Pair Spectra and "Edge Emission" in Zinc Selenide

P. J. Dean; J. L. Merz

doi:10.1103/physrev.178.1310

Pair Spectra and "Edge Emission" in Zinc Selenide

Physical Review ◽

10.1103/physrev.178.1310 ◽

1969 ◽

Vol 178 (3) ◽

pp. 1310-1318 ◽

Cited By ~ 183

Author(s):

P. J. Dean ◽

J. L. Merz

Keyword(s):

Zinc Selenide ◽

Edge Emission

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Diffusion layers of zinc selenide with a predominant edge emission

Ukrainian Journal of Physical Optics ◽

10.3116/16091833/10/4/206/2009 ◽

2009 ◽

Vol 10 (4) ◽

pp. 206

Author(s):

V Makhniy ◽

M Slyotov ◽

I Tkachenko ◽

A Slyotov ◽

P Horley ◽

...

Keyword(s):

Zinc Selenide ◽

Edge Emission ◽

Diffusion Layers

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Edge emission in zinc selenide

Journal of Luminescence ◽

10.1016/0022-2313(75)90075-7 ◽

1975 ◽

Vol 10 (4) ◽

pp. 267-272 ◽

Cited By ~ 11

Author(s):

S. Gezci ◽

J. Woods

Keyword(s):

Zinc Selenide ◽

Edge Emission

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Edge Emission in Zinc Selenide Single Crystals

Journal of Applied Physics ◽

10.1063/1.1777053 ◽

1961 ◽

Vol 32 (10) ◽

pp. 2250-2254 ◽

Cited By ~ 31

Author(s):

D. C. Reynolds ◽

L. S. Pedrotti ◽

O. W. Larson

Keyword(s):

Single Crystals ◽

Zinc Selenide ◽

Edge Emission

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Anomalous Edge Emission from Zinc Selenide Heavily Doped with Oxygen

Semiconductors ◽

10.1134/s1063782620010169 ◽

2020 ◽

Vol 54 (1) ◽

pp. 102-107

Author(s):

N. K. Morozova ◽

I. N. Miroshnikova

Keyword(s):

Zinc Selenide ◽

Edge Emission ◽

Heavily Doped

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"PURIFICATION EFFECTS" IN ZINC SELENIDE CRYSTALS DOPED WITH YTTERBIUM FROM VAPOR PHASE

Telecommunications and Radio Engineering ◽

10.1615/telecomradeng.v75.i3.90 ◽

2016 ◽

Vol 75 (3) ◽

pp. 279-284 ◽

Cited By ~ 2

Author(s):

V. P. Makhniy ◽

O. V. Kinzersky ◽

I. M. Senko

Keyword(s):

Zinc Selenide ◽

Vapor Phase

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Synthesis and characterization of europium doped zinc selenide thin films prepared by photo-assisted chemical bath technique for luminescence application

Materials Chemistry and Physics ◽

10.1016/j.matchemphys.2021.124303 ◽

2021 ◽

Vol 262 ◽

pp. 124303

Author(s):

D.D. Hile ◽

H.C. Swart ◽

S.V. Motloung ◽

T.E. Motaung ◽

R.E. Kroon ◽

...

Keyword(s):

Thin Films ◽

Zinc Selenide ◽

Synthesis And Characterization

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Light Emission Properties of GaN-Based Double Heterostructures and Quantum Wells

MRS Proceedings ◽

10.1557/proc-395-949 ◽

1995 ◽

Vol 395 ◽

Cited By ~ 2

Author(s):

D.A.S. Loeber ◽

J.M. Redwing ◽

N.G. Anderson ◽

M.A. Tischler

Keyword(s):

Quantum Well ◽

Quantum Wells ◽

Stimulated Emission ◽

Pump Light ◽

Band Edge Emission ◽

Emission Characteristics ◽

Nitrogen Laser ◽

Edge Emission ◽

Edge Luminescence ◽

Double Heterostructures

ABSTRACTEdge emission characteristics of optically pumped GaN-AlGaN double heterostructures and quantum wells are examined. The samples, which were grown by metalorganic vapor phase epitaxy, are photoexcited with light from a pulsed nitrogen laser. The pump light is focused to a narrow stripe on the sample surface, oriented perpendicular to a cleaved edge, and the edge luminescence is collected and analyzed. We first compare emission characteristics of highly excited GaN-AlGaN double heterostructures grown simultaneously on SiC and sapphire substrates. Polarization resolved spectral properties of edge luminescence from both structures is studied as a function of pump intensity and excitation stripe length. Characteristics indicative of stimulated emission are observed, particularly in the sample grown on SiC. We then present results demonstrating laser emission from a GaN-AlGaN separate-confinement quantum-well heterostructure. At high pump intensities, band edge emission from the quantum well exhibits five narrow (∼1 Å) modes which are evenly spaced by 10Å to within the resolution of the spectrometer. This represents the first demonstration of laser action in a GaN-based quantum-well structure.

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