Coulomb Scattering without Atomic Excitation for 50-, 100-, 200-, and 400-keV Electrons

1963 ◽  
Vol 132 (6) ◽  
pp. 2558-2561 ◽  
Author(s):  
J. W. Motz ◽  
R. C. Placious ◽  
C. E. Dick
Keyword(s):  
Coulomb Scattering ◽  
Atomic Excitation

Coulomb Scattering in Aluminum without Atomic Excitation for 1-MeV Electrons

1965 ◽  
Vol 138 (1A) ◽  
pp. A12-A14 ◽  
Author(s):  
David H. Rester ◽  
Walter J. Rainwater
Keyword(s):  
Coulomb Scattering ◽  
Atomic Excitation

Coulomb Scattering of Electrons in Aluminum without Atomic Excitation

1965 ◽  
Vol 140 (1A) ◽  
pp. A165-A168 ◽  
Author(s):  
David H. Rester ◽  
Walter J. Rainwater
Keyword(s):  
Coulomb Scattering ◽  
Atomic Excitation

scholarly journals Exothermic dark matter for XENON1T excess

2021 ◽  
Vol 2021 (1) ◽  
Author(s):  
Hyun Min Lee
Keyword(s):  
Dark Matter ◽  
Mass Difference ◽  
Mass Splitting ◽  
Effective Theory ◽  
Recoil Energy ◽  
Detector Resolution ◽  
Atomic Excitation ◽  
Microscopic Models ◽  
Electron Recoil ◽  
Two Component

Abstract Motivated by the recent excess in the electron recoil from XENON1T experiment, we consider the possibility of exothermic dark matter, which is composed of two states with mass splitting. The heavier state down-scatters off the electron into the lighter state, making an appropriate recoil energy required for the Xenon excess even for the standard Maxwellian velocity distribution of dark matter. Accordingly, we determine the mass difference between two component states of dark matter to the peak electron recoil energy at about 2.5 keV up to the detector resolution, accounting for the recoil events over ER = 2 − 3 keV, which are most significant. We include the effects of the phase-space enhancement and the atomic excitation factor to calculate the required scattering cross section for the Xenon excess. We discuss the implications of dark matter interactions in the effective theory for exothermic dark matter and a massive Z′ mediator and provide microscopic models realizing the required dark matter and electron couplings to Z′.

Multiple coulomb scattering of 7.3 and 11.7 GeV/c muons on a Cu target

1986 ◽  
Vol 243 (2-3) ◽  
pp. 518-522 ◽  
Author(s):  
S.A. Akimenko ◽  
V.I. Belousov ◽  
A.M. Blik ◽  
G.I. Britvich ◽  
V.N. Kolosov ◽  
...  
Keyword(s):  
Coulomb Scattering ◽  
Multiple Coulomb Scattering

The electron angular distribution at various depths in cascade showers

1968 ◽  
Vol 46 (10) ◽  
pp. S201-S203
Author(s):  
V. V. Guzhavin ◽  
I. P. Ivanenko ◽  
B. E. Samosudov
Keyword(s):  
Angular Distribution ◽  
Analytical Solution ◽  
Elementary Event ◽  
Coulomb Scattering ◽  
Multiple Coulomb Scattering

An analytical solution of the angular problem to the approximation of middle angles which is valid for any angles of particle deviation in an elementary event of Coulomb scattering has been obtained using the approximate operator (Vaskin et al. 1966). The proposed method makes it possible to evaluate the accuracy of the resulting expressions and the contribution from non-multiple and multiple Coulomb scattering.

Characterizing intra-exciton Coulomb scattering in terahertz excitations

2014 ◽  
Vol 105 (20) ◽  
pp. 201109 ◽  
Author(s):  
S. Zybell ◽  
J. Bhattacharyya ◽  
S. Winnerl ◽  
F. Eßer ◽  
M. Helm ◽  
...  
Keyword(s):  
Coulomb Scattering

SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps

2007 ◽  
Vol 556-557 ◽  
pp. 835-838 ◽  
Author(s):  
Amador Pérez-Tomás ◽  
Michael R. Jennings ◽  
Philip A. Mawby ◽  
James A. Covington ◽  
Phillippe Godignon ◽  
...  
Keyword(s):  
Degradation Mechanism ◽  
Mobility Model ◽  
Effect Of Temperature ◽  
Coulomb Scattering ◽  
Interface Traps ◽  
Channel Mobility ◽  
Inversion Channel ◽  
Scattering Effects ◽  
Charge Concentration ◽  
Substrate Doping

In prior work we have proposed a mobility model for describing the mobility degradation observed in SiC MOSFET devices, suitable for being implemented into a commercial simulator, including Coulomb scattering effects at interface traps. In this paper, the effect of temperature and doping on the channel mobility has been modelled. The computation results suggest that the Coulomb scattering at charged interface traps is the dominant degradation mechanism. Simulations also show that a temperature increase implies an improvement in field-effect mobility since the inversion channel concentration increases and the trapped charge is reduced due to bandgap narrowing. In contrast, increasing the substrate impurity concentration further degrades the fieldeffect mobility since the inversion charge concentration decreases for a given gate bias. We have good agreement between the computational results and experimental mobility measurements.

Plasmon excitation by coulomb scattering of electrons in 2D systems

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 646-648 ◽  
Author(s):  
R.A. Höpfel ◽  
E. Gornik ◽  
A.C. Gossard ◽  
W. Wiegmann
Keyword(s):  
Coulomb Scattering ◽  
2D Systems ◽  
Plasmon Excitation

Atomic-Excitation Effects on Nuclear Reactions

1980 ◽  
Vol 45 (9) ◽  
pp. 703-706 ◽  
Author(s):  
W. J. Thompson ◽  
J. F. Wilkerson ◽  
T. B. Clegg ◽  
J. M. Feagin ◽  
E. J. Ludwig ◽  
...  
Keyword(s):  
Nuclear Reactions ◽  
Atomic Excitation
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