Thermoelectric Power of Germanium at Low Temperatures

1955 ◽  
Vol 97 (6) ◽  
pp. 1721-1722 ◽  
Author(s):  
E. Mooser ◽  
S. B. Woods
Carbon ◽  
1969 ◽  
Vol 7 (6) ◽  
pp. 735
Author(s):  
T Tsuzuku ◽  
T Takezawa ◽  
A Ono

2015 ◽  
Vol 29 (27) ◽  
pp. 1550189
Author(s):  
Q. R. Hou ◽  
B. F. Gu ◽  
Y. B. Chen

In this paper, we report a large enhancement in the thermoelectric power factor in CrSi2 film via Si:B (1 at.% B content) addition. The Si:B-enriched CrSi2 films are prepared by co-sputtering CrSi2 and heavily B-doped Si targets. Both X-ray diffraction patterns and Raman spectra confirm the formation of the crystalline phase CrSi2. Raman spectra also indicate the crystallization of the added Si:B. With the addition of Si:B, the electrical resistivity [Formula: see text] decreases especially at low temperatures while the Seebeck coefficient [Formula: see text] increases above 533 K. As a result, the thermoelectric power factor, [Formula: see text], is greatly enhanced and can reach [Formula: see text] at 583 K, which is much larger than that of the pure CrSi2 film.


2017 ◽  
Vol 23 (3) ◽  
pp. 257 ◽  
Author(s):  
Katsuhiko Nishimura ◽  
Takahiro Namiki ◽  
Tsuyoshi Ikeno ◽  
Yuichi Yamamoto ◽  
Wayne D. Hutchison

<p class="AMSmaintext1"><span lang="EN-GB">Magnetic and transport properties of cold rolled SUS304 stainless steels were investigated via measurements of X-ray diffraction, magnetization, thermoelectric power (TEP), thermal conductivity and electrical resistivity from 300 K down to low temperatures.   Saturation magnetizations at 300 K were 1.6, 37.5, 72.6 and 105.6 emu/g for rolled thickness reduction ratios of 0, 33, 50 and 75%, respectively.  The thermoelectric power (TEP) values at 300 K were found to be -1.3, -0.4, 1.6 and 2.9 </span><span lang="EN-GB">m</span><span lang="EN-GB">V/K for the reduction ratios of 0, 33, 50 and 75%, respectively.  Least-squares fits of the experimental data predicted a saturation magnetization of 141 emu/g and a thermoelectric power of 4.3 </span><span lang="EN-GB">m</span><span lang="EN-GB">V/K for SUS304 in the martensite phase at 300 K.</span></p>


2011 ◽  
Vol 25 (22) ◽  
pp. 1829-1838 ◽  
Author(s):  
Q. R. HOU ◽  
B. F. GU ◽  
Y. B. CHEN ◽  
Y. J. HE

Phonon-drag effect usually occurs in single crystals at very low temperatures (10–200 K). Strong phonon-drag effect is observed in ultra-thin β- FeSi 2 films at around room temperature. The Seebeck coefficient of a 23 nm-thick β- FeSi 2 film can reach -1.375 mV/K at 343 K. However, the thermoelectric power factor of the film is still small, only 0.42×10-3 W/m-K2, due to its large electrical resistivity. When a 27 nm-thick MnSi 1.7 film with low electrical resistivity is grown on it, the thermoelectric power factor of the MnSi 1.7 film can reach 1.5×10-3 W/m-K2 at around room temperature. This value is larger than that of bulk MnSi 1.7 material in the same temperature range.


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