Absolute Values of the Electron Drift Velocity in Nitrogen, Helium, Neon and Argon

1936 ◽  
Vol 50 (10) ◽  
pp. 950-954 ◽  
Author(s):  
Russell A. Nielsen
Keyword(s):  
Drift Velocity ◽  
Electron Drift Velocity ◽  
Electron Drift ◽  
Helium Neon

scholarly journals Electron Swarm Transport Through Low Pressure Noble Gases

1992 ◽  
Vol 45 (2) ◽  
pp. 185 ◽  
Author(s):  
G Dall’Armi ◽  
KL Brown ◽  
PH Purdie ◽  
J Fletcher
Keyword(s):  
Diffusion Coefficient ◽  
Drift Velocity ◽  
Noble Gases ◽  
Electron Drift Velocity ◽  
Current Work ◽  
Electron Drift ◽  
Longitudinal Diffusion ◽  
Transient Technique ◽  
Voltage Transient ◽  
Helium Neon

The electron drift velocity, the longitudinal diffusion coefficient and the electron ionisation coefficient have been measured in helium, neon, argon and krypton using the integrated voltage transient technique. Whilst the present data agree substantially with previous determinations at those values of E / N at which they overlap, the current work represents a marked extension of the range of E/N covered for We and NDL in most of the gases investigated.

Electron drift velocity versus electric field in GaAs

1986 ◽  
Vol 29 (12) ◽  
pp. 1295-1296 ◽  
Author(s):  
Chian S. Chang ◽  
Harold R. Fetterman
Keyword(s):  
Electric Field ◽  
Drift Velocity ◽  
Electron Drift Velocity ◽  
Velocity Versus ◽  
Electron Drift

Electron Drift-Velocity Detector for Gas Chromatography.

1964 ◽  
Vol 36 (9) ◽  
pp. 1739-1744 ◽  
Author(s):  
V. N. Smith ◽  
J. F. Fidiam
Keyword(s):  
Gas Chromatography ◽  
Drift Velocity ◽  
Electron Drift Velocity ◽  
Electron Drift

scholarly journals Увеличение насыщенной скорости дрейфа электронов в pHEMT-гетероструктурах с донорно-акцепторным легированием

2018 ◽  
Vol 44 (6) ◽  
pp. 77
Author(s):  
Д.Ю. Протасов ◽  
Д.В. Гуляев ◽  
А.К. Бакаров ◽  
А.И. Торопов ◽  
Е.В. Ерофеев ◽  
...  
Keyword(s):  
Drift Velocity ◽  
High Electron Mobility Transistor ◽  
Real Space ◽  
Electron Drift Velocity ◽  
Hot Electrons ◽  
Electron Drift ◽  
High Electron ◽  
High Electron Mobility ◽  
Donor Acceptor ◽  
Real Space Transfer

AbstractField dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor–acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth increased by 0.8–0.9 eV with the aid of acceptor layers have been studied by a pulsed technique. It is established that the saturated electron-drift velocity in DA-pHEMT-HESs is 1.2–1.3 times greater than that in the usual pHEMT-HESs. The electroluminescence (EL) spectra of DA-pHEMT-HESs do not contain emission bands related to the recombination in widebandgap layers (QW barriers). The EL intensity in these HESs is not saturated with increasing electric field. This is indicative of a suppressed real-space transfer of hot electrons from QW to barrier layers, which accounts for the observed increase in the saturated electron-drift velocity.

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