Low-Temperature Electric Dipole Vibronic Transitions in Rocksalt-and Zinc-Blende-Type Structures

1966 ◽  
Vol 147 (2) ◽  
pp. 541-544 ◽  
Author(s):  
Lawrence A. Vredevoe
Keyword(s):  
Low Temperature ◽  
Electric Dipole ◽  
Zinc Blende ◽  
Vibronic Transitions

Exemple de gisements plombo-zinciferes epigenetiques dans des niveaux calcaires de sillon subsident; les mineralizations du Diois et des Baronnies

1962 ◽  
Vol S7-IV (6) ◽  
pp. 816-825
Author(s):  
Henri Rouvier
Keyword(s):  
Low Temperature ◽  
Metallic Ions ◽  
Upper Eocene ◽  
Mineral Concentration ◽  
Zinc Blende ◽  
Lead And Zinc ◽  
Zinc Concentrations ◽  
Individual Specimen ◽  
The Individual ◽  
Hydrosulfuric Acid

Abstract The mineralization of Diois and Baronnies (France) is examined on the individual specimen, bed, and regional levels. The mineral composition consists essentially of zinc blende, galena and pyrite with some marcasite in a calcitic gangue. Study of galena and calcite samples indicates a low temperature of deposition. Three phases of mineral concentration are hypothesized; precipitation of water-dissolved metallic ions by hydrosulfuric acid; upper Eocene deposition of lead and zinc concentrations along faults by ground water; and upper Miocene to Recent superficial alteration of the beds.

Effect of Nitridation and Buffer in GaN Films Grown on A-Plane (11-20) Sapphire

1997 ◽  
Vol 482 ◽  
Author(s):  
D. Doppalapudi ◽  
E. Iliopoulos ◽  
S. N. Basu ◽  
T. D. Moustakas
Keyword(s):  
Low Temperature ◽  
Systematic Study ◽  
Optoelectronic Properties ◽  
Pronounced Effect ◽  
Significant Fraction ◽  
Plasma Nitridation ◽  
Zinc Blende ◽  
Photoluminescence Studies ◽  
Structural And Optoelectronic Properties

AbstractIn this paper, we report on a systematic study of GaN growth on the A-plane sapphire by plasma-assisted MBE. The effects of plasma nitridation of the substrate and the growth of a low temperature GaN buffer on the structure and optoelectronic properties of the films are addressed. TEM studies indicate that films grown on substrates which were not nitridated prior to growth have a significant fraction of zinc-blende domains and poor orientational relation with the substrate. On the contrary, nitridation leads to films with superior structural and optoelectronic properties. The low temperature GaN buffer, grown on nitridated substrates, was found to also have a pronounced effect on the optoelectronic properties of the GaN films, especially in those with low carrier concentrations. The correlation between TEM and photoluminescence studies suggest that the transition at 3.27 eV can be attributed to the cubic domains in the films.

Optical properties of single wurtzite/zinc-blende ZnSe nanowires grown at low temperature

2015 ◽  
Vol 118 (9) ◽  
pp. 095702 ◽  
Author(s):  
V. Zannier ◽  
T. Cremel ◽  
A. Artioli ◽  
D. Ferrand ◽  
K. Kheng ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Zinc Blende ◽  
Znse Nanowires

Kinetic Growth of One-Dimensional Zinc-Blende CdTe Nanocrystals by Aqueous Synthesis at Low Temperature

2009 ◽  
Vol 9 (12) ◽  
pp. 5077-5082 ◽  
Author(s):  
Tao Wang ◽  
Zhengguo Jin ◽  
Yamin Shi ◽  
Wenle Li ◽  
Jingxia Yang
Keyword(s):  
Low Temperature ◽  
Aqueous Synthesis ◽  
One Dimensional ◽  
Cdte Nanocrystals ◽  
Kinetic Growth ◽  
Zinc Blende

scholarly journals Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method

1996 ◽  
Vol 1 ◽  
Author(s):  
T. S. Cheng ◽  
C. T. Foxon ◽  
N. J Jeffs ◽  
O. H. Hughes ◽  
B. G. Ren ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Gaas Substrate ◽  
Plasma Source ◽  
Columnar Structure ◽  
Structural And Optical Properties ◽  
Active Nitrogen ◽  
X Ray ◽  
Zinc Blende ◽  
Gaas Substrates

Films of GaN have been grown using a modified MBE method in which the active nitrogen is supplied from an RF activated plasma source. Wurtzite films grown on (0 0 1) oriented GaAs substrates show highly defective, ordered polycrystalline growth with a columnar structure; the (0 0 0 1) planes of the layers being parallel to the (0 0 1) planes of the GaAs substrate. Films grown using a coincident As flux, however, have a single crystal zinc-blende growth mode. They have better structural and optical properties. To improve the properties of the wurtzite films we have studied the growth of such films on (1 1 1)A and (1 1 1)B oriented GaAs substrates. The improved structural properties of such films, assessed using x-ray and TEM methods, correlate with better low temperature PL performance.

A New Red Emitting Phosphor Mg2SnO4: Eu

2010 ◽  
Vol 33 ◽  
pp. 313-316
Author(s):  
Xiao Jun Wang ◽  
Xiao Chun Zhou
Keyword(s):  
Solid State ◽  
Low Temperature ◽  
Tin Oxide ◽  
Electric Dipole ◽  
Solid State Reaction ◽  
Electric Dipole Transition ◽  
Dipole Transition ◽  
Red Emission ◽  
Emission Transition ◽  
Red Emitting Phosphor

Mg2SnO4 was adopted as the host material of a new red emitting phosphor. Lumin-escence properties of the europium-doped magnesium tin oxide prepared by the low temperature solid state reaction were investigated under 395nm excitation. Under 395 nm excitation, the Mg2SnO4: Eu phosphor exhibits novel red emission at about 613 nm which is assigned to the 5D0 → 7F2 electric – dipole transition. Furthermore, the emission transition 5D0 → 7F2 has been found to be more prominent over the normal orange emission transition 5D0 → 7F1.

Thermodynamic properties and waves in a dipole plasma

1988 ◽  
Vol 39 (3) ◽  
pp. 475-483 ◽  
Author(s):  
Solomon Mulugeta ◽  
V. N. Malnev
Keyword(s):  
Dipole Moment ◽  
Low Temperature ◽  
Thermodynamic Properties ◽  
Electric Dipole Moment ◽  
Thermodynamic Functions ◽  
Electric Dipole ◽  
Neutral Component ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Dispersion Properties

A low-temperature plasma containing polar molecules with constant electric dipole moment as the neutral component is considered. The thermodynamic functions and the dispersion properties of such a plasma are investigated.

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