scholarly journals Surface characterization of nitrogen-doped high purity niobium coupons compared with superconducting rf cavity performance

2019 ◽  
Vol 22 (12) ◽  
Author(s):  
Pashupati Dhakal ◽  
Gianluigi Ciovati ◽  
Uttar Pudasaini ◽  
Santosh Chetri ◽  
Shreyas Balachandran ◽  
...  
Keyword(s):  
High Purity ◽  
Surface Characterization ◽  
Nitrogen Doped ◽  
Rf Cavity ◽  
Superconducting Rf

scholarly journals Surface characterization of nitrogen-doped Nb (100) large-grain superconducting RF cavity material

2018 ◽  
Vol 53 (14) ◽  
pp. 10411-10422 ◽  
Author(s):  
Arti Dangwal Pandey ◽  
Guilherme Dalla Lana Semione ◽  
Alena Prudnikava ◽  
Thomas F. Keller ◽  
Heshmat Noei ◽  
...  
Keyword(s):  
Surface Characterization ◽  
Nitrogen Doped ◽  
Rf Cavity ◽  
Superconducting Rf

scholarly journals Surface characterization of Nb samples electropolished with real superconducting rf accelerator cavities

2010 ◽  
Vol 13 (12) ◽  
Author(s):  
Xin Zhao ◽  
Rong-Li Geng ◽  
P. V. Tyagi ◽  
Hitoshi Hayano ◽  
Shigeki Kato ◽  
...  
Keyword(s):  
Surface Characterization ◽  
Superconducting Rf

scholarly journals Analysis of RF losses and material characterization of samples removed from a Nb3Sn-coated superconducting RF cavity

2020 ◽  
Vol 33 (4) ◽  
pp. 045012 ◽  
Author(s):  
Uttar Pudasaini ◽  
Grigory V Eremeev ◽  
Charles E Reece ◽  
James Tuggle ◽  
Michael J Kelley
Keyword(s):  
Material Characterization ◽  
Rf Cavity ◽  
Superconducting Rf

Surface Characterization of High Purity Niobium Electropolished with an Ionic Liquid

2019 ◽  
Vol 33 (7) ◽  
pp. 571-574 ◽  
Author(s):  
Tarek M. Abdel-Fattah ◽  
Roy Crooks
Keyword(s):  
Ionic Liquid ◽  
High Purity ◽  
Surface Characterization

The Use of Advanced Analytical Techniques for Characterization of the Chemical, Physical, and Crystallographic Nature of a Surface

1973 ◽  
Vol 31 ◽  
pp. 132-133 ◽  
Author(s):  
R. E. Herfert
Keyword(s):  
Surface Characterization ◽  
Analytical Techniques ◽  
X Ray Diffraction ◽  
Depth Of Penetration ◽  
X Ray ◽  
The Past ◽  
Transmission Electron ◽  
Scanning Electron

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

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