Electrical and Optical Properties of Epitaxial Films of PbS, PbSe, PbTe, and SnTe

1965 ◽  
Vol 140 (1A) ◽  
pp. A330-A342 ◽  
Author(s):  
Jay N. Zemel ◽  
James D. Jensen ◽  
Richard B. Schoolar
2008 ◽  
Vol 516 (17) ◽  
pp. 5785-5789 ◽  
Author(s):  
Yoshiharu Kakehi ◽  
Kazuo Satoh ◽  
Tsutom Yotsuya ◽  
Atsushi Ashida ◽  
Takeshi Yoshimura ◽  
...  

2002 ◽  
Vol 747 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
Hideo Hosono

ABSTRACTEpitaxial films of LaCuOS, a wide gap p-type semiconductor, were grown on yittria- stabi-lized-zirconia (YSZ) (001) or MgO (001) substrates by a reactive solid phase epitaxy (R-SPE) method. Crystal quality, electrical and optical properties on the epitaxial films on each substrate are examined in this paper. Achievement of the heteroepitaxial growth of LaCuOS on the MgO (001) substrate improves optical properties of LaCuOS such as spectral bandwidths and emission intensity, suggesting that the MgO (001) substrate is more preferable than the YSZ (001) for epitaxial growth substrate for LaCuOS.


2008 ◽  
Vol 104 (7) ◽  
pp. 073712 ◽  
Author(s):  
Fubao Gao ◽  
NuoFu Chen ◽  
X. W. Zhang ◽  
Yu Wang ◽  
Lei Liu ◽  
...  

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-869-C4-872
Author(s):  
R. T. Phillips ◽  
A. J. Mackintosh ◽  
A. D. Yoffe

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