"Size Effect" in Electrical Resistivity Measurements on Single Crystals of High-Purity Tin at Liquid Helium Temperatures

1957 ◽  
Vol 108 (6) ◽  
pp. 1397-1397 ◽  
Author(s):  
J. E. Kunzler ◽  
C. A. Renton
Keyword(s):  
Electrical Resistivity ◽  
Size Effect ◽  
Single Crystals ◽  
Liquid Helium ◽  
High Purity ◽  
Resistivity Measurements

The effects of sulfuric acid on the creep, recrystallization, and electrical properties of ice

2003 ◽  
Vol 81 (1-2) ◽  
pp. 395-400 ◽  
Author(s):  
D Iliescu ◽  
I Baker ◽  
X Li
Keyword(s):  
Electrical Resistivity ◽  
Sulfuric Acid ◽  
Single Crystals ◽  
Equal Channel Angular Extrusion ◽  
Boundary Migration ◽  
Constant Load ◽  
Tensile Creep ◽  
Grain Boundary Migration ◽  
Resistivity Measurements ◽  
Lower Resistivity

Both constant load creep and recrystallization are investigated using single crystals of 70–170 ppb sulfuric-acid-doped and -undoped ice. Both sets of crystals exhibited strains in excess of 200% under tensile creep. The undoped specimens reached these strains roughly twice as fast as the doped specimens. After large local strains were imparted to cuboidal single crystals using equal channel angular extrusion at –2°C and subsequent annealing at the same temperature, recrystallization occurred. It was found that a higher concentration of H2SO4 retarded both recrystallization and the subsequent grain-boundary migration. Direct current electrical resistivity measurements performed on polycrystalline, sulfuric-acid-doped (3 ppm) ice at –10°C showed a much lower resistivity in the grain boundaries than in the lattice. PACS No.: 81.90

Anisotropy of Residual Electrical Resistivity in High-Purity Aluminum Single Crystals

1993 ◽  
Vol 62 (12) ◽  
pp. 4178-4181 ◽  
Author(s):  
Eiji Hashimoto ◽  
Yoshitake Ueda ◽  
Hirofumi Tamura ◽  
Takao Kino
Keyword(s):  
Electrical Resistivity ◽  
Single Crystals ◽  
High Purity ◽  
High Purity Aluminum

CRYSTAL GROWTH OF MULTI-LAYERED Ba2Ca4Cu5O10(O,F)2 (F-0245) SUPERCONDUCTOR UNDER HIGH PRESSURE

2005 ◽  
Vol 19 (01n03) ◽  
pp. 263-266 ◽  
Author(s):  
K. TOKIWA ◽  
H. OKUMOTO ◽  
S. KONO ◽  
S. IGA ◽  
K. TAKEMURA ◽  
...  
Keyword(s):  
High Pressure ◽  
Electrical Resistivity ◽  
Crystal Growth ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Cuprate Superconductors ◽  
Resistivity Measurements ◽  
Starting Mixture

Single crystals of multi-layered Ba 2 Ca 4 Cu 5 O 10( O , F )2 superconductor(F-0245) have been grown under a high pressure of 4.5 GPa . Single crystals with in-plane length of 500μm were typically obtained and flat shiny areas with more than 1 mm 2 were also observed on the surface of fractured samples. Tc values for these samples were determined by electrical resistivity measurements. These values were found to change from 70 K to 85 K by change of oxygen and fluorine contents in the starting mixture. The temperature dependence of resistivity showed characteristic of under-doped cuprate superconductors.

Electrical resistivity of gallium single crystals at low temperatures

1951 ◽  
Vol 209 (1099) ◽  
pp. 542-550 ◽  
Keyword(s):  
Electrical Resistivity ◽  
Specific Heat ◽  
Single Crystals ◽  
Low Temperatures ◽  
Room Temperature ◽  
Resistivity Measurements ◽  
Characteristic Temperatures ◽  
The Ideal

Electrical resistivity measurements on single crystals of gallium grown to conform approximately to the three axial directions have been extended to low temperatures, detailed investigation being made over the range 20.4 to 4.2° K. The anisotropy of this property increases in this region where the resistivity ratios for the three specimens are approximately 1: 2.1: 8 compared with 1: 2.1 6 : 6.5 5 at room temperature. The ‘ideal’ resistivity is proportional to T n , where n ≃ 4.45 for the range 5 to 12° K and decreases to about 3.9 for the range 12 to 20.4° K. The characteristic temperatures as derived from Grüneisen’s expression show relatively small differences for the three axial directions but decrease with decrease in temperature. Comparable variations with temperature are observed in the characteristic temperatures derived previously from specific heat measurements on gallium.

The Influence of the Size Effect on Electrical Resistivity Measurements in Irradiated Metals

1967 ◽  
Vol 21 (2) ◽  
pp. 741-745 ◽  
Author(s):  
F. Dworschak ◽  
H. Schuster ◽  
H. Wollenberger ◽  
J. Wurm
Keyword(s):  
Electrical Resistivity ◽  
Size Effect ◽  
Resistivity Measurements
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