Monte Carlo simulation-based feasibility study of a dose-area product meter built into a collimator for diagnostic X-ray

2013 ◽  
Vol 162 (3) ◽  
pp. 421-426 ◽  
Author(s):  
Y. Yoon ◽  
H. Kim ◽  
M. Park ◽  
J. Kim ◽  
D. Seo ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Feasibility Study ◽  
X Ray ◽  
Dose Area Product ◽  
Simulation Based ◽  
Area Product

scholarly journals Monte Carlo simulation-based feasibility study of novel indirect flat panel detector system for removing scatter radiation

2016 ◽  
Vol 32 (1) ◽  
pp. 182-187 ◽  
Author(s):  
Yongsu Yoon ◽  
Junji Morishita ◽  
MinSeok Park ◽  
Hyunji Kim ◽  
Kihyun Kim ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Feasibility Study ◽  
Detector System ◽  
Flat Panel ◽  
Scatter Radiation ◽  
Flat Panel Detector ◽  
Simulation Based

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

scholarly journals Voronoi diagram and Monte-Carlo simulation based finite element optimization for cost-effective 3D printing

2021 ◽  
Vol 50 ◽  
pp. 101301
Author(s):  
A.Z. Zheng ◽  
S.J. Bian ◽  
E. Chaudhry ◽  
J. Chang ◽  
H. Haron ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Finite Element ◽  
Monte Carlo ◽  
3D Printing ◽  
Voronoi Diagram ◽  
Cost Effective ◽  
Simulation Based

scholarly journals Monte Carlo Modeling and Design of Photon Energy Attenuation Layers for >10× Quantum Yield Enhancement in Si-Based Hard X-ray Detectors

Instruments ◽  
2021 ◽  
Vol 5 (2) ◽  
pp. 17
Author(s):  
Eldred Lee ◽  
Kaitlin M. Anagnost ◽  
Zhehui Wang ◽  
Michael R. James ◽  
Eric R. Fossum ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Quantum Yield ◽  
Photon Energy ◽  
High Efficiency ◽  
High Energy ◽  
Yield Enhancement ◽  
X Ray ◽  
Simulation Results ◽  
Conversion Efficiencies

High-energy (>20 keV) X-ray photon detection at high quantum yield, high spatial resolution, and short response time has long been an important area of study in physics. Scintillation is a prevalent method but limited in various ways. Directly detecting high-energy X-ray photons has been a challenge to this day, mainly due to low photon-to-photoelectron conversion efficiencies. Commercially available state-of-the-art Si direct detection products such as the Si charge-coupled device (CCD) are inefficient for >10 keV photons. Here, we present Monte Carlo simulation results and analyses to introduce a highly effective yet simple high-energy X-ray detection concept with significantly enhanced photon-to-electron conversion efficiencies composed of two layers: a top high-Z photon energy attenuation layer (PAL) and a bottom Si detector. We use the principle of photon energy down conversion, where high-energy X-ray photon energies are attenuated down to ≤10 keV via inelastic scattering suitable for efficient photoelectric absorption by Si. Our Monte Carlo simulation results demonstrate that a 10–30× increase in quantum yield can be achieved using PbTe PAL on Si, potentially advancing high-resolution, high-efficiency X-ray detection using PAL-enhanced Si CMOS image sensors.

Monte Carlo Simulation of Texture and Microstructure Transformation during Annealing of Steel

2007 ◽  
Vol 129 ◽  
pp. 83-87
Author(s):  
Hua Long Li ◽  
Jong Tae Park ◽  
Jerzy A. Szpunar
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Grain Boundary ◽  
Computer Model ◽  
Graphical Representation ◽  
Structural Characteristics ◽  
Polycrystalline Materials ◽  
Virtual Experiments ◽  
Grain Boundary Character ◽  
Simulation Based

Controlling texture and microstructure evolution during annealing processes is very important for optimizing properties of steels. Theories used to explain annealing processes are complicated and always case dependent. An recently developed Monte Carlo simulation based model offers an effective tool for studying annealing process and can be used to verify the arbitrarily defined theories that govern such processes. The computer model takes Orientation Image Microscope (OIM) measurements as an input. The abundant information contained in OIM measurement allows the computer model to incorporate many structural characteristics of polycrystalline materials such as, texture, grain boundary character, grain shape and size, phase composition, chemical composition, stored elastic energy, and the residual stress. The outputs include various texture functions, grain boundary and grain size statistics that can be verified by experimental results. Graphical representation allows us to perform virtual experiments to monitor each step of the structural transformation. An example of applying this simulation to Si steel is given.

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