(p, γ) Resonance-Curve Shapes and Measurements of Resonance Energies withH2+Beams

1963 ◽  
Vol 132 (4) ◽  
pp. 1710-1719 ◽  
Author(s):  
R. O. Bondelid ◽  
J. W. Butler
Keyword(s):  
Resonance Curve ◽  
Resonance Energies

(p, γ) Resonance-Curve Shapes and Measurements of Resonance Energies withH1+Beams

1963 ◽  
Vol 130 (3) ◽  
pp. 1078-1090 ◽  
Author(s):  
R. O. Bondelid ◽  
J. W. Butler
Keyword(s):  
Resonance Curve ◽  
Resonance Energies

Aromaticity in heterocyclic molecules containing divalent sulfur

1988 ◽  
Vol 53 (9) ◽  
pp. 2023-2054 ◽  
Author(s):  
Milan Randić ◽  
Sonja Nikolić ◽  
Nenad Trinajstić
Keyword(s):  
Sulfur Atom ◽  
Positional Isomers ◽  
Heterocyclic Molecules ◽  
Resonance Energies ◽  
Conjugated Circuits ◽  
Divalent Sulfur

The conjugated circuits model is applied to heterocycles containing divalent sulfur. A novel parametrization is introduced for 4n + 2 and 4n conjugated circuits containing a single sulfur atom. The relative aromatic stabilities of a number of heterocyclic systems containing divalent sulfur are studied. Comparison is made whenever possible with earlier reported resonance energies of these compounds, obtained by using Huckel MO and SCF π-MO models, and appropriate reference structures. Special attention is given to positional isomers. An explanation of the differences amongst such isomers is given.

High precision time-of-flight measurements of neutron resonance energies in carbon and oxygen between 3 and 30 MeV

1980 ◽  
Vol 169 (1) ◽  
pp. 185-198 ◽  
Author(s):  
S. Cierjacks ◽  
F. Hinterberger ◽  
G. Schmalz ◽  
D. Erbe ◽  
P.v. Rossen ◽  
...  
Keyword(s):  
High Precision ◽  
Time Of Flight ◽  
Neutron Resonance ◽  
Resonance Energies ◽  
Precision Time ◽  
Flight Measurements

scholarly journals Cyclotron Resonance Energies at a Low X-Ray Luminosity: A0535+262 Observed with Suzaku

2006 ◽  
Vol 648 (2) ◽  
pp. L139-L142 ◽  
Author(s):  
Y. Terada ◽  
T. Mihara ◽  
M. Nakajima ◽  
M. Suzuki ◽  
N. Isobe ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
X Ray ◽  
Resonance Energies ◽  
Low X

Analysis of nitride films on silicon substrates by ion beam methods

1995 ◽  
Vol 10 (12) ◽  
pp. 3124-3128 ◽  
Author(s):  
Z.S. Zheng ◽  
J.R. Liu ◽  
X.T. Cui ◽  
W.K. Chu ◽  
S.P. Rangarajan ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Light Element ◽  
Aluminum Foil ◽  
Resonance Scattering ◽  
Particle Beam ◽  
Silicon Substrates ◽  
Resonance Energies ◽  
Contamination Levels ◽  
Foil Substrate

The simultaneous determination of light element contamination levels and accurate nitrogen-to-metal ratios in nitride thin films deposited on silicon substrates is demonstrated by using α-particle beam energies in the range 3–4 MeV. In this energy range, significant light element sensitivity enhancements are observed, while the heavy elements show classical Rutherford behavior. The use of resonance scattering at different resonance energies is shown to be the method of choice for analyzing BN films on silicon. Also, a technique is suggested for analyzing very thin films in which an aluminum foil substrate and buffer layer are used to enhance sensitivities.

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