scholarly journals Phosphorylated protamines.I. Binding stoichiometry and thermal stability of complexes with DNA

1977 ◽  
Vol 4 (1) ◽  
pp. 149-162 ◽  
Author(s):  
Lothar Willmitzer ◽  
Jürgen Bode ◽  
Karl G. Wagner
Keyword(s):  
Thermal Stability ◽  
Binding Stoichiometry ◽  
Thermal Stability Of Complexes ◽  
Stability Of Complexes ◽  
Thermal Stability Of

Coordination Assemblies of CoII, NiII, ZnII, and CuII with 3,3′,4,4′-Biphenyltetracarboxylic Acid and Three Positional Isomeric Ligands

2013 ◽  
Vol 66 (11) ◽  
pp. 1378 ◽  
Author(s):  
Wei Luo ◽  
Di Yao ◽  
Haiye Li ◽  
Fuping Huang ◽  
Qing Yu ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Coordination Polymers ◽  
Crystallographic Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thermal Stability Of Complexes ◽  
Stability Of Complexes ◽  
Zn Ions ◽  
Thermal Stability Of ◽  
Cu And Zn

Eight different complexes with three positional isomeric dipyridyl ligands (3,3′-Hbpt, 3,4′-Hbpt, and 4,4′-Hbpt) (here, 3,3′-Hbpt = 1H-3,5-bis(3-pyridyl)-1,2,4-triazole, 3,4′-Hbpt = 1H-3-(3-pyridyl)-5-(4-pyridyl)-1,2,4-triazole, and 4,4′-Hbpt = 1H-3,5-bis(4-pyridyl)-1,2,4-triazole), as well as 3,3′,4,4′-biphenyltetracarboxylic acid (H4bptc), namely, {[M(bptc)0.5(3,3′-Hbpt)(H2O)2]·H2O}n (M = Co (1), M = Ni (2)), {[Zn2(bptc)(3,3′-Hbpt)2]·3H2O}n (3), [Co(bptc)0.5(3,4′-Hbpt)(H2O)]n (4), [Ni(bptc)0.5(3,4′-Hbpt)2(H2O)2]n (5), {[Cu(bptc)0.5(3,4′-Hbpt)(H2O)]·H2O}n (6), and {[M(bptc)0.5(4,4′-Hbpt)2(H2O)]·4H2O}n (M = Co (7), and Ni (8)) were synthesised and characterised by single-crystal X-ray diffraction. The crystallographic analysis demonstrates that bptc influences the MII (M = Co, Ni, Cu, and Zn) ions to form 2D layers, which are further connected via the isomeric bpt connectors, leading to many types of coordination polymers, such as 2D layers(for 1–3, 5), 3D four-connected nets with a short Schläfli symbol of (64.82) (for 4, 6), and 3D four-connected nets with a short Schläfli symbol of (64.82)(5.63.72)0.5 (for 7–8). This work demonstrates that the isomeric effects of the bpt ligands influence the construction of these frameworks. The thermal stability of complexes 1–6 was investigated.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Practical criteria for the thermal stability of a unidimensional superconductor

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of
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