Field Effect on an Illuminated Ge Surface and Investigation of the Surface Recombination Process

1957 ◽  
Vol 105 (5) ◽  
pp. 1459-1464 ◽  
Author(s):  
Shyh Wang ◽  
George Wallis
Keyword(s):  
Field Effect ◽  
Surface Recombination ◽  
Recombination Process

Stable, Extrinsic, Field Effect Passivation for Back Contact Silicon Solar Cells

2015 ◽  
Vol 242 ◽  
pp. 67-72 ◽  
Author(s):  
Ruy S. Bonilla ◽  
Katherine Collett ◽  
Lucy Rands ◽  
George Martins ◽  
Richard Lobo ◽  
...  
Keyword(s):  
Field Effect ◽  
Diffusion Mechanism ◽  
Oxide Films ◽  
Surface Recombination ◽  
Ionic Species ◽  
Thermally Grown Oxide ◽  
Silicon Surfaces ◽  
Surface Recombination Velocity ◽  
Pure Diffusion ◽  
Recombination Velocity

A new technique is described by which ionic species can be rapidly transported into oxide films, and once there provide effective and stable field effect passivation to silicon surfaces. Field effect passivation in thermally grown oxide films has been achieved by embedding potassium ions using a combined drift and diffusion mechanism at high temperature. This process has been shown to be over 10 times faster than a pure diffusion process. The resulting passivation stable for periods exceeding 600 days, with lifetimes reaching 1.4 ms, equivalent to a surface recombination velocity (SRV) ≤ 5.7 cm/s, on 1 Ωcm, n-type, FZ-Si.

Inline PL Inspection and Advanced Offline Evaluation of Passivation Defects, Charge and Interfaces

2013 ◽  
Vol 205-206 ◽  
pp. 128-135 ◽  
Author(s):  
Andrew Findlay ◽  
Jacek Lagowski ◽  
Marshall Wilson ◽  
John D'Amico ◽  
Alexandre Savtchouk ◽  
...  
Keyword(s):  
Field Effect ◽  
Open Circuit Voltage ◽  
Surface Recombination ◽  
Open Circuit ◽  
Dielectric Films ◽  
Saturation Current ◽  
Cause Analysis ◽  
Root Cause ◽  
Dielectric Charge

Recently introduced techniques for whole wafer mapping and imaging create new possibilities for root cause analysis of emitter passivation defects. Inline compatible PL imaging identifies such defects as localized regions with increased emitter saturation current and reduced implied open circuit voltage. Advanced offline evaluation of defective areas can be then performed with multiparameter noncontact measurements capable to establish the role of surface recombination, the interface trap density, or the dielectric charge that controls the field-effect passivation. The relevant novel metrologies are discussed and are illustrated using examples of advanced silicon passivation by dielectric films and by a-Si heterojunction structures.

Electric Field Effect Surface Passivation for Silicon Solar Cells

2013 ◽  
Vol 205-206 ◽  
pp. 346-351 ◽  
Author(s):  
Ruy S. Bonilla ◽  
Christian Reichel ◽  
Martin Hermle ◽  
Peter R. Wilshaw
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Field Effect ◽  
High Efficiency ◽  
Surface Recombination ◽  
Front Surface ◽  
Double Layers ◽  
Surface Recombination Velocity ◽  
Silicon Solar Cells ◽  
Electric Field Effect

Effective reduction of front surface carrier recombination is essential for high efficiency silicon solar cells. Dielectric films are normally used to achieve such reduction. They provide a) an efficient passivation of surface recombination and b) an effective anti-reflection layer. The conditions that produce an effective anti-reflection coating are not necessarily the same for efficient passivation, hence both functions are difficult to achieve simultaneously and expensive processing steps are normally required. This can be overcome by enhancing the passivation properties of an anti-reflective film using the electric field effect. Here, we demonstrate that thermally grown silicon dioxide is an efficient passivation layer when chemically treated and electrically charged, and it is stable over a period of ten months. Double layers of SiO2 and SiN also provided stable and efficient passivation for a period of a year when the sample is submitted to a post-charge anneal. Surface recombination velocity upper limits of 9 cm/s and 19 cm/s were inferred for single and double layers respectively on n-type, 5 Ωcm, Cz-Si.

Interplay between temperature effects and surface recombination process in UV photoresponse of ZnO nanowires

2015 ◽  
Vol 324 ◽  
pp. 512-516 ◽  
Author(s):  
Woong-Ki Hong ◽  
Jung Inn Sohn ◽  
Seung Nam Cha ◽  
Jong Min Kim ◽  
Mark E. Welland
Keyword(s):  
Temperature Effects ◽  
Surface Recombination ◽  
Zno Nanowires ◽  
Recombination Process
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