiple-quantum-well structure. we have clearly observed the PL bands from the biexciton and electron-hole plasma, and estimated the biexciton binding energy and the band-gap renormalization in the electron-hole plasma. The spectral change of the PL bands as a function of the excitation power demonstrates the transition from the biexciton to the electron-hole plasma under intense excitation conditions.

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

Sign in / Sign up

Export Citation Format

Share Document