Statistical properties of the quantized energy spectrum of a Hamiltonian system with classically regular and chaotic trajectories: A numerical study of level-spacing distributions for two-dimensional coupled Morse-oscillator systems

1985 ◽  
Vol 32 (1) ◽  
pp. 538-551 ◽  
Author(s):  
Toshitaka Terasaka ◽  
Toshiki Matsushita
Keyword(s):  
Energy Spectrum ◽  
Hamiltonian System ◽  
Numerical Study ◽  
Statistical Properties ◽  
Two Dimensional ◽  
Morse Oscillator ◽  
Level Spacing

Numerical Study on Two-dimensional Magnetic Photonic Crystals Made of Magnetized Ferrites

PIERS Online ◽  
2007 ◽  
Vol 3 (3) ◽  
pp. 305-307 ◽  
Author(s):  
Jie Xu ◽  
Ping Chen ◽  
Yue Shi ◽  
Xin-Yi Ji ◽  
Ai-Min Jiang ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Numerical Study ◽  
Two Dimensional ◽  
Magnetic Photonic Crystals

Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.

2017 ◽  
Author(s):  
Varun Bheemireddy
Keyword(s):  
Space Charge ◽  
High Performance ◽  
Numerical Study ◽  
2D Materials ◽  
Space Charge Density ◽  
Two Dimensional ◽  
Short Channel ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
New Family

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>

Peculiarities of Stark-phonon Resonance in Two-dimensional Superlattices with Non-additive Energy Spectrum

2016 ◽  
Vol 8 (1) ◽  
pp. 01019-1-01019-3
Author(s):  
D. V. Zav’yalov ◽  
◽  
S. V. Kruchkov ◽  
E. S. Ionkina ◽  
◽  
...  
Keyword(s):  
Energy Spectrum ◽  
Two Dimensional ◽  
Additive Energy

scholarly journals Optical Thouless conductance and level-spacing statistics in two-dimensional Anderson localizing systems

2019 ◽  
Vol 100 (6) ◽  
Author(s):  
Sandip Mondal ◽  
Randhir Kumar ◽  
Martin Kamp ◽  
Sushil Mujumdar
Keyword(s):  
Two Dimensional ◽  
Level Spacing

Specific heat of ordered and isotopically disordered lattices

1978 ◽  
Vol 56 (10) ◽  
pp. 1390-1394
Author(s):  
K. P. Srivastava
Keyword(s):  
Specific Heat ◽  
Low Temperatures ◽  
Numerical Study ◽  
Three Dimensional ◽  
Constant Volume ◽  
Nearest Neighbour ◽  
Two Dimensional ◽  
Appreciable Difference ◽  
Substantial Change ◽  
Neighbour Interaction

An extensive numerical study on specific heat at constant volume (Cv) for ordered and isotopically disordered lattices has been made. Cv at various temperatures for ordered and disordered linear and two-dimensional lattices have been compared and no appreciable difference in Cv between these two structures has been observed. Effect of concentration of light atoms on Cv for three-dimensional isotopically disordered lattices has also been shown.In spite of taking next-nearest-neighbour interaction into account, no substantial change in Cv between the ordered and isotopically disordered linear lattices has been found. It is shown that the low lying modes contribute substantially at low temperatures.

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