scholarly journals 3aA_MI-3High Precision Phase-Shifting Electron Holography of GaN Semiconductor Devices

Microscopy ◽  
2018 ◽  
Vol 67 (suppl_2) ◽  
pp. i26-i26
Author(s):  
Kazuo Yamamoto
Keyword(s):  
Semiconductor Devices ◽  
Phase Shifting ◽  
Electron Holography ◽  
Precision Phase

Evaluation of high-precision phase-shifting electron holography by using hologram simulation

2003 ◽  
Vol 35 (1) ◽  
pp. 60-65 ◽  
Author(s):  
Kazuo Yamamoto ◽  
Tsukasa Hirayama ◽  
Takayoshi Tanji ◽  
Michio Hibino
Keyword(s):  
High Precision ◽  
Phase Shifting ◽  
Electron Holography ◽  
Precision Phase

High precision phase-shifting electron holography

2000 ◽  
Vol 49 (1) ◽  
pp. 31-39 ◽  
Author(s):  
K. Yamamoto ◽  
I. Kawajiri ◽  
T. Tanji ◽  
M. Hibino ◽  
T. Hirayama
Keyword(s):  
High Precision ◽  
Phase Shifting ◽  
Electron Holography ◽  
Precision Phase

Phase-Shifting Electron Holography for Accurate Measurement of Potential Distributions in Organic and Inorganic Semiconductors

Microscopy ◽  
2020 ◽  
Author(s):  
Kazuo Yamamoto ◽  
Satoshi Anada ◽  
Takeshi Sato ◽  
Noriyuki Yoshimoto ◽  
Tsukasa Hirayama
Keyword(s):  
High Performance ◽  
Focused Ion Beam ◽  
Phase Measurement ◽  
Ion Beam ◽  
Functional Materials ◽  
Phase Shifting ◽  
Future Research ◽  
Electron Holography ◽  
Preparation Technique ◽  
Inorganic Semiconductors

Abstract Phase-shifting electron holography (PS-EH) is an interference transmission electron microscopy technique that accurately visualizes potential distributions in functional materials, such as semiconductors. In this paper, we briefly introduce the features of the PS-EH that overcome some of the issues facing the conventional EH based on Fourier transformation. Then, we present a high-precision PS-EH technique with multiple electron biprisms and a sample preparation technique using a cryo-focused-ion-beam, which are important techniques for the accurate phase measurement of semiconductors. We present several applications of PS-EH to demonstrate the potential in organic and inorganic semiconductors and then discuss the differences by comparing them with previous reports on the conventional EH. We show that in situ biasing PS-EH was able to observe not only electric potential distribution but also electric field and charge density at a GaAs p-n junction and clarify how local band structures, depletion layer widths, and space charges changed depending on the biasing conditions. Moreover, the PS-EH clearly visualized the local potential distributions of two-dimensional electron gas (2DEG) layers formed at AlGaN/GaN interfaces with different Al compositions. We also report the results of our PS-EH application for organic electroluminescence (OEL) multilayers and point out the significant potential changes in the layers. The proposed PS-EH enables more precise phase measurement compared to the conventional EH, and our findings introduced in this paper will contribute to the future research and development of high-performance semiconductor materials and devices.

scholarly journals Effects of Fresnel Corrections for Phase-Shifting Electron Holography

2002 ◽  
Vol 8 (S02) ◽  
pp. 24-25
Author(s):  
K. Yamamoto ◽  
T. Hirayama ◽  
T. Tanji ◽  
M. Hibino
Keyword(s):  
Phase Shifting ◽  
Electron Holography

An Ultra-High-Tilt Two-Contact Electrical Biasing Specimen Holder for Electron Holography and Electron Tomography of Semiconductor Devices

2004 ◽  
Vol 10 (S02) ◽  
pp. 1012-1013 ◽  
Author(s):  
Rafal E Dunin-Borkowski ◽  
Alison C Twitchett ◽  
Jonathan S Barnard ◽  
Ronald F Broom ◽  
Paul A Midgley ◽  
...  
Keyword(s):  
Electron Tomography ◽  
Semiconductor Devices ◽  
Electron Holography ◽  
Specimen Holder

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

High-precision phase-shifting interferometry with spherical wavefront reference

2012 ◽  
Vol 52 (1) ◽  
pp. A188 ◽  
Author(s):  
Xianfeng Xu ◽  
Guangcan Lu ◽  
Yanjie Tian ◽  
Guoxia Han ◽  
Hongguang Yuan ◽  
...  
Keyword(s):  
High Precision ◽  
Phase Shifting ◽  
Phase Shifting Interferometry ◽  
Precision Phase ◽  
Spherical Wavefront

Measurement Errors in 632.8 nm High Precision Phase-Shifting Fizeau Interferometer

2010 ◽  
Vol 47 (4) ◽  
pp. 041202
Author(s):  
魏豪明 Wei Haoming ◽  
邢廷文 Xing Tingwen ◽  
李云 Li Yun ◽  
刘志祥 Liu Zhixiang
Keyword(s):  
High Precision ◽  
Measurement Errors ◽  
Phase Shifting ◽  
Fizeau Interferometer ◽  
Precision Phase
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