Polarization of Slow Electrons by Hg and Range of Applicability of the Relativistic Hartree Potential

1967 ◽  
Vol 159 (1) ◽  
pp. 47-49 ◽  
Author(s):  
W. Eitel ◽  
K. Jost ◽  
J. Kessler
Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1581
Author(s):  
José C. Conesa

Two DFT-based methods using hybrid functionals and plane-averaged profiles of the Hartree potential (individual slabs versus vacuum and alternating slabs of both materials), which are frequently used to predict or estimate the offset between bands at interfaces between two semiconductors, are analyzed in the present work. These methods are compared using several very different semiconductor pairs, and the conclusions about the advantages of each method are discussed. Overall, the alternating slabs method is recommended in those cases where epitaxial mismatch does not represent a significant problem.


1983 ◽  
Vol 16 (10) ◽  
pp. 1819-1825 ◽  
Author(s):  
F Kemper ◽  
B Awe ◽  
F Rosicky ◽  
R Feder

1988 ◽  
Vol 38 (7) ◽  
pp. 3372-3376 ◽  
Author(s):  
J. A. Stephens ◽  
U. Fano

2012 ◽  
Vol 50 (2) ◽  
pp. 161-166
Author(s):  
B. B. Zelener ◽  
B. V. Zelener ◽  
E. A. Manykin ◽  
D. R. Khikhlukha

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