Muonic-molecule formation in a high-density D-T system: Application to a solid phase

1993 ◽  
Vol 48 (6) ◽  
pp. 4130-4141 ◽  
Author(s):  
Kenji Fukushima
Keyword(s):  
System Application ◽  
Solid Phase ◽  
High Density ◽  
Muonic Molecule ◽  
Molecule Formation ◽  
T System

Properties of high density LaB6cathode prepared by spark plasma solid phase sintering

2010 ◽  
Vol 22 (1) ◽  
pp. 171-175 ◽  
Author(s):  
周身林 Zhou Shenlin ◽  
张久兴 Zhang Jiuxing ◽  
刘丹敏 Liu Danmin
Keyword(s):  
Solid Phase ◽  
High Density ◽  
Spark Plasma

Molecule formation and energy transfer processes in a vapor with high density of 3P-excited sodium atoms

1977 ◽  
Vol 22 (3) ◽  
pp. 329-332 ◽  
Author(s):  
M. Allegrini ◽  
G. Alzetta ◽  
A. Kopystynska ◽  
L. Moi ◽  
G. Orriols
Keyword(s):  
Energy Transfer ◽  
High Density ◽  
Transfer Processes ◽  
Molecule Formation ◽  
Sodium Atoms

Structure and properties of high-density polyethylene prepared by solid-phase extrusion

1986 ◽  
Vol 28 (11) ◽  
pp. 2668-2674
Author(s):  
A.N. Kryuchkov ◽  
O.V. Shatalova ◽  
E.V. Prut ◽  
L.L. Razumova ◽  
D.P. Shashkin ◽  
...  
Keyword(s):  
High Density Polyethylene ◽  
Solid Phase ◽  
High Density ◽  
Structure And Properties

Preferential crystal growth of germanium by solid phase crystallization

2014 ◽  
Vol 92 (7/8) ◽  
pp. 576-581 ◽  
Author(s):  
Mikuri Kanai ◽  
Yuji Kojima ◽  
Masao Isomura
Keyword(s):  
Crystalline Silicon ◽  
Solid Phase ◽  
Electron Beam Evaporation ◽  
High Density ◽  
Solid Phase Crystallization ◽  
Air Exposure ◽  
Preferential Growth ◽  
Practical Applications ◽  
Si Substrates ◽  
P Type

We have investigated the preparation of crystalline germanium films by the solid phase crystallization (SPC) of amorphous germanium (a-Ge) precursor on single crystalline silicon substrates. The a-Ge precursor easily incorporates the impurities from the surface exposed to the air, and the impurities affect the crystallinity after the SPC. In the a-Ge precursor prepared by Knudsen-cell evaporation, the preferential crystalline growth following the Si substrates is disturbed by the high density of impurities and the random crystalline structures are formed. The a-Ge precursors prepared by electron beam evaporation have high impurity concentrations only near the surface because the impurity diffusion is slow because of the relatively high density. The preferential growth is successfully obtained in a-Ge precursor prepared on n-type Si substrates, although the random crystallization is slightly observed on p-type Si substrates. By sufficiently reducing the impurity concentrations by avoiding the air exposure, the preferential growth can be promoted on p-type Si substrates. The impurity incorporation because of the air exposure is sufficiently reduced for the preferential growth by covering a-Ge with a-Si blocking layers. This method is effective for future practical applications of SPC Ge films.

Quadrupole corrections to matrix elements of transitions in resonant reactions of muonic molecule formation

1996 ◽  
Vol 101-102 (1) ◽  
pp. 179-189 ◽  
Author(s):  
M. P. Faifman ◽  
T. A. Strizh ◽  
E. A. G. Armour ◽  
M. R. Harston
Keyword(s):  
Matrix Elements ◽  
Muonic Molecule ◽  
Molecule Formation
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