Linear-Network Model for Magnetic Breakdown in Two Dimensions

1965 ◽  
Vol 140 (1A) ◽  
pp. A135-A143 ◽  
Author(s):  
W. G. Chambers
2000 ◽  
Vol 1 (2-3) ◽  
pp. 153-157 ◽  
Author(s):  
G. Gompper ◽  
D.M. Kroll

The network model of electron orbits coupled by magnetic breakdown is extended to a two dimensional metal containing dislocations. It is shown that the network is still likely to be a valid representation, but the phase lengths of the arms are altered, and a very low dislocation density (about one per electron orbit) is enough to produce almost complete randomization. The Bloch-like quasi-particles that can travel in straight lines on a perfect network are now heavily scattered, and it is preferable to think of electrons performing a random walk on the arms of the network, although the justification for this procedure is somewhat doubtful. A simpler alternative to Falicov & Sievert’s method is presented for calculating the electrical conductivity of a random-phase network, and is extended to cases where randomness affects only some of the phases, as is believed to be the situation in real metals like zinc and magnesium.


2015 ◽  
Vol 9 (7) ◽  
pp. 1083-1092 ◽  
Author(s):  
Bjoern Kolewe ◽  
Torsten Jeinsch ◽  
Robert Beckmann ◽  
Adel Haghani

Author(s):  
Amir Safdarian ◽  
Mahmud Fotuhi-Firuzabad ◽  
Farrokh Aminifar ◽  
Matti Lehtonen ◽  
Aydogan Ozdemir

1999 ◽  
Vol 77 (5) ◽  
pp. 371-384 ◽  
Author(s):  
E Abou-Allam ◽  
T Manku ◽  
C -H Chen ◽  
M J Deen

This paper describes a self-consistent lumped linear network model for MOSFETs that takes into account the distributed nature of the gate resistance. The model is verified with experimental results. The self-consistent model consists of placing a lumped resistance in series with the gate. The lumped resistance takes the value of the total gate resistance divided by a factor of three. To second order in jω, this is shown to be almost an exact approximation in determining all y-parameters and the equivalent noise resistance. The third-order terms, however, give rise to a 17% error. The value of ft for a MOS transistor shows no dependence with the gate resistance to all orders in jω. Furthermore, we also show that the thermal noise arising from the distributed gate resistance does not contribute to any additional equivalent input current noise. PACS No.: 73.40


2004 ◽  
Vol 44 (3) ◽  
pp. 638 ◽  
Author(s):  
Yoon Chang No ◽  
Han Seung Kee ◽  
Kim Hak Yong

Biosystems ◽  
2017 ◽  
Vol 156-157 ◽  
pp. 53-62 ◽  
Author(s):  
Michail-Antisthenis Tsompanas ◽  
Andrew Adamatzky ◽  
Ioannis Ieropoulos ◽  
Neil Phillips ◽  
Georgios Ch. Sirakoulis ◽  
...  

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