Low-Temperature Specific Heat and Density of States of Boronated Graphite

1966 ◽  
Vol 152 (2) ◽  
pp. 796-800 ◽  
Author(s):  
B. J. C. Van Der Hoeven ◽  
P. H. Keesom ◽  
J. W. McClure ◽  
G. Wagoner
1996 ◽  
Vol 76 (13) ◽  
pp. 2334-2337 ◽  
Author(s):  
J. Etrillard ◽  
J. C. Lasjaunias ◽  
K. Biljakovic ◽  
B. Toudic ◽  
G. Coddens

1995 ◽  
Vol 402 ◽  
Author(s):  
J. C. Lasjaunias ◽  
U. Gottlieb ◽  
O. Laborde ◽  
O. Thomas ◽  
R. Madar

AbstractWe have measured the Hall coefficient and the resistivity of single crystals of CrSi2. This compound crystallises in the hexagonal C40 structure and is generally reported as a semiconductor with a gap of around 0.35 eV. The resistivity is large, several hundreds of μΩ.cm and exhibits a metallic behaviour. RH leads to a hole concentration of 8.5×1026 m−3 at 300K.The specific heat at low temperature (0.7 K < T < 8 K ) can be describe as the sum of an electronic (γΓ) and a phonon (βT3) contribution. The analysis of the data leads to θD = 556 K and to an electronic density of states which is only two times smaller than those obtained for the metallic parent compounds VSi2, NbSi2 and TaSi2. This result questions the semiconducting nature of the chromium disilicide.


2017 ◽  
Vol 86 (8) ◽  
pp. 084601 ◽  
Author(s):  
Tetsuji Okuda ◽  
Hiroto Hata ◽  
Takahiro Eto ◽  
Shogo Sobaru ◽  
Ryosuke Oda ◽  
...  

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