Electron Paramagnetic Resonance and Electrical Properties of the Dominant Paramagnetic Defect in Electron-Irradiatedp-Type Silicon

1966 ◽  
Vol 149 (2) ◽  
pp. 687-692 ◽  
Author(s):  
Nissim Almeleh ◽  
Bernard Goldstein
1987 ◽  
Vol 62 (11) ◽  
pp. 4404-4405 ◽  
Author(s):  
H. H. P. Th. Bekman ◽  
T. Gregorkiewicz ◽  
D. A. van Wezep ◽  
C. A. J. Ammerlaan

1995 ◽  
Vol 378 ◽  
Author(s):  
Michael Stavola ◽  
S.J. Uftring ◽  
M.J. Evans ◽  
P.M. Williams ◽  
G.D. Watkins

AbstractTransition-metal-hydrogen complexes have been introduced into bulk Si samples that contained Pt, Au, or Rh by the indiffusion of hydrogen at 1250°C from H2 gas. The structure and electrical properties of a PtH2 complex in Si have been studied by vibrational spectroscopy and electron paramagnetic resonance (EPR). The PtH2 complex has been found to introduce two levels in the Si bandgap. There is one paramagnetic charge state for which EPR provides detailed structural information and two nonparamagnetic charge states. The hydrogen vibrations of all three charge states of PtH2 have been assigned. In addition to the PtH2 complex, the hydrogen vibrations of several additional complexes in Si samples that contain hydrogen and Pt, Au, or Rh have been identified.


1965 ◽  
Vol 43 (5) ◽  
pp. 1448-1453 ◽  
Author(s):  
L. Russell Melby

Our continued study of derivatives of the 7,7,8,8-tetracyanoquinodimethan anion–radical (TCNQ−•) has shown that the simple N-methylphenazinium salt (IIa) exhibits a volume electrical resistivity of 7 × 10−3 Ω cm and thus is the most highly electrically conductive organic compound known. In contrast, the N-ethyl analogue has a resistivity of 109 Ω cm. Electrical properties of pyrazinium, quinoxalinium, and phenazinium analogues, including phenazine-derived cation–radical salts of TCNQ−•, are discussed. Qualitative observations are made concerning the electron paramagnetic resonance of the N,N′-dimethyldihydrophenazinylium cation–radical.


1996 ◽  
Vol 423 ◽  
Author(s):  
B. Ramakrishnan ◽  
D. J. Keeble ◽  
H. Rodrigo ◽  
A. Kulkarni

AbstractDiamond thin films have been deposited on silicon substrates by hot-filament chemical vapor deposition (HF-CVD). Substrate temperature and methane concentration have been varied and the resulting structural properties of the deposited films studied. Raman spectroscopy, scanning electron microscopy and electron paramagnetic resonance (EPR) measurements were performed. The EPR measurements showed a single spectrum at g = 2.0027(2). The bulk concentration of the paramagnetic species, as determined from the total EPR absorption were found to vary in the range 1017 to 1019 cm−3. Low paramagnetic defect concentrations were found for samples exhibiting a low non-diamond carbon contribution to the Raman spectrum. These samples were those grown with a methane concentration of I % or less.


2013 ◽  
Vol 339 ◽  
pp. 40-45 ◽  
Author(s):  
D.M. Jnaneshwara ◽  
D.N. Avadhani ◽  
B. Daruka Prasad ◽  
B.M. Nagabhushana ◽  
H. Nagabhushana ◽  
...  

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