Rare-Gas and Hydrogen Molecule Electronic States, Noncrossing Rule, and Recombination of Electrons with Rare-Gas and Hydrogen Ions

1964 ◽  
Vol 136 (4A) ◽  
pp. A962-A965 ◽  
Author(s):  
Robert S. Mulliken
Keyword(s):  
Hydrogen Molecule ◽  
Electronic States ◽  
Rare Gas ◽  
Hydrogen Ions

Low‐lying electronic states of the rare gas oxides

1977 ◽  
Vol 66 (8) ◽  
pp. 3767-3777 ◽  
Author(s):  
Thom. H. Dunning ◽  
P. Jeffrey Hay
Keyword(s):  
Electronic States ◽  
Rare Gas

Photophysics of low lying electronic states of Cl2 in rare gas solids

1976 ◽  
Vol 64 (9) ◽  
pp. 3615-3620 ◽  
Author(s):  
V. E. Bondybey ◽  
Christine Fletcher
Keyword(s):  
Electronic States ◽  
Rare Gas

scholarly journals Erratum: On the possible existence of hydrogen ions in solid rare‐gas crystals

1974 ◽  
Vol 60 (7) ◽  
pp. 2946-2946
Author(s):  
Simon S. Cohen ◽  
Arza Ron
Keyword(s):  
Rare Gas ◽  
Hydrogen Ions

Absorption Spectra of Ground-State and Low-Lying Electronic States of Copper Nitrosyl: A Rare Gas Matrix Isolation Study

2005 ◽  
Vol 109 (45) ◽  
pp. 10264-10272 ◽  
Author(s):  
Lahouari Krim ◽  
Xuefeng Wang ◽  
Laurent Manceron ◽  
Lester Andrews
Keyword(s):  
Absorption Spectra ◽  
Ground State ◽  
Matrix Isolation ◽  
Electronic States ◽  
Rare Gas

The History, Physics, and Applications of the Smart-Cut® Process

MRS Bulletin ◽  
1998 ◽  
Vol 23 (12) ◽  
pp. 35-39 ◽  
Author(s):  
Michel Bruel
Keyword(s):  
Driving Force ◽  
Silicon On Insulator ◽  
Inert Gas ◽  
Rare Gas ◽  
High Dose ◽  
Hydrogen Ions ◽  
Local Cluster ◽  
Statistical Fluctuations ◽  
Basic Physics ◽  
Long Time

In a silicon-on-insulator (SOI) structure, a thin layer of monocrystalline silicon rests on a dielectric layer—generally amorphous—itself on a silicon wafer. Because such a structure cannot be achieved by conventional methods, different ways had to be imagined to facilitate its construction.The basic physics phenomenon that led the author to invent the process generally known under the name of Smart-Cut® is blistering. Blistering (Figure 1), in addition to flaking and exfoliation, is a visible macroscopic effect that has been known for a long time and is induced by high-dose implantations of inert gas or hydrogen ions in materials. These macroscopic effects result from the cooperative result of the microscopic effects induced in depth by penetration of particles. The microscopic effects of hydrogen or rare-gas implantation such as creation of microcavities, microblisters, or microbubbles (close to the penetration depth Rp corresponding to the maximum concentration) have been known for a long time. These microcavities enhance propagation of intercavity fractures where their density (depending on statistical fluctuations) reaches a percolation threshold. This leads to formation of a local cluster where all the microcavities are joined by a fractured zone, resulting in a blister at the surface. The driving force of this mechanism is the gas pressure in the microcavities and the stresses in the layer.

The electrostatic calculation of molecular energies - I. Methods of calculating molecular energies

1954 ◽  
Vol 226 (1165) ◽  
pp. 170-178 ◽  
Keyword(s):  
Complex Systems ◽  
Conventional Method ◽  
Hydrogen Molecule ◽  
Electronic States ◽  
Wave Functions ◽  
Hydrogen Molecular Ion ◽  
New Methods ◽  
Electrostatic Method ◽  
Conventional Calculation ◽  
Approximate Wave

The calculation of molecular energies from assumed approximate wave functions is discussed. It is shown that the conventional method, based on the Hamiltonian integral, is but one of several possible approximations, and that two other methods, the virial method and the electrostatic method, avoid the most serious difficulties encountered in a conventional calculation. The mathematical simplicity of the new methods makes them especially suitable for non-empirical calculations on complex systems. The electrostatic method is exemplified by detailed calculations on various electronic states of the hydrogen molecule and the hydrogen molecular ion.

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