Relaxation and Activation Energies for an Interstitial Neutral Defect in an Alkali Halide Lattice

1961 ◽  
Vol 124 (3) ◽  
pp. 726-735 ◽  
Author(s):  
Robert D. Hatcher ◽  
G. J. Dienes
Keyword(s):  
Alkali Halide ◽  
Activation Energies ◽  
Neutral Defect

Activation energies for the desorption of neutral molecules and positive ions from alkali-halide layers heated on a metal surface

1997 ◽  
Vol 299 (1-2) ◽  
pp. 59-65 ◽  
Author(s):  
Hiroyuki Kawano ◽  
Yongfa Zhu ◽  
Susumu Kamidoi ◽  
Hironari Shimizu ◽  
Masayuki Udaka
Keyword(s):  
Metal Surface ◽  
Alkali Halide ◽  
Activation Energies ◽  
Positive Ions

Anion polarizability functions in alkali halide crystals

1997 ◽  
Vol 92 (6) ◽  
pp. 1029-1033
Author(s):  
A. BATANA ◽  
J. BRUNO ◽  
R.W. MUNN
Keyword(s):  
Alkali Halide ◽  
Alkali Halide Crystals

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

Activation energies of technological termodonors in neutron doped silicon

2015 ◽  
Vol 19 (1/2) ◽  
Author(s):  
L. I. Panasjuk ◽  
V. V. Kolomoets ◽  
V. N. Ermakov ◽  
S. A. Fedosov ◽  
L. V. Yashchynskiy
Keyword(s):  
Activation Energies ◽  
Doped Silicon
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