scholarly journals 3aA_MI-2Stabilization of STEM image with relatively long acquisition time by using stabilized water chiller

Microscopy ◽  
2018 ◽  
Vol 67 (suppl_2) ◽  
pp. i26-i26
Author(s):  
Mitsuru Hamochi ◽  
Toshiya Ishii ◽  
Seiki Chisaka ◽  
Kazushiro Komine ◽  
Hidetaka Sawada ◽  
...  
Keyword(s):  
Acquisition Time ◽  
Stem Image

High energy resolution spectrometer for the dedicated STEM

1984 ◽  
Vol 42 ◽  
pp. 558-559 ◽  
Author(s):  
P.E. Batson
Keyword(s):  
Collection Efficiency ◽  
Core Loss ◽  
Beam Current ◽  
High Energy ◽  
High Energy Resolution ◽  
Acquisition Time ◽  
Good Definition ◽  
Loss Analysis ◽  
Definition Of ◽  
Acceleration Voltage

Use of the STEM to obtain precise electronic information has been hampered by the lack of energy loss analysis capable of a resolution and accuracy comparable to the 0.3eV energy width of the Field Emission Source. Recent work by Park, et. al. and earlier by Crewe, et. al. have promised magnetic sector devices that are capable of about 0.75eV resolution at collection angles (about 15mR) which are great enough to allow efficient use of the STEM probe current. These devices are also capable of 0.3eV resolution at smaller collection angles (4-5mR). The problem that arises, however, lies in the fact that, even with the collection efficiency approaching 1.0, several minutes of collection time are necessary for a good definition of a typical core loss or electronic transition. This is a result of the relatively small total beam current (1-10nA) that is available in the dedicated STEM. During this acquisition time, the STEM acceleration voltage may fluctuate by as much as 0.5-1.0V.

Some Quantification Problems in Parallel EELS Images

1990 ◽  
Vol 48 (2) ◽  
pp. 36-37
Author(s):  
G. Botton ◽  
G. L’Espérance ◽  
M.D. Ball ◽  
C.E. Gallerneault
Keyword(s):  
Electron Microscope ◽  
Imaging System ◽  
Signal To Noise Ratio ◽  
Scanning Transmission Electron Microscope ◽  
Acquisition Time ◽  
Thickness Variation ◽  
Transmission Electron ◽  
Distribution Of Elements ◽  
Scanning Transmission ◽  
Present Distribution

The recently developed parallel electron energy loss spectrometers (PEELS) have led to a significant reduction in spectrum acquisition time making EELS more useful in many applications in material science. Dwell times as short as 50 msec per spectrum with a PEELS coupled to a scanning transmission electron microscope (STEM), can make quantitative EEL images accessible. These images would present distribution of elements with the high spatial resolution inherent to EELS. The aim of this paper is to briefly investigate the effect of acquisition time per pixel on the signal to noise ratio (SNR), the effect of thickness variation and crystallography and finally the energy stability of spectra when acquired in the scanning mode during long periods of time.The configuration of the imaging system is the following: a Gatan PEELS is coupled to a CM30 (TEM/STEM) electron microscope, the control of the spectrometer and microscope is performed through a LINK AN10-85S MCA which is interfaced to a IBM RT 125 (running under AIX) via a DR11W line.

Simulation of high-resolution annular dark field STEM images

1995 ◽  
Vol 53 ◽  
pp. 40-41
Author(s):  
E. J. Kirkland
Keyword(s):  
Electron Beam ◽  
Atomic Layer ◽  
Fresnel Diffraction ◽  
Dark Field ◽  
Objective Lens ◽  
Image Simulation ◽  
Small Probe ◽  
Annular Dark Field ◽  
Stem Image ◽  
Uniform Plane

In a STEM an electron beam is focused into a small probe on the specimen. This probe is raster scanned across the specimen to form an image from the electrons transmitted through the specimen. The objective lens is positioned before the specimen instead of after the specimen as in a CTEM. Because the probe is focused and scanned before the specimen, accurate annular dark field (ADF) STEM image simulation is more difficult than CTEM simulation. Instead of an incident uniform plane wave, ADF-STEM simulation starts with a probe wavefunction focused at a specified position on the specimen. The wavefunction is then propagated through the specimen one atomic layer (or slice) at a time with Fresnel diffraction between slices using the multislice method. After passing through the specimen the wavefunction is diffracted onto the detector. The ADF signal for one position of the probe is formed by integrating all electrons scattered outside of an inner angle large compared with the objective aperture.

Ultra-spatially resolved synchrotron powered FT-IR microspectroscopy of individual cells of biological material

1995 ◽  
Vol 53 ◽  
pp. 884-885
Author(s):  
David L. Wetzel ◽  
John A. Reffner ◽  
Gwyn P. Williams
Keyword(s):  
Thermal Noise ◽  
Spot Size ◽  
Acquisition Time ◽  
Thermal Source ◽  
Signal To Noise ◽  
Spatially Resolved ◽  
Good Spatial Resolution ◽  
Small Spot ◽  
Ft Ir ◽  
Ir Microspectroscopy

Synchrotron radiation is 100 to 1000 times brighter than a thermal source such as a globar. It is not accompanied with thermal noise and it is highly directional and nondivergent. For these reasons, it is well suited for ultra-spatially resolved FT-IR microspectroscopy. In efforts to attain good spatial resolution in FT-IR microspectroscopy with a thermal source, a considerable fraction of the infrared beam focused onto the specimen is lost when projected remote apertures are used to achieve a small spot size. This is the case because of divergence in the beam from that source. Also the brightness is limited and it is necessary to compromise on the signal-to-noise or to expect a long acquisition time from coadding many scans. A synchrotron powered FT-IR Microspectrometer does not suffer from this effect. Since most of the unaperatured beam’s energy makes it through even a 12 × 12 μm aperture, that is a starting place for aperture dimension reduction.

Macroprobe Mode for the Study of Segregation in Steels

1990 ◽  
Vol 48 (2) ◽  
pp. 260-261
Author(s):  
Auclair Gilles ◽  
Benoit Danièle
Keyword(s):  
Mechanical Properties ◽  
Spatial Distribution ◽  
High Performance ◽  
Volume Fraction ◽  
Sheet Steel ◽  
Acquisition Time ◽  
Chemical Information ◽  
X Ray ◽  
Accurate Quantitative Analysis ◽  
Optical Micrographs

During these last 10 years, high performance correction procedures have been developed for classical EPMA, and it is nowadays possible to obtain accurate quantitative analysis even for soft X-ray radiations. It is also possible to perform EPMA by adapting this accurate quantitative procedures to unusual applications such as the measurement of the segregation on wide areas in as-cast and sheet steel products.The main objection for analysis of segregation in steel by means of a line-scan mode is that it requires a very heavy sampling plan to make sure that the most significant points are analyzed. Moreover only local chemical information is obtained whereas mechanical properties are also dependant on the volume fraction and the spatial distribution of highly segregated zones. For these reasons we have chosen to systematically acquire X-ray calibrated mappings which give pictures similar to optical micrographs. Although mapping requires lengthy acquisition time there is a corresponding increase in the information given by image anlysis.

High-angle electron scattering from amorphous silicon

1995 ◽  
Vol 53 ◽  
pp. 162-163
Author(s):  
M. Libera ◽  
J.A. Ott ◽  
K. Siangchaew ◽  
L. Tsung
Keyword(s):  
Electron Scattering ◽  
Amorphous Material ◽  
Structural Defects ◽  
Constant Thickness ◽  
High Angle ◽  
Fast Electrons ◽  
Angle Scattering ◽  
Stem Image ◽  
Amorphous Si ◽  
Thermal Vibrations

Channeling occurs when fast electrons follow atomic strings in a crystal where there is a minimum in the potential energy (1). Channeling has a strong effect on high-angle scattering. Deviations in atomic position along a channel due to structural defects or thermal vibrations increase the probability of scattering (2-5). Since there are no extended channels in an amorphous material the question arises: for a given material with constant thickness, will the high-angle scattering be higher from a crystal or a glass?Figure la shows a HAADF STEM image collected using a Philips CM20 FEG TEM/STEM with inner and outer collection angles of 35mrad and lOOmrad. The specimen (6) was a cross section of singlecrystal Si containing: amorphous Si (region A), defective Si containing many stacking faults (B), two coherent Ge layers (CI; C2), and a contamination layer (D). CBED patterns (fig. lb), PEELS spectra, and HAADF signals (fig. lc) were collected at 106K and 300K along the indicated line.

Comparison of Techniques for EELS Mapping in Biology

1996 ◽  
Vol 54 ◽  
pp. 300-301
Author(s):  
R.D. Leapman ◽  
S.B. Andrews
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Image Data ◽  
Beam Current ◽  
Quantitative Information ◽  
Acquisition Time ◽  
Uniform Thickness ◽  
Electron Dose ◽  
Array Detectors ◽  
Transmission Electron

Elemental mapping of biological specimens by electron energy loss spectroscopy (EELS) can be carried out both in the scanning transmission electron microscope (STEM), and in the energy-filtering transmission electron microscope (EFTEM). Choosing between these two approaches is complicated by the variety of specimens that are encountered (e.g., cells or macromolecules; cryosections, plastic sections or thin films) and by the range of elemental concentrations that occur (from a few percent down to a few parts per million). Our aim here is to consider the strengths of each technique for determining elemental distributions in these different types of specimen.On one hand, it is desirable to collect a parallel EELS spectrum at each point in the specimen using the ‘spectrum-imaging’ technique in the STEM. This minimizes the electron dose and retains as much quantitative information as possible about the inelastic scattering processes in the specimen. On the other hand, collection times in the STEM are often limited by the detector read-out and by available probe current. For example, a 256 x 256 pixel image in the STEM takes at least 30 minutes to acquire with read-out time of 25 ms. The EFTEM is able to collect parallel image data using slow-scan CCD array detectors from as many as 1024 x 1024 pixels with integration times of a few seconds. Furthermore, the EFTEM has an available beam current in the µA range compared with just a few nA in the STEM. Indeed, for some applications this can result in a factor of ~100 shorter acquisition time for the EFTEM relative to the STEM. However, the EFTEM provides much less spectral information, so that the technique of choice ultimately depends on requirements for processing the spectrum at each pixel (viz., isolated edges vs. overlapping edges, uniform thickness vs. non-uniform thickness, molar vs. millimolar concentrations).

Information capacity and bandwidth limitations in the SEM

1989 ◽  
Vol 47 ◽  
pp. 84-85
Author(s):  
D. C. Joy ◽  
R. D. Bunn
Keyword(s):  
Signal To Noise Ratio ◽  
Critical Dimension ◽  
Information Capacity ◽  
Acquisition Time ◽  
Signal To Noise ◽  
Sem Image ◽  
Probe Size ◽  
Minimum Number ◽  
Noise Ratio ◽  
Signal Channel

The information available from an SEM image is limited both by the inherent signal to noise ratio that characterizes the image and as a result of the transformations that it may undergo as it is passed through the amplifying circuits of the instrument. In applications such as Critical Dimension Metrology it is necessary to be able to quantify these limitations in order to be able to assess the likely precision of any measurement made with the microscope.The information capacity of an SEM signal, defined as the minimum number of bits needed to encode the output signal, depends on the signal to noise ratio of the image - which in turn depends on the probe size and source brightness and acquisition time per pixel - and on the efficiency of the specimen in producing the signal that is being observed. A detailed analysis of the secondary electron case shows that the information capacity C (bits/pixel) of the SEM signal channel could be written as :

High-resolution z-contrast imaging of semiconductor interfaces

1989 ◽  
Vol 47 ◽  
pp. 468-469
Author(s):  
S. J. Pennycook
Keyword(s):  
High Resolution ◽  
Phase Contrast ◽  
Contrast Imaging ◽  
Compositional Modulation ◽  
Semiconductor Interfaces ◽  
Complex Figure ◽  
Thin Region ◽  
Stem Image ◽  
Annular Detector ◽  
Z Contrast

Using a high-angle annular detector on a high-resolution STEM it is possible to form incoherent images of a crystal lattice characterized by strong atomic number or Z contrast. Figure 1 shows an epitaxial Ge film on Si(100) grown by oxidation of Ge-implanted Si. The image was obtained using a VG Microscopes' HB501 STEM equipped with an ultrahigh resolution polepiece (Cs ∽1.2 mm, demonstrated probe FWHM intensity ∽0.22 nm). In both crystals the lattice is resolved but that of Ge shows much brighter allowing the interface to be located exactly and interface steps to be resolved (arrowed). The interface was indistinguishable in the phase-contrast STEM image from the same region, and even at higher resolution the location of the interface is complex. Figure 2 shows a thin region of an MBE-grown ultrathin super-lattice (Si8Ge2)100. The expected compositional modulation would show as one bright row of dots from the 2 Ge monolayers separated by 4 rows of lighter Si columns. The image shows clearly that strain-induced interdiffusion has occurred on the monolayer scale.

Spin-polarized Scanning Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 768-769
Author(s):  
Kazuyuki Koike ◽  
Hideo Matsuyama
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
High Speed ◽  
Magnetic Thin Films ◽  
Electron Spin Polarization ◽  
Acquisition Time ◽  
Magnetization Direction ◽  
Spin Polarized ◽  
Conventional Methods ◽  
Scanning Electron

Spin-polarized scanning electron microscopy (spin SEM), where the secondary electron spin polarization is used as the image signal, is a novel technique for magnetic domain observation. Since its first development by Koike and Hayakawa in 1984, several laboratories have extensively studied this technique and have greatly improved its capability for data extraction and its range of applications. This paper reviews the progress over the last few years.Almost all the high expectations initially held for spin SEM have been realized. A spatial resolution of several hundreds angstroms has been attained, which is nearly one order of magnitude higher than that of conventional methods for thick samples. Quantitative analysis of magnetization direction has been performed more easily than with conventional methods. Domain observation of the surface of three-dimensional samples has been confirmed to be possible. One of the drawbacks, a long image acquisition time, has been eased by combining highspeed image-signal processing with high speed scanning, although at the cost of image quality. By using spin SEM, the magnetic structure of a 180 degrees surface Neel wall, magnetic thin films, multilayered films, magnetic discs, etc., have been investigated.

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