scholarly journals Chemistry integrated circuit: chemical system on a complementary metal oxide semiconductor integrated circuit

2014 ◽  
Vol 372 (2012) ◽  
pp. 20130109 ◽  
Author(s):  
Kazuo Nakazato
Keyword(s):  
Integrated Circuit ◽  
High Speed ◽  
Large Scale ◽  
Sensor Array ◽  
Single Photon ◽  
Sensor Arrays ◽  
Oxide Semiconductor ◽  
Chemical System ◽  
Photoelectric Conversion ◽  
Integrated Sensor

By integrating chemical reactions on a large-scale integration (LSI) chip, new types of device can be created. For biomedical applications, monolithically integrated sensor arrays for potentiometric, amperometric and impedimetric sensing of biomolecules have been developed. The potentiometric sensor array detects pH and redox reaction as a statistical distribution of fluctuations in time and space. For the amperometric sensor array, a microelectrode structure for measuring multiple currents at high speed has been proposed. The impedimetric sensor array is designed to measure impedance up to 10 MHz. The multimodal sensor array will enable synthetic analysis and make it possible to standardize biosensor chips. Another approach is to create new functional devices by integrating molecular systems with LSI chips, for example image sensors that incorporate biological materials with a sensor array. The quantum yield of the photoelectric conversion of photosynthesis is 100%, which is extremely difficult to achieve by artificial means. In a recently developed process, a molecular wire is plugged directly into a biological photosynthetic system to efficiently conduct electrons to a gold electrode. A single photon can be detected at room temperature using such a system combined with a molecular single-electron transistor.

scholarly journals Effects of Process Variations in a HCMOS IC using a Monte Carlo SPICE Simulation

2017 ◽  
pp. 11-16
Author(s):  
Widianto Widianto ◽  
Lailis Syafaah ◽  
Nurhadi Nurhadi
Keyword(s):  
Monte Carlo ◽  
Integrated Circuit ◽  
High Speed ◽  
Evaluation Method ◽  
Complementary Metal Oxide Semiconductor ◽  
Process Variations ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Spice Simulation ◽  
Simulation Results

In this paper, effects of process variations in a HCMOS (High-Speed Complementary Metal Oxide Semiconductor) IC (Integrated Circuit) are examined using a Monte Carlo SPICE (Simulation Program with Integrated Circuit Emphasis) simulation. The variations of the IC are L and VTO variations. An evaluation method is used to evaluate the effects of the variations by modeling it using a normal (Gaussian) distribution. The simulation results show that the IC may be detected as a defective IC caused by the variations based on large supply currents flow to it. 

scholarly journals Lead Selenide Polycrystalline Coatings Sensitized Using Diffusion and Ion Beam Methods for Uncooled Mid-Infrared Photodetection

Coatings ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 444 ◽  
Author(s):  
Hao Yang ◽  
Xiaojiang Li ◽  
Guodong Wang ◽  
Jianbang Zheng
Keyword(s):  
High Speed ◽  
Large Scale ◽  
Low Cost ◽  
Ion Beam ◽  
Lead Selenide ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Recombination Suppression ◽  
Mid Infrared ◽  
Physical Effects

Polycrystalline lead selenide material that is processed after a sensitization technology offers the additional physical effects of carrier recombination suppression and carrier transport manipulation, making it sufficiently sensitive to mid-infrared radiation at room temperature. Low-cost and large-scale integration with existing electronic platforms such as complementary metal–oxide–semiconductor (CMOS) technology and multi-pixel readout electronics enable a photodetector based on polycrystalline lead selenide coating to work in high-speed, low-cost, and low-power consumption applications. It also shows huge potential to compound with other materials or structures, such as the metasurface for novel optoelectronic devices and more marvelous properties. Here, we provide an overview and evaluation of the preparations, physical effects, properties, and potential applications, as well as the optoelectronic enhancement mechanism, of lead selenide polycrystalline coatings.

Organic Piezoresistive Pressure Sensitive Robotic Skin for Physical Human-Robot Interaction

2020 ◽  
Author(s):  
Danming Wei ◽  
Ruoshi Zhang ◽  
Mohammad N. Saadatzi ◽  
Olalekan O. Olowo ◽  
Dan O. Popa
Keyword(s):  
Integrated Circuit ◽  
Sensor Arrays ◽  
Human Robot Interaction ◽  
Organic Polymer ◽  
Load Testing ◽  
Robot Interaction ◽  
Integrated Sensor ◽  
Pressure Sensitive ◽  
Lamination Process ◽  
Skin Pressure

Abstract Pressure sensitive robotic skins have long been investigated for applications to physical human-robot interaction (pHRI). Numerous challenges related to fabrication, sensitivity, density, and reliability remain to be addressed under various environmental and use conditions. In our previous studies, we designed novel strain gauge sensor structures for robotic skin arrays. We coated these star-shaped designs with an organic polymer piezoresistive material, Poly (3, 4-ethylenedioxythiophene)-ploy(styrenesulfonate) or PEDOT: PSS and integrated sensor arrays into elastomer robotic skins. In this paper, we describe a dry etching photolithographic method to create a stable uniform sensor layer of PEDOT:PSS onto star-shaped sensors and a lamination process for creating double-sided robotic skins that can be used with temperature compensation. An integrated circuit and load testing apparatus was designed for testing the resulting robotic skin pressure performance. Experiments were conducted to measure the loading performance of the resulting sensor prototypes and results indicate that over 80% sensor yields are possible with this fabrication process.

LSI-BASED EFFICIENT EMULATION OVERCOMING ALGORITHMIC RESTRICTIONS INHERENT IN QUANTUM COMPUTERS

2003 ◽  
Vol 03 (04) ◽  
pp. C9-C17
Author(s):  
MINORU FUJISHIMA
Keyword(s):  
Periodic Function ◽  
Integrated Circuit ◽  
High Speed ◽  
Large Scale ◽  
Quantum Computer ◽  
Quantum Algorithm ◽  
Quantum Computers ◽  
Np Problems

Quantum computers are believed to perform high-speed calculations, compared with conventional computers. However, the quantum computer solves NP (non-deterministic polynomial) problems at a high speed only when a periodic function can be used in the process of calculation. To overcome the restrictions stemming from the quantum algorithm, we are studying the emulation by a LSI (large scale integrated circuit). In this report, first, it is explained why a periodic function is required for the algorithm of a quantum computer. Then, it is shown that the LSI emulator can solve NP problems at a high speed without using a periodic function.

scholarly journals A High-Speed Fully Digital Phase-Synchronizer Implemented in a Field Programmable Gate Array Device

2017 ◽  
Vol 24 (3) ◽  
pp. 537-550 ◽  
Author(s):  
Robert Frankowski ◽  
Dariusz Chaberski ◽  
Marcin Kowalski ◽  
Marek Zieliński
Keyword(s):  
Integrated Circuit ◽  
High Speed ◽  
Quantum Physics ◽  
Single Photon ◽  
Photon Number ◽  
Simultaneous Recording ◽  
Wide Frequency Range ◽  
Coincidence Detection ◽  
Clock Period ◽  
Digital Phase

AbstractMost systems used in quantum physics experiments require the efficient and simultaneous recording different multi-photon coincidence detection events. In such experiments, the single-photon gated counting systems can be applicable. The main sources of errors in these systems are both instability of the clock source and their imperfect synchronization with the excitation source. Below, we propose a solution for improvement of the metrological parameters of such measuring systems. Thus, we designed a novel integrated circuit dedicated to registration of signals from a photon number resolving detectors including a phase synchronizer module. This paper presents the architecture of a high-resolution (~60 ps) digital phase synchronizer module cooperating with a multi-channel coincidence counter. The main characteristic feature of the presented system is its ability to fast synchronization (requiring only one clock period) with the measuring process. Therefore, it is designed to work with various excitation sources of a very wide frequency range. Implementation of the phase synchronizer module in an FPGA device enabled to reduce the synchronization error value from 2.857 ns to 214.8 ps.

Integrated Optoelectronic Devices on Silicon

2012 ◽  
Vol 1396 ◽  
Author(s):  
Di Liang ◽  
John E. Bowers
Keyword(s):  
Output Power ◽  
Integrated Circuit ◽  
High Speed ◽  
High Performance ◽  
Continuous Wave ◽  
Light Emission ◽  
Extinction Ratio ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Pockels Effect

ABSTRACTSilicon (Si) has been the dominating material platform of microelectronics over half century. Continuous technological advances in circuit design and manufacturing enable complementary metal-oxide semiconductor (CMOS) chips with increasingly high integration complexity to be fabricated in an unprecedently scale and economical manner. Conventional Si-based planar lightwave circuits (PLCs) has benefited from advanced CMOS technology but only demonstrate passive functionalities in most circumstances due to poor light emission efficiency and weak major electro-optic effects (e.g., Pockels effect, the Kerr effect and the Franz–Keldysh effect) in Si. Recently, a new hybrid III-V-on-Si integration platform has been developed, aiming to bridge the gap between Si and III-V direct-bandgap materials for active Si photonic integrated circuit applications. Since then high-performance lasers, amplifiers, photodetectors and modulators, etc. have been demonstrated. Here we review the most recent progress on hybrid Si lasers and high-speed hybrid Si modulators. The former include distributed feedback (DFB) lasers showing over 10 mW output power and up to 85 oC continuous-wave (cw) operation, compact hybrid microring lasers with cw threshold less than 4 mA and over 3 mW output power, and 4-channel hybrid Si AWG lasers with channel space of 360 GHz. Recently fabricated traveling-wave electro-absorption modulators (EAMs) and Mach-Zehnder interferometer modulators (MZM) on this platform support 50 Gb/s and 40 Gb/s data transmission with over 10 dB extinction ratio, respectively.

scholarly journals High-speed programmable photonic circuits in a cryogenically compatible, visible–near-infrared 200 mm CMOS architecture

2021 ◽  
Author(s):  
Mark Dong ◽  
Genevieve Clark ◽  
Andrew J. Leenheer ◽  
Matthew Zimmermann ◽  
Daniel Dominguez ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Power Consumption ◽  
High Speed ◽  
Large Scale ◽  
Near Infrared ◽  
Response Times ◽  
Photonic Integrated Circuits ◽  
Complementary Metal Oxide Semiconductor ◽  
Phase Shifters ◽  
Oxide Semiconductor

AbstractRecent advances in photonic integrated circuits have enabled a new generation of programmable Mach–Zehnder meshes (MZMs) realized by using cascaded Mach–Zehnder interferometers capable of universal linear-optical transformations on N input/output optical modes. MZMs serve critical functions in photonic quantum information processing, quantum-enhanced sensor networks, machine learning and other applications. However, MZM implementations reported to date rely on thermo-optic phase shifters, which limit applications due to slow response times and high power consumption. Here we introduce a large-scale MZM platform made in a 200 mm complementary metal–oxide–semiconductor foundry, which uses aluminium nitride piezo-optomechanical actuators coupled to silicon nitride waveguides, enabling low-loss propagation with phase modulation at greater than 100 MHz in the visible–near-infrared wavelengths. Moreover, the vanishingly low hold-power consumption of the piezo-actuators enables these photonic integrated circuits to operate at cryogenic temperatures, paving the way for a fully integrated device architecture for a range of quantum applications.

scholarly journals Cocaine by-product detection with metal oxide semiconductor sensor arrays

RSC Advances ◽  
2020 ◽  
Vol 10 (47) ◽  
pp. 28464-28477
Author(s):  
Paula Tarttelin Hernández ◽  
Stephen M. V. Hailes ◽  
Ivan P. Parkin
Keyword(s):  
Metal Oxide ◽  
Gas Sensors ◽  
Sensor Array ◽  
Sensor Arrays ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Sensor ◽  
Gas Sensor Array ◽  
Semiconductor Gas Sensors ◽  
Metal Oxide Semiconductor Sensor

Metal oxide semiconductor gas sensors based on SnO2 and Cr2O3 were modified with zeolites H-ZSM-5, Na-A and H–Y to create a gas sensor array to detect cocaine by-product, methyl benzoate. SVMs were later used with a 4 sensor array to classify 9 gases of interest.

Cochlear Implant for Simultaneous Multichannel Stimulation

1987 ◽  
Vol 96 (1_suppl) ◽  
pp. 67-69
Author(s):  
H. McDermott
Keyword(s):  
Cochlear Implant ◽  
Integrated Circuit ◽  
Large Scale ◽  
Electrode Array ◽  
Complementary Metal Oxide Semiconductor ◽  
Preliminary Test ◽  
Oxide Semiconductor ◽  
Bipolar Electrode ◽  
Speech Processor ◽  
Bipolar Mode

A new cochlear implant is described that can stimulate up to three bipolar electrode pairs simultaneously. It uses a scala tympani electrode array comprising 20 separate platinum ring electrodes. The bipolar mode of stimulation is used to minimize the spread of current in the cochlea. Nearly all of the electronics of the device are integrated into a single custom-designed large-scale integrated circuit. A prototype of the chip has been fabricated using an advanced complementary metal oxide semiconductor technology. Preliminary test results indicate that the device functions according to its specifications. The implant, which is still under development, will use a single transcutaneous inductive link to receive both controlling data and electric power from an external speech processor.

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