The Emission of Secondary Electrons Under High Energy Positive Ion Bombardment

1939 ◽  
Vol 55 (5) ◽  
pp. 463-470 ◽  
Author(s):  
A. G. Hill ◽  
W. W. Buechner ◽  
J. S. Clark ◽  
J. B. Fisk
Keyword(s):  
Ion Bombardment ◽  
High Energy ◽  
Secondary Electrons ◽  
Positive Ion

Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

Analysis of Voltage Contrast in Secondary Electron Images Using a High-Energy Electron Spectrometer

2019 ◽  
Author(s):  
Natsuko Asano ◽  
Shunsuke Asahina ◽  
Natasha Erdman
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Sample Surface ◽  
High Energy ◽  
Secondary Electrons ◽  
Analysis Technique ◽  
Quantitative Understanding ◽  
Voltage Contrast ◽  
Acceleration Voltage ◽  
Failure Localization

Abstract Voltage contrast (VC) observation using a scanning electron microscope (SEM) or a focused ion beam (FIB) is a common failure analysis technique for semiconductor devices.[1] The VC information allows understanding of failure localization issues. In general, VC images are acquired using secondary electrons (SEs) from a sample surface at an acceleration voltage of 0.8–2.0 kV in SEM. In this study, we aimed to find an optimized electron energy range for VC acquisition using Auger electron spectroscopy (AES) for quantitative understanding.

Positive ion fractions of recoiled A1 and O from O-adsorbed Al surfaces by low-energy ion bombardment

1994 ◽  
Vol 319 (3) ◽  
pp. 353-362 ◽  
Author(s):  
T. Hashimoto ◽  
J. Murakami ◽  
I. Kusunoki
Keyword(s):  
Ion Bombardment ◽  
Low Energy ◽  
Positive Ion

MAXIMUM SECONDARY ELECTRON YIELDS FROM SEMICONDUCTORS AND INSULATORS

2016 ◽  
Vol 24 (04) ◽  
pp. 1750045 ◽  
Author(s):  
A. G. XIE ◽  
Z. H. LIU ◽  
Y. Q. XIA ◽  
M. M. ZHU
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Maximum Yield ◽  
Secondary Electron Emission ◽  
High Energy ◽  
Secondary Electrons ◽  
Backscattered Electrons ◽  
Universal Formula ◽  
Yield Formula ◽  
Primary Electrons

Based on the processes and characteristics of secondary electron emission and the formula for the yield due to primary electrons hitting on semiconductors and insulators, the universal formula for maximum yield [Formula: see text] due to primary electrons hitting on semiconductors and insulators was deduced, where [Formula: see text] is the maximum ratio of the number of secondary electrons produced by primary electrons to the number of primary electrons. On the basis of the formulae for primary range in different energy ranges of [Formula: see text], characteristics of secondary electron emission and the deduced universal formula for [Formula: see text], the formulae for [Formula: see text] in different energy ranges of [Formula: see text] were deduced, where [Formula: see text] is the primary incident energy at which secondary electron yields from semiconductors and insulators, [Formula: see text], are maximized to maximum secondary electron yields from semiconductors and insulators, [Formula: see text]; and [Formula: see text] is the maximum ratio of the number of total secondary electrons produced by primary electrons and backscattered electrons to the number of primary electrons. According to the deduced formulae for [Formula: see text], the relationship among [Formula: see text], [Formula: see text] and high-energy back-scattering coefficient [Formula: see text], the formulae for parameters of [Formula: see text] and the experimental data as well as the formulae for [Formula: see text] in different energy ranges of [Formula: see text] as a function of [Formula: see text], [Formula: see text], [Formula: see text] and [Formula: see text] were deduced, where [Formula: see text] and [Formula: see text] are the original electron affinity and the width of forbidden band, respectively. The scattering of [Formula: see text] was analyzed, and calculated [Formula: see text] values were compared with the values measured experimentally. It was concluded that the deduced formulae for [Formula: see text] were found to be universal for [Formula: see text].

Two contributions to the ratio of the mean secondary electron generation of backscattered electrons to primary electrons at high electron energy

2014 ◽  
Vol 28 (06) ◽  
pp. 1450046 ◽  
Author(s):  
Ai-Gen Xie ◽  
Chen-Yi Zhang ◽  
Kun Zhong
Keyword(s):  
Atomic Number ◽  
Secondary Electron ◽  
High Energy ◽  
Primary Electron ◽  
Experimental Results ◽  
High Electron ◽  
Secondary Electrons ◽  
Backscattered Electrons ◽  
The Mean ◽  
Primary Electrons

Based on the main physical processes of secondary electron emission, experimental results and the characteristics of backscattered electrons (BE), the formula was derived for describing the ratio (β angle ) of the number of secondary electrons excited by the larger average angle of emission BE to the number of secondary electrons excited by the primary electrons of normal incidence. This ratio was compared to the similar ratio β obtained in the case of high energy primary electrons. According to the derived formula for β angle and the two reasons why β > 1, the formula describing the ratio β energy of β to β angle , reflecting the effect that the mean energy of the BE W AV p0 is smaller than the energy of the primary electrons at the surface, was derived. β angle and β energy computed using the experimental results and the deduced formulae for β angle and β energy were analyzed. It is concluded that β angle is not dependent on atomic number z, and that β energy decreases slowly with z. On the basis of the two reasons why β > 1, the definitions of β and β energy and the number of secondary electrons released per primary electron, the formula for β E-energy (the estimated β energy ) was deduced. The β E-energy computed using W AV p0, energy exponent and the formula for β E-energy is in a good agreement with β energy computed using the experimental results and the deduced formula for β energy . Finally, it is concluded that the deduced formulae for β angle and β energy can be used to estimate β angle and β energy , and that the factor that W AV p0 increases slowly with atomic number z leads to the results that β energy decreases slowly with z and β decreases slowly with z.

Quantitative Microprobe Analysis by Means of Target Current Measurements*

1966 ◽  
Vol 10 ◽  
pp. 447-461 ◽  
Author(s):  
J. W. Colby ◽  
W. N. Wise ◽  
D. K. Conley
Keyword(s):  
Binary Systems ◽  
Secondary Electron ◽  
Surface Condition ◽  
Energy Levels ◽  
Target Material ◽  
High Energy ◽  
Secondary Electrons ◽  
Secondary Electron Yield ◽  
Electron Yield ◽  
Electron Backscatter

AbstractIn the microprobe analyzer, a portion of the high energy electrons impinging on the surface are backscattered from the sample and re-emitted at high energy levels. Low energy (less than 50 eV) or secondary electrons also ate emitted. Both the electron backscatter yield and the secondary electron yield are related to the mean atomic number of the target material and, hence, may be used to provide information about the target composition. Unfortunately, however, the secondary electron yield is very sensitive to the surface condition of the specimen and various instrument parameters. This complicates the otherwise simple linear relationship between sample composition and electron backscatter yield.It is shown that the effects due to secondary electrons can be minimized by biasing the sample, and that good results can be obtained in the analysis of binary systems. The limitations and utility of the method are discussed, and backscatter yields are determined.

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