Lattice Thermal Conductivity of Disordered Semiconductor Alloys at High Temperatures

1963 ◽  
Vol 131 (5) ◽  
pp. 1906-1911 ◽  
Author(s):  
B. Abeles
1995 ◽  
Vol 27/28 (5) ◽  
pp. 457-466
Author(s):  
Madabhushi Chari ◽  
Pramila Aggarwal

Energies ◽  
2020 ◽  
Vol 13 (2) ◽  
pp. 337 ◽  
Author(s):  
Weon Ho Shin ◽  
Hyun-Sik Kim ◽  
Se Yun Kim ◽  
Sung-sil Choo ◽  
Seok-won Hong ◽  
...  

Significant bipolar conduction of the carriers in Bi2Te3-based alloys occurs at high temperatures due to their narrow bandgaps. Therefore, at high temperatures, their Seebeck coefficients decrease, the bipolar thermal conductivities rapidly increase, and the thermoelectric figure of merit, zT, rapidly decreases. In this study, band modification of n-type Cu0.008Bi2(Te,Se)3 alloys by sulfur (S) doping, which could widen the bandgap, is investigated regarding carrier transport properties and bipolar thermal conductivity. The increase in bandgap by S doping is demonstrated by the Goldsmid–Sharp estimation. The bipolar conduction reduction is shown in the carrier transport characteristics and thermal conductivity. In addition, S doping induces an additional point-defect scattering of phonons, which decreases the lattice thermal conductivity. Thus, the total thermal conductivity of the S-doped sample is reduced. Despite the reduced power factor due to the unfavorable change in the conduction band, zT at high temperatures is increased by S doping with simultaneous reductions in bipolar and lattice thermal conductivity.


Sign in / Sign up

Export Citation Format

Share Document